SGS Thomson Microelectronics TMBYV10-60 Datasheet
®
SMALL SIGNAL SCH OTTKY DIOD E
DESCRIPTION
Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high frequency circuits.
TMBYV 10-60
MELF
(Glass)
ABSOLUTE MAXIMUM RA TINGS
Symbol Parameter Value Unit
V
RRM
I
F (AV)
I
FSM
T
stg
T
T
L
Repetitive Peak Reverse Voltage 60 V
Average Forward Current
Surge non Repetitive Forward Current
Storage and Junction Temperature Range - 65 to + 150
j
Maximum Lead Temperature for Soldering during 15s 260
(limiting values)
= 25 °C
T
i
= 25 °C
T
i
= 10ms
t
p
= 25 °C
T
i
= 300µs
t
p
1A
20
Sinusoidal Pulse
40
Rectangular Pulse
- 65 to + 125
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j - l)
Junction-leads 110
C/W
°
A
C
°
C
°
C
°
August 1999 Ed: 1A
1/5
TMBYV 10-60
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
*
I
R
VF*I
I
* Pulse test: t
= 25°C
T
j
= 100°C
T
j
= 1A
F
= 3A 1
F
300µs δ < 2%
≤
p
.
V
R
= V
RRM
0.5
10
= 25°C
T
j
0.7
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
= 25°C VR = 0
T
j
T
= 25°C VR = 5V
j
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. S o r everse recovery
is not affected by s torage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from forward biased condition to reverse blocking state,
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit behaviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4).
150 pF
40
current is required to charge the depletion capacitance of the diode.
mA
V
2/5
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