SGS Thomson Microelectronics TMMBAT48, TMMBAT47 Datasheet
TMMBAT 47
®
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
(limiting values)
TMMBAT 48
MINIMELF
(Glass)
Symbol Parameter TMMBAT47 TMMBAT48 Unit
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Repetitive Peak Reverse Voltage 20 40 V
Forward Continuous Current
Repetitive Peak Fordward Current tp ≤ 1s
Surge non Repetitive Forward Current tp = 10ms 7.5 A
Power Dissipation
Storage and Junction Temperature Range - 65 to 150
Maximum Temperature for Soldering during 15s 260
= 25
T
δ ≤
t
T
C
°
l
0.5
= 1s 1.5
p
= 25 °C
l
350 mA
1A
330 mW
- 65 to 125
THERMAL RESIS TANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
°
°
C/W
°
C
C
C
August 1999 Ed: 1A
1/5
TMMBAT 47/TMMBAT 48
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
*
F
I
*
R
Tj = 25°CI
T
= 25°CI
j
= 25°C
T
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
= 25°C
T
j
T
= 25°C
j
T
= 25°C
j
= 25°C
T
j
T
= 60°C
j
T
= 25°C
j
= 60°C
T
j
T
= 25°C
j
T
= 60°C
j
T
= 25°C
j
T
= 60°C
j
T
= 25°C
j
= 60°C
T
j
T
= 25°C
j
T
= 60°C
j
= 10µA
R
= 25µA
R
I
= 0.1mA All Types 0.25 V
F
I
= 1mA 0.3
F
I
= 10mA 0.4
F
I
= 30mA TMMBAT47 0.5
F
I
= 150mA 0.8
F
I
= 300mA 1
F
I
= 50mA TMMBAT48 0.5
F
I
= 200mA 0.75
F
I
= 500mA 0.9
F
V
= 1.5V All Types 1
R
V
= 10V TMMBAT47 4
R
V
= 20V 10
R
V
= 10V TMMBAT48 2
R
V
= 20V 5
R
V
= 40V 25
R
TMMBA T47 20 V
TMMBA T48 40
10
20
30
15
25
50
A
µ
DYNAMIC CHARACTERISTIC S
Symbol Test Conditions Min. Typ. Max. Unit
C
t
rr
* Pulse test: t
2/5
= 25°CV
T
j
T
= 25°CV
j
= 0V
R
= 1V
R
Tj = 25°C IF = 10mA VR = 1V irr = 1mA RL = 100
300µs δ < 2%
≤
p
.
f = 1MHz 20 pF
12
Ω
10 ns
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