Sharp PT481, PT481F, PT483F1 Datasheet
PT481/PT481F/
PT483F1
■ Features
1. Epoxy resin package
2. Narrow acceptance (∆θ : Typ. ± 13˚
3. High sensitivity
(I
: MIN. 1.5mA at Ee= 0.1mW/cm
C
(I
: MIN. 0.9mA at Ee= 0.1mW/cm
C
4. Visible light cut-off type :
PT481F/PT483F1
5. Long lead pin type : PT483F1
■ Applications
1. VCRs, cassette tape recorders
2. Floppy disk drives
3. Optoelectronic switches
4. Automatic stroboscopes
)
2
)
:
PT481/PT483F1
2
)
:
PT481F
PT481/PT481F/PT483F1
Narrow Acceptance High
Sensitivity Phototransistor
■ Outline Dimensions
PT481/PT481F
2- C0.5
MAX.
0.3
gate
Rest of
±
0.1
R0.8
Mark
(
)
black
PT481F
0.2
±
2.15
0.2
±
2.95
1
PT481 Light blue transparent resin
PT481F Visible light cut-off resin (black
PT483F1
2 - C0.5
MAX.
0.3
gate
Rest of
±
0.1
R0.8
Mark
(
)
black
2-0.6
3.0
1.7
2.54
2.8
3.0
1.7
Detector center
1.5
4.0
MAX.
0.8
1.0
-
+1.5
17.5
MIN.
2- 0.4
0.5
1.6
2
❈ Epoxy resin
Detector center
1.5
4.0
MAX.
18.5
0.8
40.0
3.0
1.15
0.75
60˚
1 Emitter
2 Collector
1.15
0.75
60˚
(
R0.5
0.15
MAX.
0.8
2 - 0.45
2 - 0.8
)
R0.5
0.15
MAX.
0.8
Unit : mm
Epoxy
❈
resin
1.4
2
1
Epoxy
❈
resin
1.4
)
■ Absolute Maximum Ratings(Ta =25˚C
Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
Collector power dissipation
Operating temperature T
Storage temperature T
*1
Soldering temperature T
CEO
ECO
C
P
C
opr
stg
sol
*1 For 3 seconds at the position of 1.4mm from the
bottom face of resin package
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
35 V
6V
50 mA
75 mW
- 25 to +85
- 40 to +85
260 ˚C
)
0.2
±
2.95
1
0.2
±
2.15
˚C
˚C
MIN.
2.54
2.8
❈ Visible light cut-off resin (black
1.6
2
0.5
2- 0.4
1 Emitter
2 Collector
2 - 0.45
2 - 0.8
2
1
)
PT481/PT481F/PT483F1
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector
current
Collector dark current I
*2
Collector-emitter saturation voltage V
Peak emission PT481
wavelength PT481F/PT483F1
Response time
*2 Ee: Irradiance by CIE standard light source A (tungsten lamp
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
)
70
mW
(
C
60
50
40
30
20
Collector power dissipation P
10
0
-
25
PT481
PT481F 0.9 - 27 mA
I
C
PT483F1 1.5
CEOVCE
CE(sat
λ
p
Rise time
Fall time
250 50 10075 85
Ambient temperature T
(˚C)
a
t
r
t
f
(
Ta = 25˚C
VCE=2V
= 0.1mW/cm
E
e
2
= 10V, Ee=0 - - 10
= 2.5mA
I
c
)
E
= 1mW/cm
e
2
-
1.5 10 25 mA
-
4.0 mA
-6
A
- 0.7 1.0 V
- 800 - nm
-
860 - nm
VCE= 2V, IC= 10mA - 80 - µs
RL= 100Ω -70-µs
)
Fig. 2 Collector Dark Current vs.
Ambient Temperature
-4
10
V
5
CE
= 10V
-5
10
)
A
5
(
-6
10
CEO
5
-7
10
5
-8
10
5
-9
10
5
Collector dark current I
-10
10
5
-11
10
5
-
25 0 25 50 75 100
Ambient temperature T
(˚C)
a
)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
175
V
=2V
CE
E
= 0.1mW/cm
e
)
150
%
(
125
100
Relative collector current
75
50
-
25 0 25 50 75 100
2
Ambient temperature Ta (˚C
)
Fig.4-a Collector Current vs. Irradiance
(
2
)
PT481
50
VCE=2V
= 25˚C
T
a
)
20
mA
(
C
10
5
Collector current I
2
1
25 25
-1
10
Irradiance Ee (mW/cm
)
1
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