Sharp PT4800, PT4800F, PT4810, PT4810F, PT4850F Datasheet

PT4800/PT4800F/PT4810/PT4810F/PT4850F

PT4800/PT4800F/PT4810
PT4810F/PT4850F

■ Features

1. Thin type package (Thickness : 1.5mm

2. Visible light cut-off type :

PT4800F/PT4810F/PT4850F

3. Single phototransistor output :

PT4800/PT4800F/PT4850F

Darlington phototransistor output:

PT4810/PT4810F

4. Thin type

■ Applications

1. VCRs

2. Floppy disk drives

)

Thin Type Phototransistor

■ Outline Dimensions

0.8

)

)

1

PT4800
PT4810
F type

3.0

1.6

1.0

1.7

0.8

1.8

MIN.

0.5

2.54

2

Transparent resin
Transparent blue resin
Visible light cut-off resin (black

MAX

2 - C0.5

: 0.3

Rest of gate

φ 0.8
2 - 0.45

MAX

2 - 0.9

: 0.3

Burry's dimensions

PT4810F

Mark(blue

PT4850F

Mark(black

3.5

0.5

±

17.5

❈ Epoxy resin

(

1.5

0.8

❈ Epoxy resin

0.7

2 - 0.25

1 Emitter
2 Collector

Unit : mm

PT4800/F
PT4850F

2

1

PT4810/F

2

1

)

)

■ Absolute Maximum Ratings

(

Ta =25˚C

)

Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V

Collector current

PT4800/PT4800F/PT4850F
PT4810/PT4810F 50

Collector power dissipation P
Operating temperature T
Storage temperature T

*1

Soldering temperature T

*1 For 3 seconds at the position of 1.8mm from the bottom face of resin package

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”

I

CEO

ECO

C

C

opr

stg

sol

35 V

6V

20

mA

75 mW

- 25 to +85

- 40 to +85

˚C
˚C

260 ˚C

PT4800/PT4800F/PT4810/PT4810F/PT4850F

■ Electro-optical Characteristics

Parameter Symbol Conditions MIN. TYP. MAX. Unit

*2

Collector current

Collector dark current

PT4800
PT4800F 0.08 0.25 0.75 mA
PT4850F 0.12 - 0.56 mA
PT4810 E
PT4810F 0.27 - 6.0 mAV
PT4800/PT4800F

PT4850F

Ee= 1mW/cm
VCE=5V

I

C

= 0.1mW/cm

e

=2V

CE

Ee= 0, VCE= 20V - - 0.1 m A

I

CEO

PT4810/PT4810F Ee= 0, VCE= 10V - - 1.0 m A

=10mW/cm

V

(

sat

CE

)

CEO

ECO

E

e

=0.5mA

C

= 1mW/cm

E

e

I

= 2.5mA

C

IC= 0.1mA
E

=0

e

IE= 0.01mA
E

=0

e

*2

Collector-emitter saturation
voltage

PT4800/PT4800F
PT4850F I

PT4810/PT4810F

Collector-emitter breakdown voltage BV

Emitter-collector breakdown voltage BV

PT4800

Peak sensitivity
wavelength

PT4800F - 860 - nm
PT4850F -

λ p

PT4810 - 800 - nm
PT4810F - 860 - nm

Response
time

PT4800/PT4800F
PT4850F

Rise time

PT4810/PT4810F

PT4800/PT4800F
PT4850F

Fall time

PT4810/PT4810F

VCE= 2V, IC= 2mA
R

=100Ω

L

t

r

V

CE

=10mA

I

C

R

L

=2V

=100Ω

VCE= 2V, IC= 2mA
R

= 100Ω

L

t

f

V

CE

= 10mA

I

C

R

L

=2V

=100Ω

Half intensity angle ∆θ -

*2 Ee : Irradiance by CIE standard light source A (tungsten lamp

)

Fig. 1 Collector Power Dissipation vs.

Ambient Temperature

)

100

mW

(

C

80

60

40

20

Collector power dissipation P

0

-

25 0 25 50 75 100

Ambient temperature Ta (˚C

85 0 25 50 75 100

)

2

2

2

2

-

-

Fig. 2-a Collector Dark Current vs.

Ambient Temperature

10

)
A

(

10

CEO

10

10

Collector dark current I

10

-6

5

2

-7

5

2

-8

5

2

-9

5

2

-10

(

PT4800/PT4800F/PT4850F

VCE= 20V

Ambient temperature T

(

Ta = 25˚C

)

0.12 0.4 1.0 mA

0.45 - 7.0 mA

- - 0.4 V

- - 1.0 V

35 - - V

6--V

- 800 - nm

860 - nm

- 3.0 - µ s

- 80 400 µs

- 3.5 - µs

- 70 350 µs

±35 -

˚

)

)

(˚C

a