Sharp GP1S30 Datasheet
GP1S30
GP1S30
Subminiature Photointerrupter
Features
■
1. Compact package
2. PWB mouning type
3. Double-phase phototransistor output type for
detecting of rotation direction and count
4. Detecting pitch:0.6mm
Applications
■
1. Mouses
2. Cameras
■ Outline Dimensions
AA'Section
Slit width of
emitter side
(
)
0.8
Center of
light path
2.5
3.8
1.45
0.9
)
1.0
(
❈
2.54
5
4
* Tolerance:± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ): Reference dimensions
* The dimensions indicated by ❈ refer
to those measured from the lead base.
Internal connection diagram
1
23
1 Anode
2 Cathode
AB
4.0
(
)
C0.3
5- 0.15
1
23
Rest of gate
+ 0.2
- 0.1
A'B'
(
C0.6
(2)
(
PT1
PT2
)
5 - 0.4
Unit : mm
5
4
3 Emitter2
4 Emitter1
5 Collector
BB'Section
4.0
(
)
1.0
2 -(0.37
❈1.27❈1.27
)
)
5.0
MIN.
4.0
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Prameter Symbol Rating Unit
Input
Forward current
Reverse voltage V
I
F
R
50 mA
6V
Power dissipation P 75 mW
V
Collector-emitter voltage 35 V
Output
Emitter-collector Voltage 6 V
Collector current I
Collector power dissipation P
Total power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For MAX. 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CE1O
V
CE2O
V
E1CO
V
E2CO
C
C
tot
opr
stg
sol
20 mA
75 mW
100 mW
- 25 to + 85 ˚C
- 40 to + 100 ˚C
260 ˚C
Soldering area
1mm or more
GP1S30
■ Electro-optical Characteristics
Parameter Symbol
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
F
Forward current I
Forward voltage V
Reverse current I
Collector dark current
Collector current I
Collector-emitter saturation voltage
Response time
60
50
40
30
20
10
Rise time
Fall time
(
Ta = 25˚C
Conditions
IF= 20mA
F
R
I
CEO
C
V
CE(sat
t
t
VR=3V
VCE= 20V
VCE= 5V, IF= 4mA
)
= 8mA, IC= 125µ A
I
F
VCC= 5V, IC= 100µ A µ s
r
RL= 1 000 Ω
f
MIN. TYP. MAX. Unit
- 1.2 1.4 V
--10µA
- - 100
250 - µA
1 000
- - 0.4 V
- 50 150
- 50 150
)
nA
µ s
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
mW
80
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
200
)
100
mA
(
50
F
20
10
Forward current I
Ta= 75˚C
50˚C
5
2
1
0 0.5 1 1.5 2 2.5 3
Forward voltage VF (V
25˚C
0˚C
-
25˚C
)
0
- 25 0 25 50 75 100
Ambient temperature T
85
)
(˚C
a
Fig. 4 Collector Current vs. Forward Current
V
=5V
CE
10.0
T
= 25˚C
)
mA
(
C
Collector current I
a
8.0
6.0
4.0
2.0
0
01020304050
)
Forward current I
(mA
F
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