SGS Thomson Microelectronics TMMBAT43, TMMBAT42 Datasheet
TMMBAT 42
®
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
(limiting values)
TMMBAT 43
MINIMELF
(Glass)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 30 V
Forward Continuous Current
Repetitive Peak Fordware Current tp ≤ 1s
Surge non Repetitive Forward Current tp = 10ms 4 A
Power Dissipation
Storage and Junction Temperature Range - 65 to 150
j
Maximum Temperature for Soldering during 15s 260
= 25
T
l
δ ≤
= 65 °C
T
l
0.5
C
°
200 mA
500 mA
200 mW
- 65 to 125
THERMAL RESIS TANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
°
°
C/W
°
C
C
C
August 1999 Ed: 1A
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TMMBAT 42/TMMBAT 43
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
*
V
F
I
*
R
Tj = 25°CI
= 25°C
T
j
= 25°C
T
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
= 25°C
T
j
T
= 100°C
j
= 100µA
R
I
= 200mA All Types 1 V
F
I
= 10mA BAT 42 0.4
F
I
= 50mA 0.65
F
I
= 2mA BAT 43 0.26 0.33
F
I
= 15mA 0.45
F
V
= 25V 0.5
R
DYNAMIC CHARACT ERIS TICS
Symbol Test Conditions Min. Typ. Max. Unit
C
trr
η
= 25°CVR = 1V f = 1MHz
T
j
Tj = 25°CI
= 25°CRL = 15KΩCL = 300pF f = 45MHz Vi = 2V
T
j
= 10mA IR = 10mA i
F
= 1mA RL = 100
rr
30 V
7pF
Ω
80 %
100
5ns
A
µ
* Pulse t est: t
300µs δ < 2%
≤
p
.
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
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