Datasheet TEA205D Datasheet (SGS-THOMSON)

DUAL OR BRIDGE CONNECTION MODES
FEWEXTERNAL COMPONENTS
SUPPLYVOLTAGEDOWN TO 3V
HIGHCHANNEL SEPARATION
VERYLOWSWITCHON/OFF NOISE
MAX GAIN OF 45dB WITH ADJUST EXTER-

NAL RESISTOR
SOFT CLIPPING
THERMAL PROTECTION

CC

< 15V

CC

= 6V, RL=4Ω

=9V, RL=4Ω

CC

=3V, RL=4Ω

CC

3V < V
P=2•1W, V
P=2•2.3W, V
P=2•0.1W, V

ABSOLUTE MAXIMUMRATINGS

TEA2025B
TEA2025D

STEREO AUDIO AMPLIFIER

POWERDIP12+2+2 SO20 (12+4+4)

ORDERING NUMBERS: TEA2025B (PDIP)

TEA2025D (SO)

DESCRIPTION

The TEA2025B/Dis a monolithic integrated circuit
in 12+2+2 Powerdip and 12+4+4 SO, intendedfor
use as dual or bridge power audio amplifier port­able radiocassette players.

Symbol Parameter Test Conditions Unit

V

S

Supply Voltage 15 V

I

Ouput Peak Current 1.5 A

O

T

J

Junction Temperature 150 °C

T

stg

Storage Temperature 150 °C

BLOCK DIAGRAM

OUT 1BOOT 1GNDGNDFEEDIN 1+GND(Sub)

THERMAL

PROTECT.

START

CIRCUIT

SVR

IN 2+

50Ω

10KΩ

-

+

DECOUPLING

­2

+

10KΩ

11

5KΩ

V

S+

BRIDGE

2

50Ω

June 1994

D94AU120

50Ω

FEED GND GND BOOT 2 OUT 2

1/9

TEA2025B- TEA2025D

POWERDIP 12+2+2 PIN CONNECTION (Topview)

BRIDGE

OUT.2

BOOT.2

GND
GND

FEEDBACK

IN.2 (+)

SVR

SO12+4+4 PINCONNECTION (Top view)

BRIDGE

OUT 2

1
2
3
4
5
6
7
8

1
2

20
19

16
15
14
13
12
11
10

+Vs
OUT.1
BOOT.1
GND
GND
FEEDBACK
IN.1 (+)

9

GND (sub.)

V

CC

OUT 1

BOOT 2

GND
GND
GND
GND

FEEDBACK

IN 2(+)

3
4
5
6
7
8
9 IN 1(+)

18
17
16
15
14
13
12

BOOT 1
GND
GND
GND
GND
FEEDBACK

SVR 10 GND(Sub)11

D94AU119

THERMAL DATA

Symbol Description SO 12+4+4 (*) PDIP 12+2+2 (**) Unit

R

th j-case

R

th j-amb

(*) The R
(**) The R

2/9

Thermal ResistanceJunction-case
Thermal ResistanceJunction-ambient

is measured with 4sqcm copper area heatsink

th j-amb

is measured on devices bonded on a10 x 5 x 0.15cm glass-epoxy substrate with a35µm thick copper surface of 5 cm

th j-amb

Max
Max

15
65

15
60

°C/W
°C/W

2

.

TEA2025B - TEA2025D

ELECTRICAL CHARACTERISTICS (T

=25°C, VCC= 9V,Stereo unless otherwise specified)

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Supply Voltage 3 12 V

V

S

Quiescent Current 35 50 mA

I

Q

Quiescent OutputVoltage 4.5 V

V

O

A

Voltage Gain

V

∆A

Voltage Gain Difference ±1dB

V

Input Impedance 30 KΩ

R

j

PO

Output Power(d = 10%) Stereo 8 (per channel) 9V

Stereo
Bridge

Bridge

d Distortion Vs =9V; R

SVR Supply VoltageRejection f = 100Hz, V

=0

R

E

) Input Noise Voltage

N(IN

R

G
G

=104Ω

CT Cross-Talk f = 1KHz, R

4Ω
8Ω

9V

4Ω

6V

8Ω

6V

16Ω

6V

32Ω

6V

4Ω

3V

32Ω

3V

8Ω

12V

8Ω

9V

4Ω

6V

8Ω

6V

16Ω

3V

32Ω

3V

=4Ω

L

= 0.5V, Rg=0 40 46 dB

R

= 10KΩ

g

Stereo
Bridge

43
49

1.7

45
51

2.3

47
53

1.3

0.7

1

0.6

0.25

0.13

0.1

0.02

2.4

4.7

2.8

1.5

0.18

0.06

0.3

1.5

0.5

1.5
3

40 52 dB

3
6

dB

W

W

%

mV

Term. N° (PDIP) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
DC VOLT (V) 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9

Figure 1: Bridge Application(Powerdip)

Figure2: StereoApplication (Powerdip)

C1

C10

C2

C1 1

C3

C4

C8

C5

C9

C6

C7

3/9

TEA2025B- TEA2025D

Figure3: SupplyCurrent vs. SupplyVoltage

=4Ω)

(R

L

I(mA)

50

40

30

20

STEREO

10

3 6 9 12 15

Vs(V)

Figure5: OutputPower vs. Supply Voltage

(THD = 10%, f = 1KHz)

Po(W)

3.5

Figure4: OutputVoltage vs. SupplyVoltage

Vo(V)

8
7
6
5
4
3
2
1
0

3691215

Vs(V)Vs(V)

STEREO

Figure6: THDversus Output Power

THD(%)

10

(f = 1KHz, V

= 6V)

S

3

2.5
Rl=4ohm

2

1.5

1

0.5

0

3691215

Rl=8ohm

Vs(V)

Rl=16ohm

STEREO

Rl=16ohm

Rl=8ohm

Rl=4 OHM

1

0.1

STEREO

0 0.2 0.4 0.6 0.8 1

Po(W)

4/9

TEA2025B - TEA2025D

APPLICATIONINFORMATION
InputCapacitor

Inputcapacitor is PNP type allowingsource to be
referencedto ground.

