Datasheet STB80PF55 Datasheet (SGS Thomson Microelectronics)

STB80PF55

P-CHANNEL 55V - 0.016 Ω - 80A D2PAK

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

V

DSS

STB80PF55 55 V < 0.018

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

(on) = 0.016 Ω

DS

R

DS(on)

I

D

80 A

Ω

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

APPLICATIONS

■ MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

3

1

D2PAK

TO-263

(Suffix “T4”)

ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(*) Drain Current (continuos) at T

I

D

I

D

(

I

DM

P

tot

dv/dt

E

AS

T

stg

T

j

(

Pulse widt h l i m i ted by safe op erating area

•)

(*) Curren t Lim i ted by Package

February 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

55 V
55 V

Gate- source Voltage ± 16 V

= 25°C

C

Drain Current (continuos) at TC = 100°C

•)

Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C

80 A
57 A

300 W

Derating Factor 2 W/°C

(1)

Peak Diode Recovery voltage slope 7 V/ns

(2)

Single Pulse Avalanche Energy 1.4 mJ
Storage Temperature
Max. Operating Junction Temperature

Note: F or t he P- CHAN NEL MOS FE T ac tu al po la rity o f v olt ages a nd
current has to be rever sed

≤ 40A, di/dt ≤ 300A/µs , VDD ≤ V

(1) I

SD

(2) Starting Tj = 25 oC, ID = 80A, VDD = 40V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX.

1/7

STB80PF55

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max
Max

Typ

0.5

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

55 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 16 V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS ID = 250 µA

DS

V

= 10 V ID = 40 A

GS

234V

0.016 0.018

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

> I

g

fs

C

iss

C

oss

C

rss

Forward Transconductance

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

V

DS

I

D

V

DS

= 40 A

x R

D(on)

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

32 S

5500
1130

600

µA
µA

Ω

pF
pF
pF

2/7

STB80PF55

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

g

Q

gs

Q

gd

(*)

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 25 V ID = 40 A

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

= 25 V ID = 80 A VGS= 10V

V

DD

35

190

190

27
65

258 nC

ns
ns

nC
nC

SWITCHING OFF

(*)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7 Ω V

G

GS

= 10 V

165

80

= 25 V ID = 40 A

(Resistive Load, Figure 3)

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

(*)

= 40 V ID = 80 A

V

clamp

R

= 4.7 Ω V

G

GS

= 10 V

(Inductive Load, Figure 5)

60
40
85

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulse width [ 300 µs, duty cycle 1.5 %.

(

•)

Pulse width limited by T

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

JMAX

I

= 80 A VGS = 0

SD

= 80 A di/dt = 100A/µs

I

SD

V

= 25 V Tj = 150°C

DD

(see test circuit, Figure 5)

80

320

1.3 V

110

495

9

ns
ns

ns
ns
ns

A
A

ns

nC

A

3/7

STB80PF55

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/7

D2PAK MECHANICAL DATA

STB80PF55

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.016

V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

5/7

STB80PF55

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

6/7

BASE QTY BULK QTY

1000 1000

STB80PF55

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ro nics.

The ST log o i s registered trademark of STMicroelectronics

2002 STMi croelectr oni cs - All Rights Reserved

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