Siemens BAS125W, BAS125-06W, BAS125-05W, BAS125-04W Datasheet
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W BAS 125-04W BAS 125-06W
BAS 125W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAS 125-04W 14s Q62702- 1 = A1 2 = C2 3=C1/A2 SOT-323
BAS 125-05W 15s Q62702- 1 = A1 2 = A2 3=C1/C2 SOT-323
BAS 125-06W 16s Q62702- 1 = C1 2 = C2 3=A1/A2 SOT-323
BAS 125W 13s Q62702- 1 = A 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Surge forward current (t
Total Power dissipation
T
≤ 25 °C
S
Junction temperature
Storage temperature
≤ 10
ms)
V
R
I
F
I
FSM
P
tot
T
j
T
stg
25 V
100 mA
500
mW
250
150 °C
- 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W 1)
Junction ambient, BAS 125-04W...06W 1)
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
R
R
R
R
thJA
thJA
thJS
thJS
≤
310 K/W
≤
425
≤ 230
≤
265
Semiconductor Group 1 Dec-20-1996
BAS 125W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 20 V
R
V
= 25 V
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 35 mA
F
I
V
R
-
-
F
-
-
-
-
-
385
530
800
150
200
400
650
900
nA
mV
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Differential forward resistance
C
R
T
pF
- - 1.1
F
Ω
I
= 5 mA, f = 10 kHz
F
- 16 -
Semiconductor Group 2 Dec-20-1996
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