SGS Thomson Microelectronics TMMBAT41FILM Datasheet
®
TMMBAT 41
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 100 V
I
F
Forward Continuous Current
T
i
= 25 °C
100 mA
I
FRM
Repetitive Peak Forward Current tp ≤ 1s
δ ≤
0.5
350 mA
I
FSM
Surge non Repetitive Forward Current tp = 10ms 750 mA
P
tot
Power Dissipation
T
i
= 95 °C
100 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to + 150
- 65 to + 125
°
C
°
C
T
L
Maximum Temperature for Soldering during 15s 260
°
C
ABSOLUTE RATINGS
(limiting values)
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
C/W
THERMAL RESIS TANCE
* Pulse test: t
p
≤
300µs δ < 2%
.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°CI
R
= 100µA
100 V
V
F
*
T
j
= 25°CI
F
= 1mA
0.4 0.45 V
T
j
= 25°C IF = 200mA
1
I
R
*
T
j
= 25°C
V
R
= 50V 0.1
µ
A
T
j
= 100°C
20
STATIC CHARACTERISTICS
ELECTRICAL CHARACT E RISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
j
= 25°CV
R
= 1V f = 1MHz
2pF
DYNAMIC CHARACTERI STICS
1/4
2/4
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Rever se current versus continuous
reverse voltage (typical values).
TMMBAT 41
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