Datasheet VN820SP13TR, VN820SP, VN820SO, VN820PT13TR, VN820PT Datasheet (SGS Thomson Microelectronics)

®

VN820 / VN820SO

/ VN820SP / VN820-B5 / VN820PT

HIGH SIDE DRIVER

TYPE R

DS(on)

I

OUT

V

CC

VN820
VN820SP
VN820-B5

40 mΩ 9 A 36 V
VN820SO
VN820PT

■ CMOS COMPATIBLE INPUT

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VN820, VN820SP, VN820-B5, VN820SO,
VN820PT are monoli thic devices made by using
STMicroelectronics VIPower M0-3 Technology,
intended for dri ving any kind of l oad wit h one side
connected to ground.
Active VCC pin voltage clamp prote cts the device

against low energy spikes (see ISO7637 transient

BLOCK DIAGRAM

10

1

PowerSO-10™

PENTAWATT

P2PAK

SO-16L

PPAK

ORDER CODES

PACKAGE TUBE T&R

PENTAWATT

VN820

­PowerSO-10™ VN820SP VN820SP13TR
P2PAK VN820-B5 VN820-B513TR
SO-16L VN820SO VN820SO13TR
PPAK VN820PT VN820PT13TR

compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protect the device against overload.

The device detects open load condition both is on
and off state. Output shorted to VCC is detected in

the off state. Device automatically turns off in case
of ground pin disconnection.

V

CC

OVERVOLTAGE

DETECTION

UNDERVOLTAGE

DETECTION

Power CLAMP

DRIVER

CURRENT LIMITER

ON STATE OPENLOAD

DETECTION

OFF STATE OPENLOAD

AND OUTPUT SHORTED TO V

DETECTION

OUTPUT

CC

GND

INPUT

STATUS

(*) See application schematic at page 9

V

CC

CLAMP

OVERTEMPERATURE

DETECTION

LOGIC

June 20 03 1/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

DC Supply Vol tage 41 V

V

CC

- V

- I

- I

I

Reverse DC Supply Volt age - 0.3 V

CC

DC Reverse Ground Pin Current - 200 mA

GND

DC Output Current Internally Limited A

I

OUT

Reverse DC Ou tput Current - 9 A

OUT

DC Input Current +/- 10 mA

I

IN

DC Status Curr ent +/- 10 mA

STAT

Electrostatic Discharge
(Human Bo dy Model: R=1 .5KΩ; C=100pF)

ESD

- INPUT

- STATUS

V

- OUTPUT

- V

CC

E

E

E

Maximum Switching Energy (L=4mH; RL=0Ω;

MAX

V

=13.5V ; T

bat

Maximum Switching Energ y (L=3 .7mH;

MAX

RL=0Ω; V
Maximum Switching Energy (L=4.48mH;

MAX

RL=0Ω; V
Power Diss ip ation TC=25°C 65.8 65.8 65.8 8.3 65.8 W

P

tot

Junction Operating Temperature Internally Limited °C

T

j

Case Oper ating Temperature - 40 to 150 °C

T

c

Storage Temperature - 55 to 150 °C

T

stg

jstart

=13.5V ; T

bat

=13.5V ; T

bat

=150ºC ; IL=13A)

=150ºC ; IL=13A)

jstart

=150ºC ; IL=13A)

jstart

PowerSO-10

481 481 mJ

Value

™ PENTAWATT P

4000
4000
5000
5000

2

PAK SO-16L PPAK

438 mJ

526 mJ

Unit

V
V
V
V

CONNECTION DIAGRAM (TOP VIEW)

GROUND

INPUT

STATUS

N.C.

N.C.

6
7
8
9

10

V

CC

PowerSO-10

5
4
3
2
1

11

™

OUTPUT
OUTPUT
N.C.
OUTPUT
OUTPUT

PPAK / P2PAK / PENTAWATT

CURRENT AND VOLTAGE CONVENTIONS

I

IN

I

STAT

V

IN

V

STAT

INPUT

STATUS

V

CC

GND

OUTPUT

I

GND

I

OUT

V
N.C.
GND
INPUT
STATUS
N.C.
N.C.
V

V

OUT

CC

CC

1

8

V

16

CC

OUTPUT
OUTPUT
OUTPUT
OUTPUT
OUTPUT
OUTPUT
V

9

CC

SO-16L

I

S

V

CC

2/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standard single-sided FR-4 boar d with 0.5cm2 of Cu (at leas t 35µ m t hick) .
(**) When mounted on FR4 printed circuit board with 0.5cm