In this way no input coupling capacitoris required.
However, a series capacitor(0.22 uF)to the input
sidecan be useful incase of noise due to variable
resistor contact.

Bootstrap

The bootstrap connection allows to increase the
output swing.

The suggested value for the bootstrapcapacitors
(100uF) avoids a reduction of the output signal
alsoat low frequenciesand low supply voltages.

Voltage Gain Adjust

STEREOMODE
The voltage gain is determined by on-chip resis-

tors R1 and R2 together with the external RfC1
seriesconnected betweenpin 6 (11)and ground.

The frequency response is given approximated
by:

V

OUT

V

IN

=

Rf + R2 +

R1

1

JWC1

With Rf=0, C1=100 uF, the gain results 46 dB
with pole at f=32Hz.

THE purpose of Rf is to reduce the gain. It is rec­ommendedto notreduce it under 36 dB.

Thetotal gain of thebridge is givenby:

V

OUT

=

V

IN

andwith the suggestedvalues(C1 = C2 = 100 µF,

R1

Rf+R2 +

1

JWC1

(1+

R3
R4

R1

R2+R4+

1

JWC1

)

Rf=0) means:
Gv = 52 dB

Figure8

with first pole at f = 32 Hz

OutputCapacitors.

The low cut off frequency due to output capacitor
dependingon the load is given by:

2

ΠC

1

OUT•RL

F

=

L

BRIDGEMODE

Figure7

The bridge configuration is realized very easily
thanks to an internal voltage divider which pro­vides(at pin 1) the CH 1 outputsignal after reduc­tion. It is enough to connect pin 6 (invertinginput
of CH 2) witha capacitor to pin 1 and to connect
to ground the pin7.

with C

470µF and RL= 4 ohm it means FL=

OUT

80 Hz.

PopNoise

Most amplifiers similar to TEA 2025B need exter­nal resistors between DC outputs and ground in
order to optimize the pop on/off performance and
crossoverdistortion.

Figure9

The TEA 2025B solution allows to save compo­nents because of suchresistors(800 ohm)are in­cludedinto the chip.

5/9

TEA2025B- TEA2025D

Stability

A good layout is recommended in order to avoid
oscillations.

Generally the designer must pay attention on the
followingpoints:

- Shortwires of componentsand short connec­tions.

- No groundloops.

- Bypass of supplyvoltagewith capacitorsas
nearestas possible to the supply I.C.pin.The
low value(poliester)capacitorsmust have
good temperatureand frequencycharac­teristics.

- No sockets.

2)the heatsink can have a smaller factorof safety
compared with that of a conventional circuit.
There is no device damage in the case of ex­cessive junction temperature: all that happens
is that P

(and therefore P

O

) and Id are re-

tot

duced.

APPLICATIONSUGGESTION

The recommended values of the components are
those shown on stereo application circuit of
Fig. 2 different values can be used, the follow­ing table can help the designer.

COMPONENT

C1,C2 0.22µF INPUT DC

C3 100µF

C4,C5 100µF BOOTSTRAP
C6,C7 470µF

C8,C9 0.15µF

C10, C11 100µF

RECOMMENDED

VALUE

PURPOSE LARGER THAN SMALLER THAN

DECOUPLING IN
CASE OF SLIDER
CONTACT NOISE OF
VARIABLE
RESISTOR

RIPPLE REJECTON

OUTPUT DC
DECOUPLING

FREQUENCY
STABILITY

INVERTING INPUT
DC DECOUPLING

DEGRADATION OF
SVR, INCREASE OF
THD AT LOW
FREQUENCY AND
LOW VOLTAGE

INCREASE OF LOW
FREQUENCY CUT­OFF

DANGER OF
OSCILLATIONS

INCREASE OF LOW
FREQUENCY CUT­OFF

6/9

SO20PACKAGE MECHANICAL DATA

TEA2025B - TEA2025D

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104
a1 0.1 0.3 0.004 0.012
a2 2.45 0.096

b 0.35 0.49 0.014 0.019
b1 0.23 0.32 0.009 0.013

C 0.5 0.020

c1 45 (typ.)

D 12.6 13.0 0.496 0.512

E 10 10.65 0.394 0.419

e 1.27 0.050
e3 11.43 0.450

F 7.4 7.6 0.291 0.299

L 0.5 1.27 0.020 0.050

M 0.75 0.030

S 8 (max.)

mm inch

7/9

TEA2025B- TEA2025D

DIP16 PACKAGE MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055

b 0.50 0.020
b1 0.38 0.50 0.015 0.020

D 20.0 0.787

E 8.80 0.346

e 2.54 0.100
e3 17.78 0.700

F 7.10 0.280

I 5.10 0.201
L 3.30 0.130
Z 1.27 0.050

mm inch

8/9

TEA2025B - TEA2025D

Information furnished is believedto be accurate and reliable. However,SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such informationnor for any infringement of patents or otherrights of third parties which may resultfrom itsuse. No
license is granted by implication or otherwise under any patent or patentrights of SGS-THOMSON Microelectronics. Specifications men­tioned in this publication are subject to change without notice. This publication supersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without ex­press writtenapproval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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Spain - Sweden - Switzerland - Taiwan - Thaliand- United Kingdom - U.S.A.

9/9

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