The VNQ860, VNQ86 0SP are mono lithic devi ces
made using| STMicroelectronics VIPower M0-3
Technology, intended for driving any kind load
with one side connected to ground. Active current
limitation combined with thermal shutdown and
automatic restart protect the device against
overload. Device automatically turns off in case of
ground pin disconnection. This device is
BLO C K DIAGRA M
10
1
SO-20
PowerSO-10™
ORDER CODES
SO-20
PowerSO-10™
VNQ860
VNQ860SP
especially suitable for industrial applications in
norms conformity with IEC1131 (Programmable
Controllers International Standard).
V
CC
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
GND
I/O 1
I/O 2
I/O 3
I/O 4
STATUS
V
CC
CLAMP
LOGIC
OVERVOLTAG E
UNDERVOLTAGE
OVERTEMP
OVERTEMP
OVERTEMP
OVERTEMP
DETECTION
DETECTION
Power CLAMP
CURRENT LIMITER
Power CLAMP
CURRENT LIMITER
Power CLAMP
CURRENT LIMITER
Power CLAMP
CURRENT LIMITER
Januar y 20 031/10
1
VNQ860 / VNQ860SP
ABSOLUTE MAXIMUM RATING
SymbolParameter
tot
DC supply voltage41V
Reverse DC supply volt age- 0.3V
CC
DC reverse ground pin current- 200mA
DC output currentInternally LimitedA
Reverse DC output current - 2A
DC Input current+/- 10mA
Input voltage range-3/+V
IN
DC Status voltage+ V
Electrostatic discharge (R=1.5 KΩ; C=100 pF)2000V
Power dissipation TC=25 °C1690W
Therma l resistance junction -pins(MAX)8Therma l resistance junction -ambient (*)(MAX)5850
Therma l resistance junction -case(MAX)-1.4
SO-20PowerSO-10
(*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all VCC pins.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40oC<Tj<150oC; unless otherwise specified)
POWER
SymbolParameterTest ConditionsMinTypMaxUnit
V
CC
V
USD
V
OV
R
ON
I
S
I
LGND
I
L(off)
I
OUTleak
I
OUTleak
Operating supply voltage5.536V
Undervolt age shut-down345.5V
Overvoltage shut-down364248V
On state resistance
(per ch annel)
Supply current
Output current
Off state output current VIN=V
Off state output leakage
current
Off state output leakage
current
I
=0.25A ; Tj=25oC
OUT
I
=0.25A
OUT
Off state;
V
=24V; Tc=25oC
CC
On state (all channels on)
V
CC-VSTAT=VIN=VGND
V
=0V
OUT
V
IN=VGND
T
amb
V
IN=VGND
V
OUT
=0V010µA
OUT
=0V; VCC=V
=25oC
=0V; VCC=24V;
=10V; T
amb
=24V
OUT
=25oC
=24V;
Value
70
5
Unit
o
C/W
o
C/W
o
C/W
270
540
120
10
mΩ
mΩ
µA
mA
1mA
240µA
100µA
SWITCHING (VCC=24V) (Per channel)
SymbolPar am eterTest ConditionsMinTypMaxUnit
Turn-on delay time
Turn-off delay time
/dt)onTurn-on voltage slo peRL=96Ω from V
/dt)
Turn-off voltage slopeRL=96Ω from V
off
(dV
(dV
t
D(on)
t
D(off)
OUT
OUT
RL=96Ω from VIN rising edge to
V
=2.4V
OUT
RL=96Ω from VIN falling edge to
V
=21.6V
OUT
=2.4V to 19.2V0.75V/µs
OUT
=21.6V to 2.4V0.2 5V/µs
OUT
10µs
40µs
PROTECTIONS (Per channel)
SymbolParameterTest ConditionsMinTypMaxUnit
Current limitation0.350.71.1A
Thermal hysteresis715
Thermal shut-down
temperature
150175200
Reset temperature135
Turn-off output clamp voltage I
=0.25AVCC-47 VCC-52 VCC-59V
OUT
T
T
V
demag
I
lim
(hyst)
TSD
T
R
o
o
o
C
C
C
3/10
1
VNQ860 / VNQ860SP
ELECTRICAL CHARACTERISTICS (continued)
LOGIC INPUT (Per channel)
SymbolParameterTest ConditionsMinTypMaxUnit
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
I
IN
V
OL
STATUS PIN
SymbolParameterTest conditionsMinTypMaxUnit
V
STAT
I
LSTAT
C
STAT
TRUTH TABLE
CONDITIONSMCOUTnI/OnOUTPUTnSTATUS
Normal op eration
Current limit ati on