Thermal Resistance Junction-case Max 1.9 1.9 1.9 - 1.9 °C/W

Thermal Resistance Junction-lead Max - - - 15 - °C /W
Thermal Resistance Junction-ambient Max 51.9 (*) 61.9 (*) 51.9 (*) 6 5 (**) 76.9 (*) °C/W

PowerSO-10

2

of Cu (at leas t 35µ thick) connec ted to all VCC pins.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C unless otherwise specified)
POWER

Symbol Parameter Test Conditions Min Typ Max Unit

CC

OV

ON

S

Oper ating Su pp ly Voltag e 5.5 13 36 V
Undervolt age Shut- down 3 4 5.5 V
Undervolt age Shut- down

hysteresis
Overvolt age Shut-d own 36 V

=3A; Tj=25°C; VCC>8V

I

On State Resistance

Supply Current

Off State Output Curr ent VIN=V
Off State Output Curr ent VIN=0V; V
Off State Output Curr ent VIN=V
Off State Output Curr ent VIN=V

OUT

I

=3A; VCC>8V

OUT

Off Stat e; V
Off Stat e; V

Tj=25°C

On State; V

OUT

OUT
OUT

=13V; VIN=V

CC

=13V; VIN=V

CC

=13V; VIN=5V; I

CC

=0V 0 50 µA

=3.5V -75 0 µA

OUT

=0V; Vcc=13V; Tj =125°C 5 µA
=0V; Vcc=13V; Tj =25°C 3 µ A

V

V

USD

V

USDhyst

V
R

I

I

L(off1)

I

L(off2)

I

L(off3)

I

L(off4)

Value

™ PENTAWATT P

=0V

OUT

=0V;

OUT

=0A

OUT

2

PAK SO-16L PPAK

0.5 V

40
80

10

10

2

25

20

3.5

Unit

mΩ
mΩ

µA

µA

mA

SWITCHING (VCC=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

RL=4.3Ω from VIN rising ed ge to
V

=1.3V

OUT

RL=4.3Ω from VIN falling edge to
V

=11.7V

OUT

RL=4.3Ω from V
V

=10.4V

OUT

RL=4.3Ω from V
V

=1.3V

OUT

OUT

OUT

=1.3 to

=11.7 to

30 µs

30 µs

See

relative

diagram

See

relative

diagram

dV

dV

t

d(on)

t

d(off)

OUT

OUT

Turn-on Delay Time

Turn-off Delay Tim e

/dt

Turn-on Voltage Slope

(on)

/dt

Turn-off Voltage Slope

(off)

INPUT PIN

Symbol Parameter Test Conditions Min Typ Max Unit

Input Low Level 1.25 V

IL

Low Level Input Current VIN=1.25V 1 µA

IL

Input High Level 3.25 V

IH

High Level Input Current VIN=3.25V 10 µA
Input Hysteresis Voltage 0.5 V

Input Clamp Voltage

I

IN

I

IN

=1mA
=-1mA

66.8

-0.7

8V

V

V

V

I

V

I

IH

I(hyst)

ICL

V/µs

V/µs

V

3/34

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

I

LSTAT

C

STAT

V

SCL

Status Low Output Voltage I
Status Leakage Current Normal Operation V
Status Pin Input

Capacitance
Status Clamp Voltage

PROTECTIONS

Symbol Parameter T est Conditions Min Typ Max Unit

T

T

t

V

demag

TSD

T

hyst

SDL

I

lim

Shut-down Temperature 150 175 200 °C

Reset Temp erature 135 °C

R

Ther ma l Hy steres is 7 15 °C
Statu s delay in ov erload

condition
Current limitation
Turn-off Output Clamp

Voltage

=1.6mA 0.5 V

STAT

Normal Operation V

=1mA

I

STAT

I

=-1mA

STAT

T

j>TTSD

=5V 10 µA

STAT

=5V 100 pF

STAT

66.8

-0.7

20 µs

9132020A

5.5V<V
I

OUT

<36V

CC

=3A; VIN=0V; L= 6m H VCC-41 VCC-48 VCC-55 V

8V

V

A

OPENLOAD DETECTION

Symbol Parameter Test Conditions Min Typ Max Unit

OL

Openload ON State
Detectio n Threshold
Openload ON State
Detection Delay
Openload OFF State
Voltage Det ection
Threshold
Openl o ad Detect ion De l a y

at Turn Off

V

> V

OUT

=5V 70 150 300 mA

V

IN

=0A 200 µs

I

OUT

V

=0V 1.5 2.5 3.5 V

IN

OVERTEMP STATUS TIMING

I

< I

OUT

OL

OL

V

V

IN

STAT

Tj > T

TSD

1000 µs

I

OL

t

DOL(on)

