Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CMOS IC
4-bit Microcontroller
with Built-in EPROM and LCD Drivers
Ordering number:ENN3410C
LC58E68
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Overview
The LC58E68 is a 4-bit microcontroller with built-in 16
Kbytes of EPROM, 1 Kbit of RAM and LCD drivers. It
can perform most of the functions of the LC586X series
single-chip microcontroller, making it ideal for prototyping
systems based on these devices.
The LC58E68 features an additional 224 bytes of EPROM
containing the configuration option data. Configuration
options include input and output configurations and osillator
selection. Input configuration are LOW-level hold transistor, HIGH-level hold transistor and no hold transistor enabled, and pull-up and pull-down input transistors. Output
configuration options are LCD driver and CMOS, p-channel open-drain and n-channel open-drain general-purpose
outputs.The osillator options are ceramic filter, crystal, and
both ceramic filter and crystal.
The LC58E68’s UV-erasable EPROM can be reprogrammed using a general-purpose PROM programmer and
an adapter board.
The LC58E68 operates from a 3 or 5 V supply and is available in 80-pin QIPs.
Features
• Compatible with the LC586X series mask ROM devices
• 16-Kbyte program EPROM
• 224-byte configuration EPROM
• 1-Kbit RAM
• LCD drivers
• 3 or 5 V supply
• 80-pin QIP
Pin Assignment
Top view
O2501TN(KT)/11795TH (ID)/7142JN No.3410–1/16
Block Diagram
LB58E68
No.3410–2/16
Pin Function
rebmuNe maN noitcnuF
12 M O C
21 M O C
31 PU C
42 PU C
5S ERt upniteserH GIH-evitcA
6E O/TNI tupni)EO(elbanetuptuo M O RPE dna)TNI(tseuqertpurretnidexelpitluM
78 0A/1O S
89 0A/2O S
90 1A/3O S
011 1A/4O S
112 1A/1A
213 1A/2A
314 1A/3A
41E C/4A
514 D/1P
615 D/2P
716 D/3P
817 D/4P
91T U OTX
02N ITX
12V
22V
32VSSdnuorG
42V
52N IFC
62T U OFC
720 0A/1S
821 0A/2S
922 0A/3S
033 0A/4S
130 D/1K
231 D/2K
332 D/3K
433 D/4K
534 0A/1M
635 0A/2M
736 0A/3M
837 0A/4M
931 N
042 N
143 N
244 N
34P PV/TSTV M O RPE dna)TST(tupnitsetdexelpitluM
87 ot445 3GES ot1G ESs tuptuoesorup-larenegrosrevirdtnemges D CL
974 M O C
083 M O C
LB58E68
stuptuonom m oc D CL
snoitcennocroticapactiucricsaibevird D CL
)11A
)7D ot4D(senilsubatad M O RPE dna)4P ot1P(Ptroptuptuo/tupnitib-4dexelpitluM
snoitcennocrotallicsolatsyrC
2
D D
1
D D
D D
ylppusegatloV
)4M dna3M(stupnikcolc
stuptuonom m oc D CL
noitcennocroticapacylppussaibevird D CL
snoitcennocrotallicsoretlifcimareC
)30A ot00A(stupnisserdda M O RPE dna)4S ot1S(Stroptupnitib-4dexelpitluM
