Sharp GP1S22, GP1S21 Datasheet

GP1S21/GP1S22

GP1S21/GP1S22

Subminiature Photointerrupter

■ Features

■ Outline Dimensions

1. Ultra-compact

2. PWB mounting type package

3. High sensing accuracy

Slit width ; GP1S21: 0.8mm

()

GP1S22: 0.3mm

■ Applications

1. Cameras

2. Floppy disk drives

(

Light axis

(

C0.3

4 - 0.15

2.8

4.2

1.51.2

)

)

1.0

(

)

❈3.1

1

2

4

3

Internal connection

diagram

2

1

1 Anode
2 Cathode 4 Collector

3.9

5.2

Rest of gate

MIN.

(2)

4 - 0.5

4.0

* Tolerance:± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ): Reference dimensions
* The dimensions indicated by

❈ refer to those measured

from the lead base.

3 Emitter

4.2

★ Slit width

❈2.5

(

Unit : mm

3

4

(

)

C0.8

+ 0.1

φ 1.5

- 0

★ Slit width
GP1S21 : 0.8mm
GP1S22 : 0.3mm

)

Hole

■ Absolute Maximum Ratings

(

Ta = 25˚C

)

Parameter Symbol Rating Unit

Input

Forward current I
Reverse voltage V

F

R

50 mA

6V
Power dissipation P 75 mW
Collector-emitter voltage V

Output

Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation P
Operating temperature T
Storage temperature T

*1

Soldering temperature T

*1 For 5 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

CEO

ECO

C

C

tot

opr

stg

sol

35 V

6V

20 mA
75 mW

100 mW

- 25 to + 85 ˚C

- 40 to + 100 ˚C
260 ˚C

Soldering area

1mm or more

GP1S21/GP1S22

■ Electro-optical Characteristics

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Input

Output Collector dark current I

Transfer
charac­teristics

Fig. 1 Forward Current vs. Ambient

Temperature

)
mA

(

Forward current I

Forward voltage V
Reverse current I

Collector Current

Collector-emitter
saturation voltage

Response time

60

50

40

F

30

20

10

GP1S21
GP1S22
GP1S21
GP1S22

Rise time

Fall time

IF= 20mA - 1.2 1.4 V

F

VR=3V - - 10 µA

R

CEO

Ic

V

CE(sat

t
t

VCE= 20V ­VCE= 5V, IF= 1.5mA

= 5V, IF= 5mA

V

CE

= 3mA, IC=27µA

I

F

)

= 10mA, IC=50µA

I

F

r

IC= 0.1mA, VCE= 5V, RL=1kΩ

f

Fig. 2 Power Dissipation vs.

27

100

- - 0.4 V

- - 0.4 V

- µ s

- µ s

Ambient Temperature

120

P

P, P

tot

c

100

)
mW

80

(

60

40

Power dissipation P

20

(

Ta = 25˚C

-7

1x10

-

- µA

260

- µA

1300

50

150

50

150

)

A

0

- 25 0 25 50 75 100
Ambient temperature Ta (˚C

Fig. 3 Forward Current vs.

Forward Voltage

500

Ta= 75˚C

200

100

)

50

mA

(

F

20

10

5

Forward current I

2
1

0 0.5 1 1.5 2

50˚C

Forward voltage VF (V

25˚C

0˚C

- 25˚C

2.5 3
)

85

)

0

- 25 0 25 50 75 100
Ambient temperature Ta (˚C

85

)

Fig. 4 Collector Current vs.

Forward Current

2.0
VCE=5V

1.8
T

= 25˚C

a

1.6

)

1.4

mA

(

C

1.2

1.0

0.8

0.6

Collector current I

0.4

0.2

0

3.5

1

02

GP1S21

Forward current IF (mA

GP1S22

103456789

)