SGS Thomson Microelectronics VND670SP Datasheet



VND670SP

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS

GATE DRIVER (BRIDGE CONFIGURATION)

TYPE R

DS(on)

I

OUT

V

DSS

VND670SP 30 mΩ 15 A 40 V

■ OUTPUT CURRENT:15A PER CHANNEL

■ 5V LOGIC LEVEL COMPATIBLE INPUTS

■ GATE DRIVE FOR TWO EXTERNAL POWER

MOS

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUT-DOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT DOWN

■ CROSS-CONDUCTION PROTECTION

■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER

CONSUMPTION

■ PWM OPERATION UP TO 10 KHz

■ PROTECTION AGAINST:

LOSS OF GROUND AND LOSS OF V

■ REVERSE BATTERY PROTECTION (*)

CC

DESCRIPTION

The VND670SP is a monolithic device made using STMicroelectronics VIPower technology, intended for driving motors in full bridge

BLOCK DIAGRAM

10

1

PowerSO-10

configuration. The device integrates two 30 m Power MOSFET in high side configuration, and provides gate drive for two external Power MOSFET used as low side switches.IN allow to select clockwise or counter clockwise

and IN

A

drive or brake; DIAGA/ENA, DIAGB/ENBallow to disable one half bridge and feedback diagnostic. Built-in thermal shut-down, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.

V

CC

Ω

B

DIAGA/EN

DIAG

PWM

(*) See note at page 5

IN

A

IN

B

A

/EN

B

Undervolt.

Overtemp.AOvertemp.

INTERNAL

SUPPLY

LOGIC

B

Current

Limiter B

Short to battery

Current

Limiter A

GND

OUT

GATE

A

B

A

B

June 2000 1/13

1

VND670SP

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

I

max1

I

max2

I

EN

I

pw

I

gs

V

ESD

T

STG

CURRENT AND VOLTAGECONVENTIONS

Supply voltage -0.3 .. 40 V

CC

Maximum output current (continuous) 15 A Maximum output current (250 ms pulse duration) 20 A Reverse output current (continuous) -15 A

R

Input current +/- 10 mA

IN

Enable pin current +/- 10 mA PWM pin current +/- 10 mA Output gate current +/- 20 mA Electrostatic discharge (R=1.5kΩ, C=100pF) 2000 V Junction operating temperature -40 to 150 °C

j

Storage temperature -55 to 150 °C

I

CC

I

INA

I

INB

I

ENA

I

ENB

IN

A

IN

B

DIAGA/EN DIAGB/EN

I

pw

PWM

V

CC

OUT

A

OUT

B

A

B

GATE GATE

GND

A B

I

gsB

I

gsA

V

gsB

I

V

OUTB

gsA

I

OUTA

V

OUTB

V

OUTA

V

CC

V

INA

INB

V

ENB

V

pw

V

ENA

CONNECTION DIAGRAM (TOP VIEW)

INPUT B DIAG

/EN

B

A

/EN

B

A

V

CC

PWM DIAG INPUT A

10

I

GND

6 7

8 9

5 4 3

2 1

OUTPUT B GATEB GROUND GATEA OUTPUT A

11

2/13

1

VND670SP

THERMAL DATA

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

(*) When mounted using the recommended pad size on FR-4 board (See AN515 Application Note).

ELECTRICAL CHARACTERISTICS (VCC=9V up to 18V; -40°C<Tj<150°C; unless otherwise specified)

POWER

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

R

ON

I

s

V

gate

V

gs,cl

Thermal resistance junction-case (per channel) (MAX) 1.4 °C/W

(*) Thermal resistance junction-ambient (MAX) 50 °C/W

Operating supply voltage 5.5 26 V On state resistance

Supply current

=12A

I

LOAD

I

=12A; Tj=25oC26

LOAD

ON state OFF state

50 30 15 40

mΩ mΩ mΑ

µA Gate output voltage 5.0 8.5 V Gate output clamp voltage Igs=-1 mA 6.8 7.4 8.5 V