Overtemperature
Undervoltage
Overvoltage
Low level input voltag e1.25V
Low level input curr entVIN=1.25V1µA
High level input v oltage3.25V
High level i n put currentVIN=3.25V10µA
Input hysteresis Voltage0.5V
Input curren tVIN=VCC=36V200µA
I/O Output voltageIIN=5mA (Faul t condition)1V
Status lo w output voltageI
Status leakage currentNormal operation; V
Status pin input cap acitanceNormal operation; V
L
H
L
H
L
H
L
H
L
H
=5mA (Fau lt co nd i tion)1V
STAT
STAT=VCC
STAT
L
H
L
H
L
Driven low
L
H
L
H
=36V10µA
=5V100pF
L
H
L
X
L
L
L
L
L
L
H
H
H
H
L
L
X
X
H
H
4/10
2
SWITCHING CHARACTE RISTICS
V
OUT
/dt)
OUT
VNQ860 / VNQ860SP
80%
on
t
r
10%
90%
t
f
(dV
OUT
/dt)
off(dV
t
V
IN
Typical application schematic
MCOUTn
MCINn
MCU
t
d(on)
I/On
t
d(off)
OUTPUTn
VNQ860
t
5/10
1
VNQ860 / VNQ860SP
Figur e 1: Waveforms
V
I/On
V
OUTn
V
STAT
V
V
V
V
CC
I/On
OUTn
STAT
V
USD
NORMAL OPERATION
UNDERVOLTA GE
V
USDhyst
undefined
V
V
V
V
V
I
CC
I/On
OUTn
STAT
T
V
OUTn
V
T
TSD
T
R
j
MCOUT
I/On
STAT
VCC>V
V
USD
OVERVOLTAG E
OV
V
OVhyst
OVERTEMPERATURE
6/10
1
SO-20 MECHANICAL DATA
VNQ860 / VNQ860SP
DIM.
A2.650.104
a10.100.200.0040.007
a22.450.096
b0.350.490.0130.019
b10.230.320.0090.012
C0.500.020
c145° (typ.)
D12.6013.000.4960.512
E10 .0010.650.3930.419
e1.270.050
F7.407.600.2910.299
L0.501.270.190.050
M0.750.029
S8° (max.)
MIN.TYPM AX.MIN.TYP .MAX.
mm.inch
7/10
VNQ860 / VNQ860SP
PowerSO-10™ MECHANICAL DATA
DIM.
MIN.TYPMAX.MIN.TYP.MAX.
mm.inch
A3.353.650.1320.144
A (*)3.43.60.1340.142
A10.000.100.0000.004
B0.400.600.0160.024
B (*)0.370.530.0140.021
C0.350.550.0130.022
C (*)0.230.320.0090.0126
D9.409.600.3700.378
D17.407.600.2910.300
E9.309.500.3660.374
E27.207.600.283300
E2 (*)7.307.500.2870.295
E45.906.100.2320.240
E4 (*)5.906.300.2320.248
e1.270.050
F1.251 .350.0490.053
F (*)1.201.400.0470.055
H13.8014.400.5430.567
H (*)13.8514.350.5450.565
h0.500.002
L1.201.800.0470.070
L (*)0.801.100.0310.043
α0º8º0º8º
α (*)2º8º2º8º
(*) Muar only POA P013P
8/10
HE
h
A
F
A1
10
1
eB
0.25
D
= =
D1
= =
E2
DETAIL "A"
DETA IL "A"
B
0.10 A
SEATING
PLANE
A
C
α
B
E4
SEATING
PLANE
A1
L
P095A
VNQ860 / VNQ860SP
PowerSO-10™SUGGESTED PAD LAYOUT
14.6 - 14.9
10.8 - 11
6.30
0.67 - 0.73
1
2
3
9.5
4
5
10
0.54 - 0.6
9
8
7
1.27
6
TAPE AND REEL SHIPMENT (suffix “1 3TR”)
TUBE SHIPMENT (no suffix)
C
A
B
A
All dimensi ons ar e in mm.
Base Q.ty Bulk Q.ty Tube length (± 0.5) AB C (± 0.1)
Casablanca50100053210.4 16.40.8
Muar50100053 24.9 17.20.8
MUARCASABLANCA
B
REEL DIMENSIONS
Base Q.ty600
Bulk Q.ty600
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)24.4
N (min)60
T (max)30.4
C
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 198 6
Information furnished is believed to be a c c ur ate and reliab le. However, STMicroelectronics ass um es no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or oth er wise under any patent or patent r ights of STMicroelectronics . Specificatio ns m entioned in this publication are
subject to c hange without notice. This publication s upersedes an d r eplaces all information p r ev iously suppl ied. STMicroelectronic s pr oducts
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
The ST logo is a trademark of STM ic r oelectronics
2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.
STMicroelectronics GROUP OF COMPANIES
http://www.st.com
10/10
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