SGS Thomson Microelectronics TMMBAT46 Datasheet
®
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose, metal to silicon diode featuring
high breakdown voltage low turn-on voltage.
TMMBAT 46
MINIMELF
(Glass)
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 100 V
Forward Continuous Current
Repetitive Peak Fordware Current
T
l
t
≤ 1s
p
δ ≤
= 25
0.5
C
°
150 mA
350 mA
Surge non Repetitive Forward Current tp = 10ms 750 mA
Power Dissipation
= 80 °C
T
l
150 mW
Storage and Junction Temperature Range - 65 to + 150
j
- 65 to + 125
Maximum Temperature for Soldering during 15s 260
THERMAL RESIS TANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
°
°
C/W
°
C
C
C
August 1999 Ed: 1A
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TMMBAT 46
ELECTRICAL CHARACT ER ISTI CS
ST ATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
*
F
I
*
R
Tj = 25°CI
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
T
= 25°C
j
= 60°C
T
j
T
= 25°C
j
= 60°C
T
j
= 100µA
R
I
= 0.1mA 0.25 V
F
I
= 10mA 0.45
F
I
= 250mA 1
F
V
= 1.5V 0.5
R
V
= 10V 0.8
R
V
= 50V 2
R
V
= 75V 5
R
DYNAMIC CHARACT ER ISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
= 25°CV
j
T
= 25°CV
j
= 0V
R
= 1V
R
f = 1MHz 10 pF
100 V
5
7.5
15
20
6
A
µ
* Pulse tes t: t
300µs δ < 2%
≤
p
.
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
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