SWITCHING (VCC=13V, R

LOAD

=1.1Ω)

Symbol Parameter Test Conditions Min Typ Max Unit

(dV (dV

t

D(on)

t

D(off)

OUT OUT

t

dong

t

doffg

t

del

t

r

t

f

/dt) /dt)

rg

fg

Turn-on delay time

50 150 µs Turn-on delay time 45 135 µs Output voltage rise time 50 150 µs Output voltage fall time 40 120 µs Turn-on voltage slope 160 500 V/ms

on

Turn-off voltage slope 230 1200 V/ms

off

VgsTurn-on delay time Vgsrise time 2.6 10 µs VgsTurn-off delay time 1.0 5.0 µs Vgsfall time 2.2 10 µs External MOSFET turn-on

dead time

Input rise time < 1µs (see fig. 1)

C1=4.7nF

0.5 2 µs

Break to ground configuration (see fig. 2)

(see fig. 3) 600 1800 µs

150

PROTECTION AND DIAGNOSTIC

Symbol Parameter Test Conditions Min Typ Max Unit

V

T

V

USD

I

LIM

TSD

V

OV

ocl

sat

Undervoltage shut-down 5.5 V Overvoltage shut-down 36 43 V Current limitation 30 45 A Thermal shut-down temperature

Output turn-off clampvoltage External MOSFET saturation

voltage detection threshold

V

= 3.25 V 150 170 200 °C

IN

=12A, L=6mH

I

LOAD

V

-55 VCC-41 V

CC

2.5 4.2 5.5 V

3/13

1

VND670SP

ELECTRICAL CHARACTERISTICS (continued)

PWM

Symbol Parameter Test Conditions Min Typ Max Unit

V

pwl

I

pwl

V

pwh

I

pwh

V

pwhhyst

V

pwcl

V

pwtest

I

pwtest

LOGIC INPUT (INA/INB)

Symbol Parameter Test Conditions Min Typ Max Unit

V

IL

I

INL

V

IH

I

INH

V

IHYST

V

ICL

PWM low level voltage

1.5 V

PWM pin current Vpw=1.5V 1 µA PWM high level voltage

3.25 V

PWM pin current Vpw=3.25V 10 µA PWM hysteresis voltage 0.5 V

PWM clamp voltage

I

pw

I

pw

=1mA =-1mA

V

CC

-5.0

+0.3

VCC+0.7

-3.5

VCC+1.0

-2.0 Test modePWM pin voltage -3.5 -2.0 -0.5 V Test modePWMpin current V

= -2.0 V -2000 -500 µA

pwtest

Input low level voltage 1.5 V Input current VIN=1.5 V 1 µA Input high level voltage 3.25 V Input current VIN=3.25 V 10 µA Input hysteresis voltage 0.5 V

Input clamp voltage

I

IN

I

IN

=1mA =-1mA

6.8

-1.0

7.4

-0.7

8.5

-0.3

V V

ENABLE (LOGIC I/O PIN)

Symbol Parameter Test Conditions Min Typ Max Unit

Normal operation

V

I

V

I

ENH

V

EHYST

V

ENCL

V

ENL

ENH

DIAG

Enable low level voltage

(DIAG

/ENXpin acts as an

X

input pin)

1.5 V

Enable pin current VEN= 1.5 V 1 µA

Normal operation

Enable high level voltage

/ENXpin acts as an

(DIAG

X

input pin)

3.25 V

Enable pin current VEN= 3.25 V 10 µA

Normal operation

Enable hysteresis voltage

Enable clamp voltage

/ENXpin acts as an

(DIAG

X

input pin)

=1mA

I

EN

IEN=-1mA

0.5 V

6.8

-1.0

7.4

-0.7

8.5

-0.3

Fault operation

Enable output low level voltage

/ENXpin acts as an

(DIAG

X

input pin)

=1.6 mA

I

EN

0.4 V

V V

4/13

2