Sharp PC812, PC812A, PC812B, PC812C Datasheet

PC812
PC812
High Noise Resistance Type Photocoupler
Features
1. High noise reduction (Common mode rejection voltage
: TYP. 1.5kV at dV/dt= 2kV/µs,
V
CM
RL= 470, Vnp= 100mV
)
2. High current transfer ratio (CTR : MIN. 90% at IF= 5mA, VCE=5V
3. High isolation voltage between input and output (V
: 5 000V
iso
)
rms
4. Compact dual-in-line package
Applications
2. Computer terminals
3. System appliances, measuring instruments
4. Signal transmission between circuits of different potentials and impedances
Outline Dimensions
± 0.25
2.54
PC812
± 0.5
2
0.5
3
± 0.5
6.5
± 0.1
1 Anode 2 Cathode
θ
4
CTR rank mark
)
Anode mark
1
± 0.2
0.9
± 0.3
1.2
4.58
± 0.5
0.5TYP.
3.5
± 0.5
3.0
(
Unit : mm
Internal connection
diagram
43
21
3 Emitter 4 Collector
7.62± 0.3
θ = 0 to 13 ˚
θ
0.26
)
± 0.1
Absolute Maximum Ratings
(
T
= 25˚C
a
)
Parameter Symbol Rating Unit
Input
Forward current I
*1
Peak forward current I Reverse voltage V
F
FM
R
50 mA
1A
6V Power dissipation P 70 mW Collector-emitter voltage V
Output
Emitter-collector voltage V Collector current I Collector power dissipation P Total power dissipation
*2
Isolation voltage Operating temperature Storage temperature
*3
Soldering temperature
*1 Pulse width<=100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute *3 For 10 seconds
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CEO
ECO
C
C
P
tot
V
iso
T
opr
T
stg
T
sol
35 V
6V
50 mA 150 mW 200 mW
5 000
V
- 30 to + 100
- 55 to + 125 260 ˚C
rms
˚C ˚C
PC812
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage V
Input
Output Collector dark current I
Transfer charac-
teristics
*4 Classification table of current transfer ratio is shown below.
Model
No.
PC812A A PC812B B PC812C C PC812
Measurement
conditions
Peak forward voltage V Reverse current I Terminal capacitance C
*4
Current transfer ratio Collector-emitter saturation voltage V Isolation resistance R Floating capacitance C Cut-off frequency f
*4
Response time
*5
Common mode rejection voltage
Rank mark
CTR (%
90 to 180 150 to 180 240 to 480
A, B or C
90 to 480
I = 5mA VCE=5V
= 25˚C
T
a
Rise time
Fall time
)
t
(µ s
r
)
TYP.
MAX. 314416 416518 518720 418520
V
CE
= 2mA
I
C
R
L
T
= 25˚C
a
t
TYP.
=2V
= 100
(µ s
f
(
Ta= 25˚C
= 20mA
I
F
F
= 0.5A
I
FM
FM
=4V
V
R
R
V = 0, f = 1kHz
t
= 20V, IF=0
V
CEO
CE
CTR 90 - 480 %
CE (sat
V
= 5mA, VCE=5V
I
F
)
= 20mA, IC= 1mA
I
F
DC500V, 40 to 60%RH
ISO
V = 0, f = 1MHz
f
VCE= 5V, IC= 2mA, RL= 100, - 3dB
c
t
r
VCE= 2V, IC= 2mA, RL= 100
t
f
CM
dV/dt= 2kV/ µ s, R
= 470, Vnp= 100mV, IF=0
L
*5 Test Circuit for V
- 1.2 1.4 V
- - 3.0 V
--10µA
-30 pF
200
--10-7A
- 0.1 0.2 V
5x101010
11
-
- 0.6 1.0 pF
15 80 - kHz
-418µs
-520µs
- 1.5 - k V
CM
)
MAX.
V
= 9V
CC
R
V
L
np
V
CM
VCM: Common mode rejection
voltage
(higher value of pulse wave
dV/dt: Rising factor of voltage
)
Test condition
= 100mV, RL= 470
V
np
dV/dt = 2kV/µ s, IF= 0
)
Fig. 1 Forward Current vs.
Ambient Temperature
60
50
)
40
mA
(
F
30
20
Forward current I
0
-30100 25 50 75 100 125
Ambient temperature Ta (˚C
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
200
) mW
(
C
150
100
50
Collector power dissipation P
0
-30
)
0 125
25 50 75 100
Ambient temperature Ta (˚C
)
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