SGS Thomson Microelectronics TMMBAT46FILM Datasheet
®
TMMBAT 46
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose, metal to silicon diode featuring
high breakdown voltage low turn-on voltage.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 100 V
I
F
Forward Continuous Current
T
l
= 25
°
C
150 mA
I
FRM
Repetitive Peak Fordware Current
t
p
≤ 1s
δ ≤
0.5
350 mA
I
FSM
Surge non Repetitive Forward Current tp = 10ms 750 mA
P
tot
Power Dissipation
T
l
= 80 °C
150 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to + 150
- 65 to + 125
°
C
°
C
T
L
Maximum Temperature for Soldering during 15s 260
°
C
ABSOLUTE RATINGS
(limiting values)
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
C/W
THERMAL RESIS TANCE
1/4
* Pulse tes t: t
p
≤
300µs δ < 2%
.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°CI
R
= 100µA
100 V
V
F
*
T
j
= 25°C
I
F
= 0.1mA 0.25 V
T
j
= 25°C
I
F
= 10mA 0.45
T
j
= 25°C
I
F
= 250mA 1
I
R
*
T
j
= 25°C
V
R
= 1.5V 0.5
µ
A
T
j
= 60°C
5
T
j
= 25°C
V
R
= 10V 0.8
T
j
= 60°C
7.5
T
j
= 25°C
V
R
= 50V 2
T
j
= 60°C
15
T
j
= 25°C
V
R
= 75V 5
T
j
= 60°C
20
ST ATIC CHARACTERISTICS
ELECTRICAL CHARACT ER ISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
j
= 25°CV
R
= 0V
f = 1MHz 10 pF
T
j
= 25°CV
R
= 1V
6
DYNAMIC CHARACT ER ISTI CS
2/4
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
TMMBAT 46
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