Sharp PT491, PT491F, PT493, PT493F Datasheet

PT491/PT491F/PT493/PT493F
PT491/PT491F PT493/PT493F
Features
1. Epoxy resin package
2. Compact
3. Intermediate acceptance (∆θ : TYP. ± 40˚
4. Long lead pin type : PT493/PT493F
5. Visible light cut-off type : PT491F/
Applications
2. Optoelectronic switches
PT493F
Intermediate Acceptance High Sensitivity Phototransistor
Epoxy
resin
(
Unit : mm
0.8
2- 0.45
2- 0.8
1 Emitter 2 Collector
Outline Dimensions
PT491/PT491F
MAX
: 0.3
MAX
: 0.8
1
±
0.2
3.0
1.7
2.54
2.8
PT491 PT491F
1.5
0.2
±
4.0
φ 2.5
1.0
±
17.5
MIN.
0.5
2
0.2
±
2.8
Epoxy resin
Transparent light blue resin Visible light cut-off resin (black
1.15
0.75
2- 0.4
)
)
2C - 0.5
Rest of gateBurry's dimensions
)
1.4
2
1
5
PT493/PT493F
MAX
: 0.3
MAX
: 0.8
±
0.2
3.0
1.5
0.2
±
4.0
φ 2.5
1.7
1.0
3.0 18.5
±
40.0
MIN.
2.54
1
2.8
PT493 PT493F
0.5
2
0.2
±
2.8
Epoxy resin
Transparent light blue resin Visible light cut-off resin (black
1.15
0.75
Epoxy
resin
0.8
2-0.4
)
2- 0.45
2- 0.8
1 Emitter 2 Collector
Absolute Maximum Ratings
Parameter Symbol Rating Unit Collector-emitter voltage V Emitter-collector voltage V Collector current I Collector power dissipation Operating temperature T Storage temperature T
*1
Soldering temperature T
*1 For 3 seconds at the position of 1.4mm from the
CEO
ECO
C
P
C
- 25 to + 85
opr
- 40 to + 85
stg
sol
(
Ta = 25˚C
)
35 V
6V 50 mA 75 mW
˚C ˚C
260 ˚C
2C - 0.5
Rest of gate
Burr's dimensions
surface of resin edge
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
1.4
2
1
PT491/PT491F/PT493/PT493F
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector current
PT491/PT493 PT491F/PT493F E
Collector dark current I
*2
Collector-emitter saturation voltage V Peak sensitivity PT491/PT493
wavelength PT491F/PT493F Response time
Rise time Fall time
Half intensity angle
*2 Ee, EV: Illuminance, irradiance by CIE standard light source A (tungsten lamp
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
)
70
mW
(
60
C
50
40
30
20
Collector power dissipation P
10
0
-
25
250 50 10075 85
Ambient temperature T
a
(˚C
)
VCE= 2V 0.3 0.6 1.3 mA
I
C
= 2lx
V
CEOVCE
CE(sat
λ
p
t
r
t
f
= 10V, Ee=0 - - 10
IC= 0.8mA,
)
E
= 1mW/cm
e
VCE= 2V, IC= 5mA RL= 100
∆θ -
0.2 0.4 0.8 mA
2
-
-
)
- - 1.0 V
-
800 - nm
- 860 - nm 80
- µs 70
±40 -
Fig. 2 Collector Dark Current vs.
Ambient Temperature
-4
10
5
V
CE
= 10V
-5
10
)
A
5
(
-6
10
CEO
5
-7
10
5
-8
10
5
-9
10
5
Collector dark current I
-10
10
5
-11
10
5
-
25 0 25 50 75 100
Ambient temperature Ta (˚C
(
Ta = 25˚C
-6
400 350
)
)
A
˚
Fig. 3 Relative Collector Current vs.
Ambient Temperature
175
V
=2V
CE
) %
(
Relative collector current
EV= 21x
150
125
100
75
50
-
25 500 25 75 100
Ambient temperature T
a
(˚C
)
Fig. 4 Collector Current vs. Irradiance
50
V
=2V
CE
T
= 25˚C
a
)
20
mA
(
C
10
5
Collector current I
2
1
25 25
PT491 PT493
10
Irradiance E
-1
(mW/cm
e
PT491F PT493F
2
)
1
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