PT491/PT491F/PT493/PT493F
PT491/PT491F
PT493/PT493F
■ Features
1. Epoxy resin package
2. Compact
3. Intermediate acceptance (∆θ : TYP. ± 40˚
4. Long lead pin type : PT493/PT493F
5. Visible light cut-off type : PT491F/
■ Applications
1. VCRs
2. Optoelectronic switches
PT493F
Intermediate Acceptance High
Sensitivity Phototransistor
❈ Epoxy
resin
(
Unit : mm
0.8
2- 0.45
2- 0.8
1 Emitter
2 Collector
■ Outline Dimensions
PT491/PT491F
MAX
: 0.3
MAX
: 0.8
1
±
0.2
3.0
1.7
2.54
2.8
PT491
PT491F
1.5
0.2
±
4.0
φ 2.5
1.0
±
17.5
MIN.
0.5
2
0.2
±
2.8
❈ Epoxy resin
Transparent light blue
resin
Visible light cut-off
resin (black
1.15
0.75
2- 0.4
)
)
2C - 0.5
Rest of gateBurry's dimensions
)
1.4
2
1
5
PT493/PT493F
MAX
: 0.3
MAX
: 0.8
±
0.2
3.0
1.5
0.2
±
4.0
φ 2.5
1.7
1.0
3.0 18.5
±
40.0
MIN.
2.54
1
2.8
PT493
PT493F
0.5
2
0.2
±
2.8
❈ Epoxy resin
Transparent light blue
resin
Visible light cut-off
resin (black
1.15
0.75
❈ Epoxy
resin
0.8
2-0.4
)
2- 0.45
2- 0.8
1 Emitter
2 Collector
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
Collector power dissipation
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For 3 seconds at the position of 1.4mm from the
CEO
ECO
C
P
C
- 25 to + 85
opr
- 40 to + 85
stg
sol
(
Ta = 25˚C
)
35 V
6V
50 mA
75 mW
˚C
˚C
260 ˚C
2C - 0.5
Rest of gate
Burr's dimensions
surface of resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
1.4
2
1
PT491/PT491F/PT493/PT493F
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector current
PT491/PT493
PT491F/PT493F E
Collector dark current I
*2
Collector-emitter saturation voltage V
Peak sensitivity PT491/PT493
wavelength PT491F/PT493F
Response time
Rise time
Fall time
Half intensity angle
*2 Ee, EV: Illuminance, irradiance by CIE standard light source A (tungsten lamp
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
)
70
mW
(
60
C
50
40
30
20
Collector power dissipation P
10
0
-
25
250 50 10075 85
Ambient temperature T
a
(˚C
)
VCE= 2V 0.3 0.6 1.3 mA
I
C
= 2lx
V
CEOVCE
CE(sat
λ
p
t
r
t
f
= 10V, Ee=0 - - 10
IC= 0.8mA,
)
E
= 1mW/cm
e
VCE= 2V, IC= 5mA
RL= 100Ω
∆θ -
0.2 0.4 0.8 mA
2
-
-
)
- - 1.0 V
-
800 - nm
- 860 - nm
80
- µs
70
±40 -
Fig. 2 Collector Dark Current vs.
Ambient Temperature
-4
10
5
V
CE
= 10V
-5
10
)
A
5
(
-6
10
CEO
5
-7
10
5
-8
10
5
-9
10
5
Collector dark current I
-10
10
5
-11
10
5
-
25 0 25 50 75 100
Ambient temperature Ta (˚C
(
Ta = 25˚C
-6
400
350
)
)
A
˚
Fig. 3 Relative Collector Current vs.
Ambient Temperature
175
V
=2V
CE
)
%
(
Relative collector current
EV= 21x
150
125
100
75
50
-
25 500 25 75 100
Ambient temperature T
a
(˚C
)
Fig. 4 Collector Current vs. Irradiance
50
V
=2V
CE
T
= 25˚C
a
)
20
mA
(
C
10
5
Collector current I
2
1
25 25
PT491
PT493
10
Irradiance E
-1
(mW/cm
e
PT491F
PT493F
2
)
1