GP1S33
GP1S33
Subminiature, Reflow Soldering
Type Photointerrupter
■ Features
1. Ultra-compact package
2. PWB mounting type
3. High sensing accuracy (Slit width: 0.3mm
4. Applying to reflow soldering
Preheat : 160˚C within 120 seconds
Reflow : 200˚C within 60 seconds
(
Peak : 240˚C
)
■ Applications
1. Floppy disk drives
2. Cameras
4.2
❈2.5
(
Unit : mm
3
2
3 Emitter
4 Cathode
(
C0.8
5.2
Rest of gate
■ Outline Dimensions
Internal connection diagram
)
5.0
Center of
light path
3.5
0.2-0.1
+
0.15
-
4
2.01.5
)
1.0
(
3.8
12
4
1
1 Anode
2 Collector
)
0.3
Slit width
(
)
C0.3
4 - 0.5
±
0.5
1.0
* Tolerance:± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ): Reference dimensions
*
The dimensions indicated by ❈ refer
to those measured from the lead base.
34
)
)(
■ Absolute Maximum Ratings
(
Ta = 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage
F
V
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation
Operating temperature
Storage temperature T
*1
Soldering temperature
*1 For 3 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
P
tot
T
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100
- 25 to + 85
mW
˚C
- 40 to + 100 ˚C
260 ˚C
Soldering area
0.5mm or more
GP1S33
■ Electro-optical Chara
Parameter Symbol MIN. TYP. MAX. Unit
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
Forward current I
Forward voltage V
Reverse current I
Collector dark current
Collector current I
Collector-emitter saturation voltage
Response time
60
50
40
F
30
20
10
Rise time t
Fall time t
(
Ta = 25˚C
)
Conditions
IF= 20mA - 1.2 1.4 V
F
R
I
CEO
C
V
CE(sat
r
f
VR=3V - - 10 µA
VCE= 20V - - 100
VCE= 5V, IF= 5mA - µ A
)
= 10mA, IC=40µA
I
F
VCE= 5V, IC= 100 µ A
= 1 000Ω
R
L
100 600
- - 0.4 V
- 50 150
- 50 150
nA
µ s
µ s
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
80
mW
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
- 25˚C
)
25˚C
0˚C
200
)
100
mA
(
50
F
20
10
Forward current I
Ta= 75˚C
50˚C
5
2
1
0 0.5 1 1.5 2 2.5 3
Forward voltage VF (V
0
- 25 0 25 50 75 100
Ambient temperature T
a
(˚C
85
)
Fig. 4 Collector Current vs. Forward Current
1.0
V
=5V
CE
= 25˚C
T
a
0.8
)
mA
(
C
0.6
0.4
Collector current I
0.2
0
04 2081216
Forward current IF (mA
)
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