Sharp GP1S32 Datasheet
GP1S32
GP1S32
Subminiature Photointerrupter
■ Features
1. Ultra-compact package
2. PWB mounting type
3. High sensing accuracy (Slit width : 0.3mm
4. High speed response
■ Applications
1. Floppy disk drives
■ Outline Dimensions
(
Unit : mm
Internal connection diagram
34
)
)
12
1 Anode 3 Emitter
2 Collector 4 Cathode
4.2
(
)
0.3
Slit width
)
1.0
(
Rest of gate
4 - 0.5
* Tolerance:± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ): Reference dimensions
* The dimensions indicated by ❈ refer
to those measured from the lead base.
❈2.5
(
C0.8
)
5.2
MIN.
4.0
Center of
light path
3.5
4 - 0.15
1.15
)
1.0
(
+ 0.2
- 0.1
4.2
+0.2
1.6
- 0.1
❈3.2
2
1
34
■ Absolute Maximum Ratings
(
Ta = 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage
F
V
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation
Operating temperature
Storage temperature T
*1
Soldering temperature
*1 For 5 seconds
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
P
tot
T
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100
- 25 to + 85
mW
˚C
- 40 to + 100 ˚C
260 ˚C
Soldering area
0.6mm or more
GP1S32
■ Electro-optical Characteristics
Parameter Symbol Condition
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Forward voltage V
Reverse current I
Collector dark current
Collector current I
Collector-emitter saturation voltage
Response time
Temperature
60
50
)
mA
(
40
F
30
20
Forward current I
10
Rise time
Fall time
(
Ta= 25˚C
MIN. TYP. Unit
IF= 20mA
F
R
I
CEO
C
V
CE(sat
t
r
t
f
VR=3V
VCE= 20V
VCE= 5V, IF= 5mA
)
= 10mA, IC=50µA
I
F
VCE= 5V, IC= 100 µ A
R
= 1 000Ω
L
- 1.2 V
-- µA
--
50 - µA
-- V
-
-
MAX.
1.4
10
100
300
0.4
35
100
35
100
)
nA
µ s
µ s
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
80
mW
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
200
)
100
mA
(
50
F
20
10
Forward current I
Ta= 75˚C
50˚C
5
2
1
0 0.5 1 1.5 2
Forward voltage VF (V
25˚C
0˚C
- 25˚C
2.5 3
)
0
- 25 0 25 50 75 100
Ambient temperature T
a
(˚C
85
)
Fig. 4 Collector Current vs.
Forward Current
=5V
V
CE
1.0
T
= 25˚C
)
mA
(
C
Collector current I
a
0.8
0.6
0.4
0.2
0
01020
)
Forward current I
(mA
F
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