Siemens BAS16-03W Datasheet
BAS 16-03W
Semiconductor Group
Mar-13-19981
Silicon Switching Diode
Preliminary data
• For high-speed switching applications
VPS05176
1
2
Type Marking Pin Configuration PackageOrdering Code
Q62702-A1231B 1 = A 2 = CBAS 16-03W SOD-323
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
75 V
Peak reverse voltage
V
RM
85
Forward current
I
F
250 mA
Surge forward current, t = 1 µs
I
FS
4.5 A
Total power dissipation,
T
S
= 111 °C
P
tot
250 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
≤ 235
K/W
Junction - soldering point
R
thJS
≤ 155
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAS 16-03W
Semiconductor Group
Mar-13-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
75 - - V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
Reverse current
V
R
= 70 V
I
R
- - 1 µA
Reverse current
V
R
= 25 V,
T
A
= 150 °C
V
R
= 75 V,
T
A
= 150 °C
I
R
-
-
-
-
30
50
Forward recovery voltage
I
F
= 10 mA,
t
p
= 20 ns
V
fr
- - 1.75 V
AC characteristics
Diode capacitance
V
R
= 0 V, f = 20 MHz
C
D
- - 2 pF
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100 Ω,
measured at
I
R
= 1mA
t
rr
- - 6 ns
Test circuit for reverse recovery time
EHN00017
Ι
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns, D = 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω,
t
r
= 0.35ns,
C ≤ 1pF
Semiconductor Group 2 1998-11-01
Loading...