Siemens BAS125-07, BAS125-06, BAS125-05, BAS125-04, BAS125 Datasheet

Silicon Schottky Diodes BAS 125 …

● For low-loss, fast-recovery, meter protection,

bias isolation and clamping applications

● Integrated diffused guard ring

● Low forward voltage

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAS 125 Q62702-D131613 SOT-23

BAS 125-04 Q62702-D132114

BAS 125-05 Q62702-D132215

BAS 125-06 Q62702-D132316

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

02.96

BAS 125 …

● For low-loss, fast-recovery, meter protection,

bias isolation and clamping applications

● Integrated diffused guard ring

● Low forward voltage

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAS 125-07 Q62702-D132717

SOT-143

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage V

R 25 V

Forward current IF 100 mA
Surge forward current, t ≤ 10 ms IFSM 500
Total power dissipation, TS ≤ 25 ˚C

3)

Ptot 250 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 55 … + 150

Thermal Resistance

1)

Junction - ambient

2)

Rth JA ≤ 725 K/W

Junction - soldering point Rth JS ≤ 565

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

3)

450 mW per package.

Semiconductor Group 2