Sharp PT501, PT510 Datasheet
PT501/PT510
PT501/PT510
TO-18 Type Narrow
Acceptance Phototransistor
■ Features
1. Narrow acceptance (∆θ : TYP. ± 6˚
2. TO -18 type standard package
3. With base terminal : PT510
)
■ Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
■ Absolute Maximum Ratings
Parameter Symbol PT501 PT510 Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector-base voltage V
Emitter-base voltage V
Collector power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
CEO
ECO
CBO
EBO
C
opr
stg
sol
45 35 V
66V
-35V
-6V
75 75 mW
- 25 to + 125 - 25 to +125
- 55 to + 150 - 55 to +150
260 260 ˚C
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector current I
Collector dark current I
*2
Collector-emitter saturation voltage
V
Peak sensitivity wavelength λ
Response
time
*2 Ee: Irradiance by CIE standard light source A (tungsten lamp
Rise time t
Fall time t
VCE= 5V, Ee= 10mW/cm
C
CEOVCE
CE(sat
P
r
f
= 30V, Ee=0 - 2x10
)
I
= 1mA, E
C
VCE= 2V, IC= 2mA,
RL= 100Ω(PT501:1kΩ
)
= 10mW/cm
e
■ Outline Dimensions
±
0.1
φ 4.7
Glass
lens
MAX.
PT501
4.5
6.8
13
φ 0.45
2.5
1.0
1
2
1.0
45˚
MAX.
φ5.7
1
2
(
Ta = 25˚C
2
2
2.5
- 0.2 - V
- 800 - nm
-
)
-
1 Collector
2 Emitter
˚C
˚C
PT501 10
PT510 20
PT501 10
PT510 2
PT501 10
PT510 3
45˚
)
1.0
MAX.
6.8
1.0
-9
1.0
±
φ 4.7
4.5
20.0
2.5
3
2
PT510
φ5.7
(
Unit : mm
±
0.1
Glass
lens
φ 0.45
2
φ 2.5
1
MAX.
1
1 Collector(Case
2 Base
3
3 Emitter
(
Ta = 25˚C
-mA
-7
10
- µs
- µs
)
)
)
A
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PT501/PT510
*2 Classification Table of Collector Current(I
Model No. I
PT501A 20 to 80
PT501B 10 to 25
PT501C 2.5 to 15
at VCE= 5V, Ee= 10mW/cm2, Ta= 25˚C
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
100
)
80
mW
(
75
C
60
40
20
Collector power dissipation P
0
-
25 0 25 50 75 100 125
Ambient temperature Ta (˚C
C
(mA)
)
)
C
Fig. 2 Collector Dark Current vs.
Ambient Temperature
-4
10
=30V
V
CE
-5
)
10
A
(
-6
10
CEO
-7
10
-8
10
-9
10
Collector dark current I
-10
10
-11
10
-
25 0 25 50 75 100 125
Ambient temperature T
)
(˚C
a
Fig. 3 Relative Collector Current vs.
Ambient Temperature
160
VCE=5V
140
E
)
%
(
Relative collector current
= 10mW/cm
e
120
100
80
60
40
20
0
0
10 20 30 40 7050 60
2
Ambient temperature Ta (˚C
)
Fig.4-a Collector Current vs. Irradiance
(
20
V
=5V
CE
T
= 25˚C
a
)
15
mA
(
C
10
Collector current I
5
0
0246810
Irradiance E
(mW/cm
e
2
)
PT501
)
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