SGS Thomson Microelectronics TMMDB3TG Datasheet

®

FEATURES

VBO: 32V

■

Low breakover current: 15µA max

■

Breakover voltage range: 30 to 34V

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DESCRIPTION

Functioningasatriggerdiodewithafixed voltage
reference, the TMMDB3TG can be used in con­junction with triacs for simplified gate control cir­cuits or as a starting element in fluorescent lamp
ballasts.

TMMDB3TG

DIAC

MINIMELF

ABSOLUTE MAXIMUM RATINGS (limiting values)

Symbol Parameter Value Unit

I

TRM

Repetitive peak on-state current

2A

tp=20µs F= 120 Hz

Tstg

Tj

Storage temperature range
Operating junction temperature range

-40to+125 °C

January 2001 - Ed: 2

1/4

TMMDB3TG

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Symbol Parameter Test Conditions Value Unit

V

BO

IV

BO1-VBO2

∆ V Dynamic breakover

V

O

I

BO

tr Rise time * see diagram 3 MAX. 2 µs

I

R

* Applicable to both forward and reverse directions.
** Connected in parallel to the device.

ORDERING INFORMATION

Breakover voltage * C = 22nF ** MIN. 30 V

I Breakover voltage

symmetry

voltage *
Output voltage * see diagram 2

Breakover current * C = 22nF ** MAX. 15 µA

Leakage current * VR= 0.5 VBOmax MAX. 10 µA

TMM DB 3 TG

TYP. 32

MAX. 34

C = 22nF ** MAX. ± 2 V

V

BO

10mA

(R=20Ω)

and VFat

MIN. 9 V

MIN. 5 V

MINIMELF

Special V rangeBO

Diac Series

Breakover voltage
3:V typ = 32V

BO

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing Mode

TMMDB3TG (None)

2/4

0.04 g 2500 Tape & Reel