SGS Thomson Microelectronics TMBAT49 Datasheet
®
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.
TMBAT 49
MELF
(Glass)
ABSOL UT E MAXIMUM RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F
I
FRM
I
FSM
T
stg
T
T
L
Repetitive Peak Reverse Voltage 80 V
Forward Continuous Current
Repetitive Peak Forward Current
= 70 °C
T
i
tp = 1s
0.5
δ ≤
500 mA
3A
Surge non Repetitive Forward Current tp = 10ms 10 A
Storage and Junction Temperature Range - 65 to + 150
j
- 65 to + 125
Maximum Temperature for Soldering during 15s 260
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 110
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
I
*
R
V
*
F
= 25°CV
T
j
= 25°CI
T
j
= 25°CI
T
j
T
= 25°CI
j
= 80V
R
= 10mA
F
= 100mA
F
= 1A
F
200
0.32 V
0.42
1
C/W
°
µ
C
°
C
°
C
°
A
DYNAMIC CHARACTERI STICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* Pulse test: t
T
j
300µs δ < 2%
≤
p
August 1999 Ed 1A
= 25°C f = 1MHz
.
V
= 0V 120 pF
R
V
= 5V 35
R
1/4
TMBAT 49
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
cent.
RRM
in per
2/3
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