Sharp PT4110, PT4110F Datasheet

PT4110/PT4110F
PT4110/PT4110F
■■
Features
1. Compact and thin flat package
2. Wide beam angle (Half intensity angle : ± 70˚ )
3. Visible light cut-off type available ( PT4110F)
Applications
1. Optoelectronic switches
2. Encoders
Phototransistors
Outline Dimensions
2 - C0.5
MAX. 0.3
Gate burr
MAX. 0.9
Rugged resin
Rugged resin
MAX. 0.2 2- 0.45
0.3
+
-
0.1
6˚ 6˚
Detector
3.0
center
(1.7)
12
(2.54)
6˚6˚
2.8
1.5
1.4
MIN. 0.5
1.8
0.7
0.7
4˚
4.0 4˚
1.0
-
+1.5
17.5
Model
PT4110 PT4110F
* Tolerance : ±0.2 mm * ( ) : Reference dimensions
Epoxy resin
4˚
MAX. 0.1
4˚
0.15
1
+0.3
2- 0.4
-
0.1
1 Emitter 2 Collector
Resin type Pale blue transparent epoxy resin Black visible light cut-off epoxy resin
(Unit : mm)
2
Absolute Maximum Ratings
(Ta= 25˚C)
Parameter Symbol Rating Unit Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature T Storage temperature T
*1
Soldering temperature T
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
V
CEO
V
ECO
I
C
P
C
opr
stg
sol
35
6 50 75
-25to +85
-40to +85 260 ˚C
V V
mA
mW
˚C ˚C
1.4mm
Soldering area
Electro-optical Characteristics
Parameter Symbol Conditions
Collector current
Dark current
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity wavelength
Response time
PT4110 PT4110F 2.5 - 19
V
I
I
CEO
CE(sat)
BV
BV
PT4110 PT4110F - 860 -
λ
Rise Time
*2
E
=1mW/cm
C
e
VCE=5V
= 0, VCE=10V
E
e
*2
Ee=1mW/cm IC=2.5mA I
=0.1mA
CEO
ECO
p
t
r
t
f
C
*2
E
=0
e
I
= 0.01mA
E
*2
=0
E
e
VCE= 2V, IC= 10mA RL= 100
Half intensity angle ∆θ 70- ˚-
*2 Ee : Irradiance by CIE standard light source A (tungsten)
PT4110/PT4110F
(Ta = 25˚C)
MIN. TYP. MAX. Unit
2
2
-
4.0 - 25 mA mA
- - 1.0
- - 1.2
µA
V
35 - - V
6--V
- 800 ­nm
-60-µs
-53-µsFall Time
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
70
(mW)
60
C
50
40
30
20
10
Collector power dissipation P
0
-
25 0 25 50 75 100
85
Fig. 2 Dark Current vs. Ambient Temperature
-4
10
V
CE
5
= 10V
-5
10
5
-6
10
5
(A)
-7
CEO
10
5
-8
10
5
-9
10
Dark current I
5
-10
10
5
-11
10
5
-
25 0 25 50 75 100
Ambient temperature Ta (˚C)Ambient temperature Ta (˚C)
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