Sharp PC3H710NIP, PC3H711NIP, PC3H712NIP, PC3H715NIP, PC3Q710NIP Datasheet
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PC3H71X NIP Series/PC3Q71X NIP Series
PC3H71X NIP Series
PC3Q71X NIP Series
■ Features
1. Low input current type(IF=0.5mA)
2. High resistance to noise due to high common rejection
voltage (CMR:MIN. 10kV/µs)
3. Mini-flat package
4. Isolation voltage (Viso:2.5kVrms)
5. Recognized by UL, file No. E64380
■ Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
■ Rank Table
Model No. Rank mark Ic (mA) Conditions
PC3H710NIP
PC3H711NIP
PC3H712NIP
PC3H715NIP
A, B or no mark
A
B
A or B
Model No. Rank mark Ic (mA) Conditions
PC3Q710NIP
PC3Q711NIP
A or no mark
A
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Forward current
*1
Input
Output
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*2
Isolation voltage
*3
Soldering temperature
0.5 to 3.5
0.7 to 1.75
1.0 to 2.5
0.7 to 2.5
0.5 to 3.0
1.0 to 2.5
F=0.5mA
I
VCE=5V
a=25°C
T
IF=0.5mA
V
CE=5V
T
a=25°C
(Ta=25°C)
IF
IFM
VR
P 15
VCEO
VECO
IC
PC
Ptot
Topr
T
stg
Viso kVrms
Tsol
10
200
6
70
6
50
150
170
−30 to +100
−40 to +125
2.5
260
mA
mA
mW
mA
mW
mW
°C
°C
°C
V
V
V
Low Input Current Type
Photocoupler
■ Outline Dimensions
PC3H71xNIP Series
Anode mark
1 4
±0.25
±0.3
2.6
1.27
±0.05
0.2
7.0
PC3Q71xNIP Series
16
1.27
10.3
±0.25
±0.3
P C 3 Q 7 1
Primary side mark
±0.2
Epoxy resin
2.6
±0.1
0.1
H 7 1
4.4
5.3
+0.2
−0.7
±0.2
±0.3
6°
32
+0.4
0.5
−0.2
9
±0.2
4.4
±0.1
81
0.4
±0.1
0.4
±0.2
2.0
±0.1
0.1
C0.4
(Input side)
±0.05
0.2
0.2mm or more
Internal connection
diagram
4 3
1 2
Internal connection
diagram
16 14 1215 13 1011
1 3 52 4 76 8
9
(Unit : mm)
1
2
3
4
Epoxy resin
7531
AnodeAnode
642
8
Cathode
1311
15
Emitter
141210
16
Collector
±0.3
5.3
0.5
+0.2
7.0
−0.7
AnodeAnode
Cathode
Emitter
Collector
+0.4
−0.2
9
Soldering area
Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC3H71X NIP Series/PC3Q71X NIP Series
■ Electro-optical Characteristics
Parameter Symbol
Forward voltage
Reverse current
InputOutputTransfer characteristics
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector
current
PC3H71XNIP Series
PC3Q71
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Response time
*1
Common mode rejection voltage
*1 Refer to Fig.1.
XNIP Series
Rise time
Fall time
V
F
IR
Ct
ICEO
BVCEO
BVECO
IC
VCE (sat)
RISO
Cf
tr
tf
CMR
Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
I
F=0mA, VCC=9V, Vnp=100mV
Conditions
I
F=10mA
V
R=4V
V=0, f=1kHz
V
CE=50V, IF=0
I
C=0.1mA, IF=0
I
E=10µA, IF=0
I
F=0.5mA, VCE=5V
F=10mA, IC=1mA
I
DC500V 40 to 60%RH
V=0, f=1MHz
V
CE=2V, IC=2mA, RL=100Ω
Fig.1 Test Circuit for Common Mode Rejection Voltage
V
CM
V
R
L
V
V
np
CM
CC
V
CM :
pulse
=470Ω
R
L
=9V
V
CC
High wave
1) V
capacitance between primary and secondary side.
1)
V
VO
(V
Nearly = dV/dt×Cf×RL)
cp
: Voltage which is generated by displacement current in floating
cp
cp
(dV/d
(Ta=25°C)
MIN.
−
−
−
−
70
6
0.5
−
5×10
−
−
−
10
)
t
TYP. MAX. Unit
1.2
−
30
−
−
−
−
−
10
1×10
11
0.6
4
3
−
1.4
10
250
100
3.5
3.0
0.2
1.0
18
18
V
V
µA
pF
nA
−
−
V
V
mA
V
−
Ω
pF
µs
µs
kV/µs
−
np
Fig.2 Forward Current vs. Ambient
Temperature
10
(mA)
F
5
Forward current I
0
−30 0 25 50 75 100 125
Ambient temperature Ta (°C)
Fig.3
Diode Power Dissipation vs. Ambient
Temperature
15
10
5
Diode power dissipation P (mW)
0
−30 0 25 50 75 100 125
Ambient temperature Ta (°C)
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