V

t

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

IN

V

STAT

4/34

2

t

DOL(off)

t

DOL(on)

t

SDL

t

SDL

Switching time Waveforms

V

OUT

dV

/dt

OUT

(on)

V

IN

t

d(on)

80%

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

90%

dV

/dt

OUT

(off)

10%

t

t

d(off)

t

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

Current Limitation

Overtemperature

Undervo l tage

Overvoltage

Output Voltage > V

Output Current < I

OL

OL

L
H

L
H
H

L
H

L
H

L
H

L
H

L
H

L

H

L
X
X

(T

(T

< T

j

> T

j

L

L

L

L

L

L
H

H

L
H

TSD

TSD

H
H

H
) H
) L

H

L

X

X

H

H

L

H

H

L

5/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

OPEN LOAD DETECTION IN OFF STATE

Off state open load detection requires an external pull-up
resistor (R

positive supply voltage (V

) connected between OUTPUT pin and a

PU

) like the +5 V line used to

PU

supply the microprocessor.
The external resistor has to be selected according to the
following requirements:

1) no f al se op en load i nd icat ion wh en load i s co nne cted :
in thi s case we have to avoi d V

V

; this res ults in the following condition

Olmin

=(VPU/(RL+RPU))RL<V

V

OUT

to be hi gher than

OUT

Olmin.

Open Load detection in off state

INPUT

DRIVER

+

LOGIC

2) no misdetection when load is disconnected: in this
case the V

results in the following condition R
I

.

L(off2)

Beca us e I

s(OFF)

has to be higher than V

OUT

<(V

PU

may si gn ifi c a ntly increase if V
high (up t o several mA ), the pul l-up resi stor R
be conne cted t o a su pp ly t ha t is swit ch ed OFF when t h e

module is in standby.
The values of V

OLmin

, V

OLmax

and I

are available in

L(off2)

the Electrical Characteri stics sec ti on.

V batt. VPU

CC

V

PU

R

L(off2)

I

; this

OLmax

PU–VOLma x

is pulled

out

should

PU

)/

STATUS

+

-

OL

V

GROUND

OUT

R

L

R

6/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1

Test Pulse

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω
3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω
3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

ISO T/R 7637/1

Test Pulse

1CCCC

2CCCC
3aCCCC
3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All functions of the device are performed as de signed after exposure to disturbance.

E One or more f unctions of the device is not performed as d esigned af ter expos ure to disturbance

and cann ot be returned to proper operat ion without replacing the device.

I II III IV D el ay s and

I II III IV

TEST LEVELS

TEST LEVELS R ESULTS

Impedance

Ω

Ω

7/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Figur e 1: Waveforms

NORMAL OPERATION

INPUT
LOAD VOLTAGE
STATUS

UNDERVOLTAGE

V

CC

INPUT

LOAD VOLTAGE
STATUS

V

CC

INPUT
LOAD VOLTAGE
STATUS

V

V

CC<VOV

USD

OVERVOLTAGE

V

USDhyst

undefined

VCC>V

OV

INPUT

LOAD VOLTAGE
STATUS

INPUT

LOAD VOLTAGE

STATUS

T

j

INPUT
LOAD CURRENT

STATUS

OPEN LOAD wi th external pull-up

V

OUT>VOL

V

OL

OPEN LOAD without external pull-up

T
T

TSD
R

OVERTEMPERATURE

8/34

APPLICATION SCHEMATIC

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

+5V

µ

R

C

R

prot

prot

+5V

STA T US

INPUT

GND PROTECTION NETWORK AGAINST
REVERSE BATTERY

Soluti on 1: Resistor in the ground line (R
can be us ed with any type of load .

The fo llowin g is an indicati on on how to dimen sion the

resistor.

