Sharp PT550, PT550F Datasheet
PT550/PT550F
PT550/PT550F
TO-18 Type Phototransistor
with Base Terminal
■ Features
1. High sensitivity
PT550 I
(
PT550F IC: MIN.3mA at Ee= 1mW/cm
: MIN.3mA at Ee= 0.1mW/cm
C
2. Narrow acceptance : PT550
(∆θ : TYP. ± 6˚
)
Wide acceptance : PT550F
(∆θ : TYP. ± 50˚
)
3. TO - 18 type standard package
2
(
2
■ Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector-base voltage V
Collector current I
Collector power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
CEO
ECO
CBO
C
C
opr
stg
sol
35 V
6V
35 V
100 mA
150 mW
- 25 to + 125
- 55 to + 150
260 ˚C
■ Outline Dimensions
±
0.1
φ 4.7
MAX.
PT550
6.8
4.5
± 1
20
2.5
1.0
1.0
45˚
(
Ta = 25˚C
˚C
˚C
2
3
φ 2.5 φ 2.5
1
MAX.
φ 5.7
45˚
1 Collector(Case) 2 Base 3 Emitter
)
1.0
1.0
± 0.1
3.6
20
2.5
3
φ 5.7
±
φ4.7
± 0.1
φ 3.0
PT550F
MAX.
(
Unit : mm
0.1
φ 0.45φ 0.45
2
1
)
1
2
3
-6
10
1.0
-
-
-
(
Ta = 25˚C
■ Electro-optical Characteristics
Parameter Symbol
*2
Collector current I
Collector dark current I
Collecter-emitter saturation
voltage
V
Peak sensitivity wavelength λ
Response
time
*2 Ee: Irradiance by CIE standard light source A (tungsten lamp
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
Rise time t
Fall time t
VCE=5V VCE=5V
C
E
= 0.1mW/cm2Ee= 1mW/cm
e
VCE= 10V, E
CEO
I
= 1mA, IB=0
C
)
CE(sat
E
= 0.1mW/cm2Ee= 1mW/cm
e
P
r
V
CC
f
Conditions
PT550 PT550F
= 0, I
=0
e
B
I
= 1mA, I
C
-
=15V, IC= 1mA, RL=1kΩ
)
MIN. TYP. MAX. Unit
320 mA
2
-10
=0
B
-- V
2
-
PT550 142
PT550F 150
-7
800 nm
- 350 µs
- 300 µs
)
A
PT550/PT550F
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
175
)
150
mW
(
C
125
100
75
50
Collector power dissipation P
25
0
-
25 0 25 50 75 100 125
Ambient temperature Ta (˚C
)
Fig. 3 Relative Collector Current vs.
Ambient Temperature (PT550
350
300
)
%
(
250
200
150
100
Relative collector current
50
0
-
25 0 25 50 75 100 125
Ambient temperature T
)
(˚C
a
Fig.4-b Collector Current vs.
Irradiance
5
=5V
V
CE
T
= 25˚C
a
2
)
1
10
mA
(
C
5
(PT550F
2
0
10
Collector current I
5
2
-1
10
-1
25 2
10
510
Irradiance E
(mW/cm
e
)
-0
2
)
Fig. 2 Collector Dark Current vs.
Ambient Temperature
-4
10
V
= 10V
5
CE
-5
10
)
5
A
(
-6
10
5
CEO
-7
10
5
-8
10
5
-9
10
5
Collector dark current I
-10
10
5
-11
10
5
-
25 0 25 50 75 100
Ambient temperature T
a
(˚C
Fig.4-a Collector Current vs.
Irradiance
5
VCE=5V
T
= 25˚C
a
2
)
1
10
mA
(
C
5
2
0
10
Collector current I
5
2
-1
10
-2
10
5252
Irradiance E
10
(mW/cm
e
Fig.5-a Collector Current vs.
Collector-emitter Voltage
20
E
= 0.1mW/cm
10
)
5
mA
(
C
2
1
0.5
Collector current I
0.2
0.1
0.05
0 5 10 15
Collector-emitter voltage V
e
)
)
-1
2
)
(
PT550
T
= 25˚C
a
0.05mW/cm
0.02mW/cm
0.01mW/cm
CE
(V
)
2
2
2
2
)
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