Siemens BAS125-07W Datasheet
BAS 125-07W
Semiconductor Group
Jun-04-19981
Silicon Schottky Diode
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BAS 125-07W 17s Q62702-D1347 1 = C1 2 = C2 SOT-3433 = A2 4 = A1
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
25 V
Forward current
I
F
100 mA
Surge forward current (t< 100µs)
I
FSM
500
Total power dissipation,
T
S
= 25 °C
P
tot
250 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
≤ 725 K/W
Junction - soldering point
R
thJS
≤ 565
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 1998-11-01
BAS 125-07W
Semiconductor Group
Jun-04-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 20 V
V
R
= 25 V
I
R
-
-
-
-
150
200
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
V
F
-
-
-
385
530
800
400
650
900
mV
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 1.1 pF
Differential forward resistance
I
F
= 5 mA, f = 10 kHz
r
f
- 16 - Ω
Semiconductor Group 2 1998-11-01
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