R

GND

1) R

2) R

where -I
be foun d in the absolute m aximum rating se ction of the of

≤ 600mV / (I

GND

≥ (−VCC) / (-I

GND

is the DC re vers e grou nd pi n cu rren t an d can

GND

S(on)ma x

)

GND

).

the devic e’s datasheet.
Power Dissipation in R

battery situations) is:

= (-VCC)2/R

P

D

GND

(when VCC<0: during reverse

GND

This resistor can be shared amongst several different
HSD. Please note that th e va l u e of this re sistor should be
calcul ated with form ula (1) wher e I
sum of the maximum on-state currents of the different

S(on)max

devices.
Please note that if the microprocessor ground is not

common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary

S(on)max

* R

) in the input thresholds

GND

depending on many devices are ON in the case of several
high side drivers sharing the same R

GND

If the calculated power dissipation leads to a large resistor
or several devices hav e to share the sa me resisto r then
the ST suggest to uti lize Solution 2 (see be low).

Solution 2:
A resistor (R

D

GND

A diode (D

=1kΩ) sh ould b e insert ed in paral lel to

GND

if the device will be driving an inductive load.

) in the gr ound line .

GND

only). This

GND

becomes t he

GND

.

will

V

CC

D

OUTPUT

GND

R

V

GND

GND

D

GND

This small signal diode can be s afely shared amongst
several different HSD. Also in this case, the presence of

j

the ground network wi ll produce a shift (

600mV) in t he
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating. The
same applies if the devic e will be subject to transients on
the VCC line that are grea ter tha n the ones sh own in the
ISO T/R 7637/1 table.

C I/Os PROTECTION:

µ

If a ground protection network is used and negative
transient are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
in lin e to prevent the µC I/Os pins to latch-up.

The value of these resistors is a compromise between the
leakage c urrent of µC an d the current required by the
HSD I/Os ( Input le vels comp atibilit y) wi th the lat ch-up li mit
of µC I/Os.

≤ R

-V

CCpeak/Ilatchup

Calculation exam ple:

CCpeak

prot

= - 100V an d I

≤ 65kΩ.

prot

For V
5kΩ ≤ R
Recommended R

≤ (V

prot

OHµC-VIH-VGND

≥ 20 mA; V

latchup

value is 10kΩ.

) / I

OHµC

ld

IHmax

≥ 4.5V

prot

)

9/34

1

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Off State Output Current

IL(off1) (µ A)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5
0

-50 -25 0 25 50 75 100 125 150 175

Off state
Vcc=36V

Vin=Vout=0V

Tc (ºC)

Input Clamp Voltage

Vicl (V)

8

7.8

7.6

7.4

7.2

7

6.8

6.6

6.4

6.2
6

Iin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

High Level Input Current

Iih (uA)

5

4.5

3.5

2.5

1.5

0.5

Vin=3.25V

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150 175

Input High Level

Vih (V)

3.6

3.4

3.2

3

2.8

2.6

2.4

2.2

2

-50 -25 0 25 50 75 100 125 150 175

Input Hysteresis VoltageInput Low Level

Tc (°C)

Tc (°C)

Vil (V)

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

10/34

Vhyst (V)

1.5

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

-50 -25 0 25 50 75 100 125 1 50 175

Tc (°C)

Overvoltage Shutdown

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

I

Vs T

LIM

case

Vov (V)

50

48

46

44

42

40

38

36

34

32
30

-50 -25 0 25 50 75 100 125 150 175

Ilim (A)

25

22.5

20

17.5

15

12.5

10

7.5

5

2.5
0

Vcc=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Turn-on Voltage Slope Turn-off Voltage Slope

dVout/dt(on) (V/ms)

1000

900

800

700

600

500

400

300

200

100

Vcc=13V

Rl=4.3Ohm

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

dVout/dt(off) (V/ms)

1000

900

800

700

600

500

400

300

200

100

Vcc=13V

Rl=4.3Ohm

0

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Tc (ºC)

On State Resistance Vs T

case

Ron (mOhm)

100

90

80

70

60

50

40

30

20

10

0

-50 -25 0 25 50 75 100 125 150 175

Iout=3A

Vcc=8V; 13V; 36V

Tc (ºC)

1

On State Resistance Vs V

CC

Ron (mOhm)

100

90

80

70

60

50

40

30

20

10

0

5 10152025303540

Tc= 150ºC

Tc= 25ºC

Tc= - 40ºC

Vcc (V)

11/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Status Clamp Voltage

Vscl (V)