)3D ot0D(senilsubatad M O RPE dna)4K ot1K(Ktroptuptuo/tupnitib-4dexelpitluM
)4N(tuptuolangis mrala dna)4N ot1N(Ntroptuptuoniardnepo,tib-4dexelpitluM
PP
)PPV(ylppus
ot8OA(stupnisserdda M O RPE dna)3O S otOS(troplaires,)4O S ot1O S(OStroptuptuo/tupnitib-4dexelpitluM
)EC(tupnielbanepihcdna)41A ot21A(stupnisserdda M O RPE,)4A ot1A(Atroptuptuo/tupnitib-4dexelpitluM
lanretxe 2dna1remitdna)70A ot40A(stupnisserdda M O RPE,)4M ot1M( Mtroptuptuo/tupnitib-4 dexelpitluM
No.3410–3/16
Specifications
Absolute Maximum Ratings
retemaraPl obmySs noitidnoCs gnitaRt inU
egatlovylppuSV
1 egatlovylppus D CLV
2 egatlovylppus D CLV
egnaregatlovtupniNIFC dna NITXV
egnaregatlovtupniTST
egnar
egnartnerructuptuo N stroPI
egnartnerructuptuolatot53
noitapissidrewopelbawollAx a m dP 005W m
erutarepmetgnitarepOr poT 04 ot01° C
erutarepmetegarotSg tsT 521+ ot55–° C
LB58E68
xam 0.6+ ot3.0–V
D D
1D D
2D D
1I
dna TNI,SER dna,A dna O S,P,K,SstroP
egnaregatlovtuptuoTU OFC dna TU OTXV
egnaregatlovtuptuoniard-nepo N stroPV
egnartnerructuptuo A dna O S,M,P,K stroPI
V
2I
1O
1GES,2PUC,1P UC dna,A dna O S,P,K stroP
egatlovtuptuo4M O C ot1M O C dna53 G ES ot
V
2O
3O
1O
2O
G ES ot1GES dna,N dna A,O S,M ,P,K stroP
∑ I
O
V ot3.0–
V
D D
V ot3.0–
V
D D
egatlovdetareneg m umixam ot0V
V ot3.0–
3.0 +V
D D
egatlovdetareneg m umixam ot0V
V ot3.0–
3.0 +V
D D
31+ ot3.0–V
51+ ot01–A m
5+ ot5–A m
07+ ot07–A m
Allowable Operating Ratings at Ta = 25˚C
retemaraPl obmySs noitidnoCs gnitaRt inU
delbasid D CLhtiw egnaregatlovylppuSV
saibcitatshtiw egnaregatlovylppuSV
saib-2/1htiw egnaregatlovylppuSV
saib-3/1htiw egnaregatlovylppuSV
egatlovnoitneteratad m uminiMV
D D
D D
D D
D D
R D
1 etoneeS 5.5 ot8.2V
1 etoneeS 5.5 ot8.2V
2 etoneeS 5.5 ot8.2V
3 etoneeS 5.5 ot8.2V
4 etoneeSo t8.2VD DV
Notes
1. V
DD1=VDD2=VDD
2. V
DD1=VDD2
3. V
DD1
≈1/2 ×V
≈2/3 ×V DD, V
DD
DD2
≈ 1/3× V
DD
4. Oscillator and all internal circuits halted
Electrical Characteristics at Ta = 25˚C, VDD=2.8 to 3.2V
retemaraPl obmySs noitidnoC
V
D D
f
1 egatlovylppus D CLV
2 egatlovylppus D CLV
tnerrucylppuSI
tnerrucegakaelylppuSI
-woltupniTNIdna,A dna O S,M,P,K,S stroP
egatlovlevel
egatlovlevel
D D
D D
V
1LI
-hgihtupniTNIdna,A dna O S,M ,P,K,S stroP
V
1HI
1D D
2D D
latx
V
D D
f
latx
V
D D
f
latx
V
D D
V
D D
Zck52= Ω .4erugifeeS.saib-3/1,edomtlah,
V
D D
V
D D
V
D D
f,V3=
f,V3=
f,V3=
f,V3=
sgnitaR
nimp ytx am
,saib-2/1,Fµ1.0=2C=1C,V3=
.2erugifeeS.zHk867.23=
,saib-3/1,Fµ1.0=2C=1C,V3=
.3erugifeeS.zHk867.23=
,saib-3/1,Fµ1.0=2C=1C,V3=
.3erugifeeS.zHk867.23=
C,zHk23=
latx
latx
rec
rec
C,zHk004=
