SGS Thomson Microelectronics TMMBAT48FILM Datasheet
®
TMMBAT 47
TMMBAT 48
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol Parameter TMMBAT47 TMMBAT48 Unit
V
RRM
Repetitive Peak Reverse Voltage 20 40 V
I
F
Forward Continuous Current
T
l
= 25
°
C
350 mA
I
FRM
Repetitive Peak Fordward Current tp ≤ 1s
δ ≤
0.5
1A
I
FSM
Surge non Repetitive Forward Current tp = 10ms 7.5 A
t
p
= 1s 1.5
P
tot
Power Dissipation
T
l
= 25 °C
330 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to 150
- 65 to 125
°
C
°
C
T
L
Maximum Temperature for Soldering during 15s 260
°
C
ABSOLUTE RATINGS
(limiting values)
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
C/W
THERMAL RESIS TANCE
1/5
* Pulse test: t
p
≤
300µs δ < 2%
.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°CI
R
= 10µA
TMMBA T47 20 V
T
j
= 25°CI
R
= 25µA
TMMBA T48 40
V
F
*
T
j
= 25°C
I
F
= 0.1mA All Types 0.25 V
T
j
= 25°C
I
F
= 1mA 0.3
T
j
= 25°C
I
F
= 10mA 0.4
T
j
= 25°C
I
F
= 30mA TMMBAT47 0.5
T
j
= 25°C
I
F
= 150mA 0.8
T
j
= 25°C
I
F
= 300mA 1
T
j
= 25°C
I
F
= 50mA TMMBAT48 0.5
T
j
= 25°C
I
F
= 200mA 0.75
T
j
= 25°C
I
F
= 500mA 0.9
I
R
*
T
j
= 25°C
V
R
= 1.5V All Types 1
µ
A
T
j
= 60°C
10
T
j
= 25°C
V
R
= 10V TMMBAT47 4
T
j
= 60°C
20
T
j
= 25°C
V
R
= 20V 10
T
j
= 60°C
30
T
j
= 25°C
V
R
= 10V TMMBAT48 2
T
j
= 60°C
15
T
j
= 25°C
V
R
= 20V 5
T
j
= 60°C
25
T
j
= 25°C
V
R
= 40V 25
T
j
= 60°C
50
STATIC CHARACTERISTICS
ELECTRICAL CHARACT E RISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
j
= 25°CV
R
= 0V
f = 1MHz 20 pF
T
j
= 25°CV
R
= 1V
12
t
rr
Tj = 25°C IF = 10mA VR = 1V irr = 1mA RL = 100
Ω
10 ns
DYNAMIC CHARACTERISTIC S
2/5
TMMBAT 47/TMMBAT 48
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