8

7.8

7.6

7.4

7.2

6.8

6.6

6.4

6.2

Istat=1mA

7

6

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Status Low Output Voltage

Vstat (V)

0.8

0.7

Istat=1.6mA

0.6

0.5

0.4

0.3

0.2

0.1

0

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Open Load On State Detection Threshold

Status Leakage Current

Ilstat (uA)

0.05

0.04

Vstat=5V

0.03

0.02

0.01

0

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Open Load Off State Voltage Detection Threshold

Vol (V)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

Vin=0V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Iol (mA)

200
190
180
170
160
150
140
130
120
110
100

90
80

Vcc=13V

Vin=5V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

12/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PowerSO-10, P2PAK, PENTAWATT Maximum turn off current versus load inductance

LMAX (A)

I

100

10

1

0.1 1 10 100

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

Jstart

=150ºC

Jstart

Jstart

=100ºC

=125ºC

(at beginning of each demagnetization) of every pulse must not exceed

jstart

A

B
C

L(mH)

VIN, I

L

Demagnetization

Demagnetization

Demagnetization

t

13/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PPAK Maximum turn off current versus load inductance

LMAX (A)

I

100

A

10

1

0.1 1 10 10 0

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

Jstart

=150ºC

Jstart

Jstart

=100ºC

=125ºC

(at beginning of each demagnetization) of every pulse must not exceed

jstart

B

C

L(mH )

VIN, I

14/34

L

Demagnetization

Demagnetization

Demagnetization

t

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

SO-16L Maximum turn off current versus load inductance

LMAX (A)

I

100

A

B

10

C

1

0.1 1 10 100

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

Jstart

=150ºC

Jstart

Jstart

=100ºC

=125ºC

(at beginning of each demagnetization) of every pulse must not exceed

jstart

L(mH)

VIN, I

L

Demagnetization

Demagnetization

Demagnetization

t

15/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

SO-16L THERMAL DATA

SO-16L PC Board

R

thj-amb

Layout condition of Rth and Zth measur ements (PCB FR4 area= 41mm x 48mm, PCB thickness=2mm ,
Cu thickness=35µm, Copper areas: 0.5cm

Vs PCB copper area in open box free air condition

RTH j-amb (°C/W)

70

2

, 6cm2).

65

60

55

50

45

16/34

40

01234567

PCB Cu heatsink area ( cm ^ 2)

P2PAK PC Board

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

P2PAK THERMAL DATA

R

thj-amb

Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thi ckness=2 m m ,
Cu thickness=35µm, Copper areas: 0.97cm

Vs PCB copper area in open box free air condition

RTHj_amb (°C/W)

2

, 8cm2).

55

Tj-Tamb=50°C

50

45

40

35

30

0246810

PCB Cu heatsink area (cm^2)

17/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PPAK THERMAL DATA

PPAK PC Board

R

thj-amb

Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thi ckness=2 m m ,
Cu thickness=35µm, Copper areas: 0.44cm

Vs PCB copper area in open box free air condition

RTHj_amb

(ºC/W)

2

, 8cm2).

90
80
70
60
50

40
30
20

18/34

10

0

0246810

PCB Cu heatsink are a (cm^2)

PowerSO-10™ PC Board

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PowerSO-10™ THERMAL DATA

R

thj-amb

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thi ckness=2 m m ,
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm

Vs PCB copper area in open box free air condition

2

).

RTHj_amb (°C/W)

55

Tj-Tamb=50°C

50

45

40

35

30

0246810

PCB Cu heatsink area (cm^2)

19/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PowerSO-10 Thermal Impedance Junction Ambient Single Pulse

ZT H (°C/W)

100

10

1

0.1

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000
Tim e (s)

Thermal fitting model of a single channel HSD
in PowerSO-10

Pulse calculation formula

Z

THδ

where

R

δ tpT⁄=

TH

δ Z

THtp

2

0.5 cm

2

6 cm

1 δ–()+⋅=

Tj

20/34

C1

R1 R2

Pd

Thermal Parameter

Area/island (cm2)0.56

R1 (°C/W) 0.04

C2

C3

R3

T_amb

C4

C5

R4

R5

C6

R6

R2 (°C/W) 0.25
R3( °C/W) 0.25
R4 (°C/W) 0.8
R5 (°C/W) 12
R6 (°C/W) 37 22
C1 (W.s/°C) 0.0008
C2 (W.s/°C) 7.00E-03
C3 (W.s/°C) 0.015
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.75
C6 (W.s/°C) 3 5

