SGS Thomson Microelectronics TMMDB3 Datasheet
®
FEATURES
VBO: 32V
■
Breakover voltage range: 28 to 36V
■
DESCRIPTION
Functioningasatriggerdiodewithafixed voltage
reference, the TMMDB3 can be used in conjunction with triacs for simplified gate control circuits
or as a starting element in fluorescent lamp ballasts.
TMMDB3
DIAC
MINIMELF
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
I
TRM
Repetitive peak on-state current
2A
tp=20µs F= 120 Hz
Tstg
Tj
Storage temperature range
Operating junction temperature range
-40to+125 °C
March 2001 - Ed: 3A
1/4
TMMDB3
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Symbol Parameter Test Conditions Value Unit
V
BO
IV
BO1-VBO2
∆ V Dynamic breakover
V
O
I
BO
tr Rise time * see diagram 3 MAX. 2 µs
I
R
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
ORDERING INFORMATION
Breakover voltage * C = 22nF ** MIN. 28 V
I Breakover voltage
symmetry
voltage *
Output voltage * see diagram 2
Breakover current * C = 22nF ** MAX. 50 µA
Leakage current * VR= 0.5 VBOmax MAX. 10 µA
TYP. 32
MAX. 36
C = 22nF ** MAX. ± 3 V
V
BO
10mA
(R=20Ω)
and VFat
MIN. 5 V
MIN. 5 V
TMM DB 3
MINIMELF
Diac Series
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing Mode
TMMDB3 (None)
0.04 g 2500 Tape & Reel
Breakover voltage
3:V typ = 32V
BO
2/4
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