SGS Thomson Microelectronics MSC1000M Datasheet
MSC1000M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.RUGGEDIZED VSWR
∞
:1
.INPUT MATCHING
.LOW THERMAL RESISTANCE
.CLASS A OPERATION
.P
DESCRIPTION
The MSC1000M is a Class A, common emitter
transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications.
This device is capable of withstanding a ∞:1 load
VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic wire bonding techniques ensure high reliability and product consistency.
The MSC1000M is housed in the IMPAC™ package with internal input matching.
= 0.6 W MIN. WITH 10.8 dB GAIN
OUT
ORDER CO DE
MSC1000M
PIN CONNECTION
1. Collector 3. Base
2. Emitter 4. Emitter
.280 2LFL (S058)
epoxy sealed
BRANDING
1000M
ABSOLUTE M AXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CE
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
October 1992
Power Dissipation* (See Safe Area) — W
Device Current* 300 mA
Collector-Emitter Bias Voltage* 20 V
Junction Temperature (Pulsed RF Operation) 200
Storage Temperature
Junction-Case Thermal Resistance* 35
case
= 25°C)
65 to +150
−
°
°
°
C/W
C
C
1/5
MSC1000M
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
CBO
EBO
CEO
CES
h
FE
IC = 1mA IE = 0mA 50 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 5mA IB = 0mA 20 — — V
VCE = 28V — — 1.0 mA
VCE = 5V IC = 100mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
G
P
Note: Pulse Widt h=10µSec IC = 120mA
f = 1025 — 1150 MHz PIN = 50 mW VCE = 18 V 0.6 0.85 — W
f = 1025 — 1150 MHz PIN = 50 mW VCE = 18 V 10.8 12.3 — dB
Duty Cycle=1%
TYPICAL PERFORMANCE
BROADBAND POWER AMPLIFIER
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
NARROWBAND POWER
OUTPUT vs FREQUENCY
Unit
Unit
2/5
MAXIMUM OPERATING AREA for
FORWARD BIAS OPERATION
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