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

P2PAK Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

1000

100

10

1

0.1

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Thermal fitting model of a single channel HSD
in P2PAK

Pulse calculation formula

Z

THδ

where

R

δ tpT⁄=

TH

δ Z

THtp

2

0.97 cm

2

6 cm

1 δ–()+⋅=

Tj

Pd

C1

R1 R2

Thermal Parameter

Area/island (cm2)0.976

R1 (°C/W) 0.04

C2

C3

R3

T_amb

C4

C5

R4

R5

C6

R6

R2 (°C/W) 0.25
R3( °C/W) 0.3
R4 (°C/W) 4
R5 (°C/W) 9
R6 (°C/W) 37 22
C1 (W.s/°C) 0.0008
C2 (W.s/°C) 0.007
C3 (W.s/°C) 0.015
C4 (W.s/°C) 0.4
C5 (W.s/°C) 2
C6 (W.s/°C) 3 5

21/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PPAK Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

1000

100

10

1

0.1

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Thermal fitting model of a single channel HSD
in PPAK

Pulse calculation formula

Z

THδ

where

R

δ tpT⁄=

TH

δ Z

THtp

2

0.44 cm

2

6 cm

1 δ–()+⋅=

Tj

22/34

C1

R1 R2

Pd

Thermal Parameter

Area/island (cm2)0.446

R1 (°C/W) 0.04

C2

C3

R3

T_amb

C4

C5

R4

R5

C6

R6

R2 (°C/W) 0.25
R3( °C/W) 0.3
R4 (°C/W) 2
R5 (°C/W) 15
R6 (°C/W) 61 24
C1 (W.s/°C) 0.0008
C2 (W.s/°C) 0.007
C3 (W.s/°C) 0.02
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.45
C6 (W.s/°C) 0.8 5

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

SO-16L Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/ W )

1000

100

10

1

0.1

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Thermal fitting model of a single channel HSD
in SO-16L

Tj

C1

R1 R2

Pd

C2

C3

R3

T_amb

C4

C5

R4

R5

C6

R6

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Thermal Parameter

Area/island (cm2)0.56

R1 (°C/W) 0.04
R2 (°C/W) 0.25
R3( °C/W) 2.2
R4 (°C/W) 12
R5 (°C/W) 15
R6 (°C/W) 37 22
C1 (W.s/°C) 0.0008
C2 (W.s/°C) 7.00E-03
C3 (W.s/°C) 1.50E-02
C4 (W.s/°C) 0.14
C5 (W.s/°C) 1
C6 (W.s/°C) 3 5

2

0.5 cm

2

6 cm

1 δ–()+⋅=

23/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PowerSO-10™ MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

A 3.35 3.65 0.132 0.144

A (*) 3.4 3.6 0.134 0.142

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

B (*) 0.37 0.53 0.014 0.021

C 0.35 0.55 0.013 0.022

C (*) 0.23 0.32 0.009 0.0126

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374

E2 7.20 7.60 0.283 300

E2 (*) 7.30 7.50 0.287 0.295

E4 5.90 6.10 0.232 0.240

E4 (*) 5.90 6.30 0.232 0.248

e 1.27 0.050
F 1.25 1.35 0.049 0.053

F (*) 1.20 1.40 0.047 0.055

H 13.80 14.40 0.543 0.567

H (*) 13.85 14.35 0.545 0.565

h 0.50 0.002
L 1.20 1.80 0.047 0.070

L (*) 0.80 1.10 0.031 0.043

α 0º 8º 0º 8º

α (*) 2º 8º 2º 8º

(*) Muar only POA P013P

24/34

HE

h

A

F

A1

10

1

eB

0.25

D

= =

D1

= =

E2

DETAIL "A"

DETAIL "A"

B

0.10 A

E

SEATING

PLANE

A

C

α

B

E4

SEATING
PLANE

A1

L

P095A

11

1

1

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PENTAWATT (VERTICAL) MECHANICAL DAT A

DIM.

A 4.8 0.189
C1.370.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M4.5 0.177

M1 4 0.157

Diam. 3.65 3.85 0.144 0.152

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

25/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

P2PAK MECHANICAL DATA

DIM.

