BTA0 4 T/D /S/ A
BTB0 4 T/D /S/ A
March 1995
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
BTA Tc = 90°C4 A
BTB Tc = 95°C
I
TSM
Non repetitive surgepeak on-state current
( Tj initial = 25°C)
tp = 8.3 ms 42 A
tp = 10 ms 40
I2tI
2
t value tp = 10 ms 8 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 50mA diG/dt = 0.1A/µs
Repetitive
F = 50 Hz
10 A/µs
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 110
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
TO220AB
(Plastic)
A1
A2
G
.VERY LOWI
GT
=10mA max
.LOW I
H
= 15mA max
.BTA Family :
INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA / BTB04- Unit
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 110°C
400 600 700 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
1/5
GATE CHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA 3.3 °C/W
BTB 2.4
Symbol Test Conditions Quadrant Suffix Unit
TDSA
IGTVD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 5 5 10 10 mA
IV MAX 5 10 10 25
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=V
DRMIG
= 40mA
dIG/dt = 0.5A/µs
Tj=25°C I-II-III-IV TYP 2 µs
I
L
IG= 1.2 I
GT
Tj=25°C I-III-IV TYP 10 10 20 20 mA
II 20 20 40 40
IH*I
T
= 100mA gate open Tj=25°C MAX 15 15 25 25 mA
VTM*ITM= 5.5A tp= 380µs Tj=25°C MAX 1.65 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.75
dV/dt * Linear slope up to
VD=67%V
DRM
gate open
Tj=110°C TYP 10 10 - - V/µs
MIN - - 10 10
(dV/dt)c * (dI/dt)c = 1.8A/ms Tj=110°C TYP 1 1 5 5 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 40W (tp = 20 µs) IGM= 4A (tp = 20 µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA04 T/D/S/A / BTB04 T/D/S/A
2/5
Package I
T(RMS)
V
DRM/VRRM
Sensitivity Specification
AVTDSA
BTA
(Insulated)
4 400 X X X X
600 X X X X
700 X X X X
BTB
(Uninsulated)
400 X X X X
600 X X X X
700 X X X X
ORDERING INFORMATION
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current(F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
amb
and T
case
) for different thermal resistances heatsink +
contact (BTA).
Fig.4 : RMS on-state current versus case temperature.Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
amb
and T
case
) for different thermal resistances heatsink +
contact (BTB).
BTA04 T/D/S /A / BTB 04 T/D/S/A
3/5
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1
Zth/Rth
Zth( j-c)
Zth(j-a)
tp(s)
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
BTA04 T/D/S/A / BTB04 T/D/S/A
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190
I 3.55 4.00 0.140 0.158
J 1.15 1.39 0.045 0.055
L 0.35 0.65 0.013 0.026
M 2.10 2.70 0.082 0.107
N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038
I
==
A
G
D
B
C
F
P
N
O
M
L
J
H
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license isgranted by implication orotherwise under any patent or patent rightsof SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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BTA04 T/D/S /A / BTB 04 T/D/S/A
5/5
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