Sharp PT4120 Datasheet

PT4120

Side View and Thin Flat Type

PT4120

■■

Features

1. 2-phase PT output type
(Read pitch : 0.94 mm)

2. Compact, thin and flat package

Applications

■

1. Mouses

2. Track balls

3. Encoders

2-Phase Output Phototransistor

Outline Dimensions

2-C0.5

0.8

MAX.

+ 0.3

-

0.1

12 3

3.0

(1.7)

(2.54)

MAX.

Gate burr

0.3

MAX.

Rugged resin

0.8

Rugged resin 0.2

3-0.45

PT B
PT A

1.4

3.9

16.5±1.0

+ 1.5

1.5

1.0

-

18.0

56˚

4.0

2.0

1.8

0.7

4˚

4˚

1.0

±

5.0

0.7

MAX.0.1

4˚

0.15

3-0.4

(1.5)

(Unit : mm)

Transparent
epoxy resin

4˚

+0.3

-

0.1

Absolute Maximum Ratings

■

Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Operating temperature T
Storage temperature T

*1

Soldering temperature

*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge

CEO

ECO

C

C

opr

stg

T

sol

(Ta = 25˚C)

35 V

6V
20 mA
75 mW

-25to +85

-40to +85

˚C
˚C

260 ˚C

6˚ 6˚

2.8

* Tolerance : ± 0.2 mm

1

2

Shape of detector portion

6˚6˚

1 Emitter (PT A)
2 Collector (common)

3

3 Emitter (PT B)

0.17

0.81

Soldering area

0.470.47

0.94

1.4mm

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

Electro-optical Characteristics

■

(Ta= 25˚C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

*2

Collector current I
Dark current I
Collector-emitter saturation voltage V

Collector-emitter breakdown voltage BV

Emitter-collector breakdown voltage BV

C

CEO

CE(sat)

CEO

ECO

EV= 1 000 lx
V

=5V

CE

*2

Ee= 0,VCE= 20V

*2

EV=1 000 lx
I

=0.1mA

C

IC= 0.1mA

*2

E

=0

e

IE=0.01mA

*2

E

=0

e

0.45 - 1.8 mA

- - 0.1 µA

- 0.1 0.4 V

35 - - V

6--V

Peak sensitivity wavelength λp - 800 - nm

Response time

2-element I variation

*2 E , E : Illuminance, irradiance by CIE standard light source A (tungsten lamp)

ve

*3 Terminals other than test terminal shall be released.

C

Rise Time t
Fall Time t

RI

r

f

VCE=2V,IC=2mA - 3.0 - µ s

- 3.5 - µ sRL=100Ω

C(a)/IC(b)

0.7 - 1.3 -

PT4120

Fig. 1 Collector Power Dissipation vs.

Ambient Temperature

80

70

(mW)

60

C

50

40

30

20

10

Collector power dissipation P

0

-

25 0 25 50 75 100

Ambient temperature Ta ( ˚C) Ambient temperature Ta ( ˚C)

Fig. 2 Dark Current vs. Ambient Temperature

-6

10

VCE=20V

5

2

-7

10

5

(A)

CEO

2

-8

10

5

2

-9

Dark current I

10

5

2

-10

10

85

0 255075100