SGS Thomson Microelectronics TMMBAT43FILM, TMMBAT42FILM Datasheet
®
TMMBAT 42
TMMBAT 43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 30 V
I
F
Forward Continuous Current
T
l
= 25
°
C
200 mA
I
FRM
Repetitive Peak Fordware Current tp ≤ 1s
δ ≤
0.5
500 mA
I
FSM
Surge non Repetitive Forward Current tp = 10ms 4 A
P
tot
Power Dissipation
T
l
= 65 °C
200 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to 150
- 65 to 125
°
C
°
C
T
L
Maximum Temperature for Soldering during 15s 260
°
C
ABSOLUTE RATINGS
(limiting values)
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
C/W
THERMAL RESIS TANCE
1/4
* Pulse t est: t
p
≤
300µs δ < 2%
.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°CI
R
= 100µA
30 V
V
F
*
T
j
= 25°C
I
F
= 200mA All Types 1 V
T
j
= 25°C
I
F
= 10mA BAT 42 0.4
T
j
= 25°C
I
F
= 50mA 0.65
T
j
= 25°C
I
F
= 2mA BAT 43 0.26 0.33
T
j
= 25°C
I
F
= 15mA 0.45
I
R
*
T
j
= 25°C
V
R
= 25V 0.5
µ
A
T
j
= 100°C
100
STATIC CHARACTERISTICS
ELECTRICAL CHARACT E RISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
j
= 25°CVR = 1V f = 1MHz
7pF
trr
Tj = 25°CI
F
= 10mA IR = 10mA i
rr
= 1mA RL = 100
Ω
5ns
η
T
j
= 25°CRL = 15KΩCL = 300pF f = 45MHz Vi = 2V
80 %
DYNAMIC CHARACT ERIS TICS
2/4
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
TMMBAT 42/TMMBAT 43
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