Siemens BAS16-02W Datasheet
BAS 16-02W
Semiconductor Group
Jul-24-19981
Silicon Switching Diode
Preliminary data
• For high-speed switching applications
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BAS 16-02W 3 Q62702-A1239 1 = A 2 = C SCD-80
Maximum Ratings
Parameter
Symbol UnitValue
Diode reverse voltage
V
R
75 V
Peak reverse voltage
V
RM
85
Forward current
I
F
mA250
I
FS
2.5
Surge forward current, t = 1 µs
A
mW
P
tot
Total power dissipation,
T
S
= 119 °C
100
Junction temperature 150 °C
T
j
T
stg
- 65 ...+150Storage temperature
Semiconductor Group 1 1998-11-01
BAS 16-02W
Semiconductor Group
Jul-24-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter Symbol UnitValues
min. max.typ.
DC characteristics
- VBreakdown voltage
I
(BR)
= 100 µA
75
V
(BR)
-
715
855
1000
1250
mVForward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
-
-
-
-
V
F
-
-
-
1 µA-Reverse current
V
R
= 70 V
-
I
R
30
50
Reverse current
V
R
= 25 V,
T
A
= 150 °C
V
R
= 75 V,
T
A
= 150 °C
I
R
nA
-
-
-
-
- 1.75
V
fr
Forward recovery voltage
I
F
= 10 mA,
t
p
= 20 ns
V-
AC characteristics
2
pF
C
D
-Diode capacitance
V
R
= 0 V, f = 20 MHz
-
ns
t
rr
--Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100 Ω,
measured at
I
R
= 1mA
6
Test circuit for reverse recovery time
EHN00016
Ι
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns, D = 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph: R = 50Ω,
t
r
= 0.35ns,
C ≤ 1pF
Semiconductor Group 2 1998-11-01
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