PC812
PC812
High Noise Resistance Type
Photocoupler
■ Features
1. High noise reduction
(Common mode rejection voltage
: TYP. 1.5kV at dV/dt= 2kV/µs,
V
CM
RL= 470Ω, Vnp= 100mV
)
2. High current transfer ratio
(CTR : MIN. 90% at IF= 5mA, VCE=5V
3. High isolation voltage between input and
output (V
: 5 000V
iso
)
rms
4. Compact dual-in-line package
■ Applications
1. Motor-control circuits
2. Computer terminals
3. System appliances, measuring instruments
4. Signal transmission between circuits of
different potentials and impedances
■ Outline Dimensions
± 0.25
2.54
PC812
± 0.5
2
0.5
3
± 0.5
6.5
± 0.1
1 Anode
2 Cathode
θ
4
CTR rank mark
)
Anode mark
1
± 0.2
0.9
± 0.3
1.2
4.58
± 0.5
0.5TYP.
3.5
± 0.5
3.0
(
Unit : mm
Internal connection
diagram
43
21
3 Emitter
4 Collector
7.62± 0.3
θ = 0 to 13 ˚
θ
0.26
)
± 0.1
■ Absolute Maximum Ratings
(
T
= 25˚C
a
)
Parameter Symbol Rating Unit
Input
Forward current I
*1
Peak forward current I
Reverse voltage V
F
FM
R
50 mA
1A
6V
Power dissipation P 70 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation
*2
Isolation voltage
Operating temperature
Storage temperature
*3
Soldering temperature
*1 Pulse width<=100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute
*3 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
CEO
ECO
C
C
P
tot
V
iso
T
opr
T
stg
T
sol
35 V
6V
50 mA
150 mW
200 mW
5 000
V
- 30 to + 100
- 55 to + 125
260 ˚C
rms
˚C
˚C
PC812
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage V
Input
Output Collector dark current I
Transfer
charac-
teristics
*4 Classification table of current transfer ratio is shown below.
Model
No.
PC812A A
PC812B B
PC812C C
PC812
Measurement
conditions
Peak forward voltage V
Reverse current I
Terminal capacitance C
*4
Current transfer ratio
Collector-emitter saturation voltage V
Isolation resistance R
Floating capacitance C
Cut-off frequency f
*4
Response time
*5
Common mode rejection voltage
Rank
mark
CTR (%
90 to 180
150 to 180
240 to 480
A, B or C
90 to 480
I = 5mA
VCE=5V
= 25˚C
T
a
Rise time
Fall time
)
t
(µ s
r
)
TYP.
MAX.
314416
416518
518720
418520
V
CE
= 2mA
I
C
R
L
T
= 25˚C
a
t
TYP.
=2V
= 100Ω
(µ s
f
(
Ta= 25˚C
= 20mA
I
F
F
= 0.5A
I
FM
FM
=4V
V
R
R
V = 0, f = 1kHz
t
= 20V, IF=0
V
CEO
CE
CTR 90 - 480 %
CE (sat
V
= 5mA, VCE=5V
I
F
)
= 20mA, IC= 1mA
I
F
DC500V, 40 to 60%RH
ISO
V = 0, f = 1MHz
f
VCE= 5V, IC= 2mA, RL= 100Ω , - 3dB
c
t
r
VCE= 2V, IC= 2mA, RL= 100Ω
t
f
CM
dV/dt= 2kV/ µ s, R
= 470Ω, Vnp= 100mV, IF=0
L
*5 Test Circuit for V
- 1.2 1.4 V
- - 3.0 V
--10µA
-30 pF
200
--10-7A
- 0.1 0.2 V
5x101010
11
- Ω
- 0.6 1.0 pF
15 80 - kHz
-418µs
-520µs
- 1.5 - k V
CM
)
MAX.
V
= 9V
CC
R
V
L
np
V
CM
VCM: Common mode rejection
voltage
(higher value of pulse wave
dV/dt: Rising factor of voltage
)
Test condition
= 100mV, RL= 470Ω
V
np
dV/dt = 2kV/µ s, IF= 0
)
Fig. 1 Forward Current vs.
Ambient Temperature
60
50
)
40
mA
(
F
30
20
Forward current I
0
-30100 25 50 75 100 125
Ambient temperature Ta (˚C
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
200
)
mW
(
C
150
100
50
Collector power dissipation P
0
-30
)
0 125
25 50 75 100
Ambient temperature Ta (˚C
)