Schottky Barrier Diode
0.071 (1.80)
0.055 (1.40)
CDBW120-G Thru. CDBW140-G
Forward current: 1.0A
Reverse voltage: 20 to 40V
RoHS Device
COMC HIP
SMD Dio de s Sp ec ia li st
Features
-For use in l ow volta ge, high f requency inverters.
-Free whe eling, and polarity protection applications.
Mechanical Data
-Case: SO D-123, m olded pl astic.
-Terminals: solderable per MIL-STD-750, method
2026.
-Polari ty: indi cated by c athode e nd.
-Weight: approx. 0.008 grams.
Marking
CDBW012 0-G: SJ
CDBW013 0-G: SK
CDBW014 0-G: SL
Maximum Ratings ( At Ta= 25 C, unle ss oth erwi se not ed)
Parameter
Non- re pet it ive pea k re ver se v oltag e
Peak r ep eti ti ve p eak r ev ers e vo ltage
Wor kin g pe ak reve rs e vol ta ge
DC blo ck ing v ol tage
O
Symbol
VR M
VR RM
VRW M
VR
CDBW0120-G
20
20
SOD-1 23
Dimensions in inches and (millimeter)
CDBW0130-G CDBW0140-G
30
30
40
40
Unit
V
V
RMS re ve rse v ol ta ge
Ave rag e re ctifi ed o utp ut c urren t
Peak f or war d su rg e cur re nt @8 .3 ms
Repe ti tiv e pe ak forw ar d cur re nt
Powe r di ssi pa tion
Ther ma l res is ta nce , ju nct io n to a mbi en t
Stor ag e tem pe ra tur e
Electrical Characteristics ( At Ta= 25 C, unle ss oth erwi se not ed)
Parameter
CDBW 01 20-G
Reve rs e bre ak down vo lt age
Reve rs e vol ta ge leak ag e cur re nt
Forw ar d vol ta ge
Diod e ca pac it ance
IR= 1mA CD BW 0130- G
CDBW 01 40-G
VR =20V C DB W0120 -G
VR =30V C DB W0130 -G
VR =40V C DB W0140 -G
CDBW 01 20-G
IF= 1A CDB W0 130-G
CDBW 01 40-G
CDBW 01 20-G
IF= 3A CDB W0 130-G
CDBW 01 40-G
VR =4V, f=1 MHz
VR (RM S)
IO
IFS M
IFR M
PD
RθJA
TST G
O
Condi tion s
14
Symbol
VBR
IR
VF
CD
21
1
25
625
250
500
-65 ~ +1 50
28
Min. Max.
20
30
40
1
0.45
0.55
0.60
0.75
0.87 5
0.90
120
V
A
A
mA
mW
O
C/W
O
C
Unit
V
mA
V
pF
QW- BB0 20
REV:A
Page 1
Schottky Barrier Diode
COMC HIP
SMD Dio de s Sp ec ia li st
RATING AND CHARACTERISTIC CURVES (CDBW120-G Thru. CDBW140-G)
Fig.1 Typical Forward Current Derating Curve
2
1
0.5
Ind uctiv e or resi stive l oad
Aver age F orw ard C urr ent ( A)
0.3 75" (9. 5mm) le ad leng th
0
0 75
50
25
Case Temper atu re ( C)
100
125
O
Fig.3 Typical Instantaneous Forward
Characteristics
100
O
TJ= 125 C
10
150
175
Fig.2 M axim um Non-Repetitive Peak
Forward Surge Current
30
25
20
15
10
5
Peak Forward Surge Current (A)
0
1 100
10
Number of Cycl es at 60Hz
Fig.4 Typical Reverse Characteristics
100
O
10
TJ= 125
Inst ant ane ous Reverse Voltage (mA)
1.0
0.1
0.0 1
0.0 0 1
0
20 4 0 60
TJ= 75 C
TJ= 25 C
O
O
Percent of Rat ed Pe ak Re ver se Voltage (%)
Fig.6 Typical Transient Thermal Impedance
100
O
10
1
80
100
O
1
0.1
Inst ant aneous Forward Current (A)
0.0 1
0
0.2 0.4 0.6
TJ= 25 C
0.8 1.2
1.0
Pul se widt h=300μs
1% du ty cycl e
1.4
1.8
Inst ant ane ous Forw ard Voltage (V)
Fig.5 Typical Junction Capacitance
1000
O
TJ= 25 C
f=1 MHz
Vsig =50 mV
100
Junction Capacitance (pF)
10
0.1 100
1
10
Reverse Voltage (V)
QW- BB0 20
Tran sient Th erm al Im ped anc e ( C/W)
0.1
0.0 1 10010.1
10
t-Pu lse D ura tio n (Se c.)
REV:A
Page 2