Sharp GP1S34 Datasheet
GP1S34
GP1S34
Subminiature, High Sensing
Accuracy Photointerrupter
■ Features
1. Ultra-compact package
2. PWB mounting type
3. High sensing accuracy (Slit width: 0.1mm
4. With a mounting hole
■ Applications
1. Cameras
2. Floppy disk drives
3. Handy scanners
4.2
❈2.5
(
Unit : mm
3
2
3 Emitter
4 Cathode
(
)
C0.8
+
0.1
φ 1.5
-
0
■ Outline Dimensions
Internal connection diagram
)
4 - 0.15
Center of
light path
)
1
(
2.8
+ 0.2
- 0.1
❈3.1
12
4.2
Slit width of
1.21.4
1.45
detector side : 0.1mm
5.2
MIN.
4.0
* Tolerance:± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ): Reference dimensions
* The dimensions indicated by ❈ refer
34
to those measured from the lead base.
4
1
1 Anode
2 Collector
3.9
Rest of gate
4 - 0.5
)
hole
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage
F
V
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation
Operating temperature
Storage temperature T
*1
Soldering temperature
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
P
tot
T
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100
- 25 to + 85
mW
˚C
- 40 to + 100 ˚C
260 ˚C
1mm or more
Soldering area
GP1S34
■ Electro-optical Characteristics
Parameter Symbol MIN. TYP. MAX. Unit
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
Forward current I
Forward voltage V
Reverse current I
Collector dark current
Collector current I
Collector-emitter saturation voltage
Response time
60
50
40
F
30
20
10
Rise time t
Fall time t
(
Ta = 25˚C
)
Conditions
IF= 20mA - 1.2 1.4 V
F
R
I
CEO
C
V
CE(sat
r
f
VR=3V - - 10 µA
VCE= 20V - - 100
VCE= 5V, IF= 5mA 80 - 320 µA
)
IF= 10mA, IC=50µA
VCE= 5V, IC= 100 µ A
= 1 000 Ω
R
L
- - 0.4 V
- 50 150
- 50 150
nA
µ s
µ s
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
mW
80
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
200
)
100
mA
(
50
F
20
10
Forward current I
Ta= 75˚C
50˚C
5
2
1
0 0.5 1 1.5 2
Forward voltage VF (V
- 25˚C
)
25˚C
0˚C
2.5 3
0
- 25 0 25 50 75 100
Ambient temperature T
a
(˚C
Fig. 4 Collector Current vs.
Forward Current
=5V
V
CE
2.0
T
= 25˚C
a
1.8
)
mA
1.6
(
C
1.4
1.2
1.0
0.8
Collector current I
0.6
0.4
0.2
0
0 1020304050
Forward current I
F
(mA
85
)
)
Loading...