SGS Thomson Microelectronics TMMBAT41 Datasheet
®
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.
TMMBAT 41
MINIMELF
(Glass)
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 100 V
Forward Continuous Current
= 25 °C
T
i
Repetitive Peak Forward Current tp ≤ 1s
0.5
δ ≤
100 mA
350 mA
Surge non Repetitive Forward Current tp = 10ms 750 mA
Power Dissipation
= 95 °C
T
i
100 mW
Storage and Junction Temperature Range - 65 to + 150
j
- 65 to + 125
Maximum Temperature for Soldering during 15s 260
THERMAL RESIS TANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
*
V
F
I
*
R
Tj = 25°CI
= 25°CI
T
j
T
= 25°C IF = 200mA
j
= 25°C
T
j
T
= 100°C
j
= 100µA
R
= 1mA
F
V
= 50V 0.1
R
100 V
0.4 0.45 V
1
20
°
°
°
C/W
°
µ
C
C
C
A
DYNAMIC CHARACTERI STICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* Pulse test: t
T
j
300µs δ < 2%
≤
p
August 1999 Ed: 1A
= 25°CV
.
= 1V f = 1MHz
R
2pF
1/4
TMMBAT 41
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Rever se current versus continuous
reverse voltage (typical values).
2/4
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