Sharp PT480, PT480F Datasheet
PT480/PT480F
PT480/PT480F
Narrow Acceptance
Phototransistor
■ Features
1. Epoxy resin package
2. Narrow acceptance (∆θ : TYP. ± 13˚
)
3. Visible light cut-off type : PT480F
■ Applications
1. VCRs, cassette tape recorders
2. Floppy disk drives
3. Optoelectronic switches
4. Automatic stroboscopes
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For 5 seconds at the position of 1.4mm from the bottom face of resin package
CEO
ECO
C
C
opr
stg
sol
35 V
6V
20 mA
75 mW
- 25 to + 85
- 40 to + 85
260 ˚C
■ Outline Dimensions
Detector center
2 - C0.5
gate
Rest of
±
R0.8
PT480 Transparent resin
PT480F
(
Ta =25˚C
0.1
˚C
˚C
MAX.
0.2
±
2.95
0.3
0.2
±
2.15
3.0
1.5
1.7
MAX.
0.8
+1.5
MIN.
2.54
1.6
2.8
21
❈ Epoxy resin
Visible light cut-off
resin (black
)
1.0
-
17.5
0.5
4.0
2- 0.4
1 Emitter
2 Collector
)
1.15
0.75
60˚
0.15
R0.5
MAX.
0.8
2 - 0.45
2 - 0.8
(
Unit : mm
❈ Epoxy resin
1.4
2
1
)
■ Electro-optical Characteristics
(
Ta = 25˚C
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector PT480
PT480Fcurrent E
Collector dark crrrent I
*2
Collector-emitter saturation
voltage
V
Peak sensitivity PT480
wavelength PT480F
Response time
*2 Ee : Irradiance by CIE standard light source A (tungsten lamp
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
Rise time
Fall time
VCE= 5V 0.4 1.7 6.0 mA
I
C
= 1mW/cm
e
CEOVCE
CE(sat
λ
P
t
r
t
f
= 20V, Ee=0 - 10-910
)
IC= 0.5mA, Ee=10mW/cm
VCE= 2V, IC= 2mA - 3 - µs
RL= 100Ω - 3.5 - µs
)
2
-
0.25 0.8 3.0 mA
2
- 0.1 0.4 V
- 800 -
-
860 - nm
-7
)
A
nm
PT480/PT480F
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
)
70
mW
(
C
60
50
40
30
20
Collector power dissipation P
10
0
-
25
250 50 10075 85 0 25 50 75 100
Ambient temperature Ta (˚C
)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
160
VCE=5V
140
)
E
= 1mW/cm
e
%
(
120
2
100
80
60
Relative collector current
40
20
0
0 10203040506070
Ambient temperature T
(˚C)
a
Fig.4-b Collector Current vs. Irradiance
(
10
V
=5V
CE
T
= 25˚C
a
5
)
mA
2
(
C
1
0.5
Collector current I
0.2
0.1
0.05
Irradiance Ee (mW/cm
PT480F
50.20.1 0.5 212010
2
)
Fig. 2 Collector Dark Current vs.
Ambient Temperature
-6
10
VCE= 20V
5
)
2
A
(
-7
10
CEO
5
2
-8
10
5
2
-9
10
Collector dark current I
5
2
-10
10
)
Ambient temperature T
a
(˚C
Fig.4-a Collector Current vs. Irradiance
(PT480
)
(
mA
C
20
V
=5V
CE
= 25˚C
T
a
10
5
2
1
0.5
Collector current I
0.2
0.1
0.1 0.2 0.5 2 5 20
110
Irradiance Ee (mW/cm
2
)
)
Fig.5-a Collector Current vs.
)
Collector-emitter Voltage
2.0
Ta= 25˚C
)
(
mA
C
1.8
1.6
1.4
1.2
= 1.0mW/cm
e
E
1.0
0.8
0.6
Collector current I
0.4
0.2
0
0 5 10 15 20 25 30 35 40
Collector-emitter voltage V
2
0.75mW/cm
0.5mW/cm
0.25mW/cm
0.1mW/cm
2
2
2
2
CE
(PT480
)
(V
)
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