SGS Thomson Microelectronics TMBAT49FILM Datasheet

®

TMBAT 49

SMALL SIGNAL SC HO TTKY DIODE

DESCRIPTION

General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.

This device has integrated protection against ex­cessive voltage such as electrostatic discharges.

August 1999 Ed 1A

MELF

(Glass)

Symbol Parameter Value Unit

V

RRM

Repetitive Peak Reverse Voltage 80 V

I

F

Forward Continuous Current

T

i

= 70 °C

500 mA

I

FRM

Repetitive Peak Forward Current

tp = 1s

δ ≤

0.5

3A

I

FSM

Surge non Repetitive Forward Current tp = 10ms 10 A

T

stg

T

j

Storage and Junction Temperature Range - 65 to + 150

- 65 to + 125

°

C

°

C

T

L

Maximum Temperature for Soldering during 15s 260

°

C

ABSOL UT E MAXIMUM RATINGS

(limiting values)

Symbol Test Conditions Value Unit

R

th(j-l)

Junction-leads 110

°

C/W

THERMAL RESISTANCE

* Pulse test: t

p

≤

300µs δ < 2%

.

Symbol Test Conditions Min. Typ. Max. Unit

I

R

*

T

j

= 25°CV

R

= 80V

200

µ

A

V

F

*

T

j

= 25°CI

F

= 10mA

0.32 V

T

j

= 25°CI

F

= 100mA

0.42

T

j

= 25°CI

F

= 1A

1

STATIC CHARACTERISTICS

ELECTRICAL CHARACT E RISTI CS

Symbol Test Conditions Min. Typ. Max. Unit

C

T

j

= 25°C f = 1MHz

V

R

= 0V 120 pF

V

R

= 5V 35

DYNAMIC CHARACTERI STICS

1/4

2/3

Figure 1. Forward current versus forward
voltage at low level (typical values).

Figure 2. Forward current versus forward
voltage at high level (typical values).

Figure 3. Reverse current versus junction
temperature.

Figure 4. Reverse current versus V

RRM

in per

cent.

TMBAT 49