A4.30 4.80
A1 2.40 2.80
A2 0.03 0.23

b0.80 1.05

c0.45 0.60

c2 1.17 1.37

D8.95 9.35
D2 8.00

E 10.00 10.40
E1 8.50

e3.20 3.60
e1 6.60 7.00

L 13.70 14.50
L2 1.25 1.40
L3 0.90 1.70
L5 1.55 2.40

R
V2 0º 8º

Package We ight 1.40 Gr (typ)

MIN. TYP MAX.

mm.

0.40

26/34

P010R

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

SO-16L MECHANICAL DATA

DIM.

A 2.65 0.104
a1 0.1 0.2 0.004 0.008
a2 2.45 0.096

b 0.35 0.49 0.014 0.019

b1 0.23 0.32 0.009 0.012

C 0.5 0.020

c1 45° (typ.)

D 10.1 10.5 0.397 0.413

E 10.0 10.65 0.39 3 0.419

e 1.27 0.050

e3 8.89 0.350

F 7.4 7 .6 0.291 0.300

L 0.5 1.27 0.020 0.050

M 0.75 0.029

S8° (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

27/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PPAK MECHANICAL DATA

DIM. MIN. TYP MAX.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23

B 0.40 0.60
B2 5.20 5.40

C 0.45 0.60
C2 0.48 0.60
D1 5.1

D 6.00 6.20

E 6.40 6.60
E1 4.7

e1.27

G 4.90 5.25
G1 2.38 2.70

H 9.35 10.10

L2 0.8 1.00
L4 0.60 1.00

R0.2
V2 0º 8º

Packag e Weight Gr. 0.3

28/34

P032T1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PowerSO-10™ SUGGESTED PAD LAYOUT

14.6 - 14.9

10.8 - 11

6.30

0.67 - 0.73
1
2
3

9.5
4

5

10

0.54 - 0.6

9
8
7

1.27

6

TAPE AND REEL SHIPMENT (suffix “13TR”)

TUBE SHIPMENT (no suffix)

C

A

B

A

All dimensi ons ar e in mm.

Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1)

Casablanca 50 1000 532 10.4 16.4 0.8

Muar 50 1000 532 4.9 17.2 0.8

MUARCASABLANCA

B

REEL DIMENSIONS

Base Q.ty 600
Bulk Q.ty 600
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30.4

C

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 24
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartm ent Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

All dimensions are in mm.

Empty components pockets
saled with cover tape.

User direction of feed

500mm min

Start

No componentsNo components Components

29/34

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PENTAWATT TUBE SHIPMENT (no suffix)

Base Q.ty 50
Bulk Q.ty 1000

B

C

A

Tube length (± 0.5) 532

A 18
B 33.1
C (± 0.1) 1

All dimensions are in mm.

30/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

2

P

PAK TUBE SHIPMENT (no suffix)

Base Q.ty 50
Bulk Q.ty 1000

B

C

Tube length (± 0.5) 532

A 18
B 33.1
C (± 0.1) 1

A

TAPE AND REEL SHIPMENT (suffix “13TR”)

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) S tandard 481 rev. A, F e b 1986

Tape width W 24
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 16
Hole Diameter D (± 0.1/-0 ) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 11.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 24.4
N (min) 60
T (max) 30.4

All dimensions are in mm.

All dimensions are in mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

31/34

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

SO-16L TUBE SHIPMENT (no suffix)

Base Q.ty 50
Bulk Q.ty 1000

C

A

B

TAPE AND REEL SHIPMENT (suffix “13TR”)

Tube length (± 0.5) 532
A 3.5
B 13.8
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) S tandard 481 rev. A, F e b 1986

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 12
Hole Diameter D (± 0.1/-0 ) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

32/34

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

PPAK TUBE SHIP MENT (no suffix)

A

C

B

TAPE AND REEL SHIPMENT (suffix “13TR”)

Base Q.ty 75
Bulk Q.ty 3000
Tube length (± 0.5) 532

A 6
B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) S tandard 481 rev. A, F e b 1986

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0 ) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

All dimensions are in mm.

No componentsNo components Components

Empty components pockets
saled with cover tape.

User direction of feed

500mm min

Start

33/34

1

VN820 / VN820SO / VN820SP / VN820-B5 / VN820PT

Information furnished is believed to be accurate and reliable. Howev er, STMicroelectronics assumes no responsibility for the co nsequences
of use of such inf ormation nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications m entioned in this publication are
subject to c hange without notice. This publication sup er s edes and replaces all informati on previously supplied. STMic r oelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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34/34