.5erugifeeS.edom tlah
C,zH M1=
.6erugifeeS.edom tlah
g
gcC=dc
gcC=dc
Z,Fp02=
k52= Ω ,
c
.4erugifeeS.saib-3/1,edomtlah
C,zHk56ro 83=
,Fp01=
g
,Fp033=
,Fp001=
.1erugifeeS.edom ybdnats,V3=1 A µ
03 .0VD DV
V7.0
D D
5.1
0.1
0.2V
5
01
051
002
V
D D
tinU
V
Aµ
V
Continued on next page
No.3410–4/16
Continued from preceding page
retemaraPl obmySs noitidnoC
egatlov
egatlov
tnerruc
egatlovlevel-woltuptuo NtroPV
tnerrucegakaeltuptuo NtroPI
egatlov
egatlov
tnerruc
egatlov
tnerruc
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
ecnatsisertupnirotsisnart
ecnatsisertupnirotsisnart
ecnatsisertupni
ecnatsisertupni
LB58E68
egatlovlevel-woltupniNIFC dna SERV
egatlovlevel-hgihtupniNIFC dna SERV
level-woltuptuo A dna OS,M,P,K stroP
level-hgihtuptuo A dna OS,M,P,K stroP
egakaeltupniTNIdna,A dna O S,M ,K,SstroP
egatlovlevel-woltuptuo S O M C 53GES ot1G ESV
level-hgihtuptuo SO M C 53GES ot1G ES
level-hgihtuptuolennahc-p53GES ot1G ES
egakaeltuptuolennahc-p53G ES ot1GES
level-woltuptuolennahc-n53G ES ot1GES
egakaeltuptuolennahc-n53G ES ot1GES
level-woltuptuo53GES ot1G ES saib-citatS
level-hgihtuptuo 53G ES ot1GESsaib-citatS
egatlovlevel-woltuptuo1M O C saib-citatSV
egatlovlevel-hgihtuptuo1M O C saib-citatSV
level-woltuptuo53GES ot1G ES saib-2/1
level-hgihtuptuo 53G ES ot1GESsaib-2/1
level-woltuptuo4M O C ot1M O C saib-2/1
level-dimtuptuo4M O C ot1M O C saib-2/1
level-hgihtuptuo 4M O C ot1M O C saib-2/1
level-woltuptuo53GES ot1G ES saib-3/1
level-dimtuptuo53GES ot1G ES saib-3/1
level-hgihtuptuo 53G ES ot1GESsaib-3/1
level-woltuptuo4M O C ot1M O C saib-3/1
level-dimtuptuo4M O C ot1M O C saib-3/1
level-hgihtuptuo 4M O C ot1M O C saib-3/1
dlohlevel-wolA dna O S,M ,P,K,S stroP
dlohlevel-hgih A dna O S,M ,P,K,S stroP
rotsisnartpu-llup A dna O S,M,P,K,S stroP
rotsisnartnwod-llup A dna O S,M,P,K,S stroP
ecnatsisertupnirotsisnartdlohlevel-wolTNIR
ecnatsisertupnirotsisnartdlohlevel-hgihTNIR
2LI
2HI
V
V
I
V
V
I
V
I
V
V
V
V
V
V
V
V
V
V
V
V
V
R
R
R
R
I
2LO
I
1H O
VD DV3=
1kael
I
1LO
V
2kael
I
3LO
I
2H O
I
3H O
VLOV0= 1A µ
3kael
I
4LO
VH OV=
4kael
I
5LO
I
4H O
I
6LO
I
5H O
I
7LO
I
6H O
I
8LO
I
1M O
I
7H O
I
9LO
I
2M O
I
I
8H O
I
01LO
I
3M O
I
I
9H O
VIV2.0=
1LI
VIV8.0=
1HI
VIV=
1UP
VIV=
1DP
VIV2.0=
2LI
VIV8.0=
2HI
Aµ004=2 .05 .0V
LO
Aµ004–=V
H O
VIV=
SS
VIV=
D D
A m01= 5.0V
LO
V5.01= 1A µ
H O
Aµ001= 5.0V
LO
Aµ001–=V
H O
Aµ001–=V
H O
Aµ001= 5.0V
LO
D D
Aµ02= 2.0V
LO
Aµ02–=V
H O
Aµ001= 2.0V
LO
Aµ001–=V
H O
Aµ02= 2.0V
LO
Aµ02–=V
H O
Aµ001= 2.0V
LO
LO
H O
LO
LO
LO
H O
LO
LO
LO
H O
Iro Aµ001=
Aµ001–=V
Aµ02= 2.0V
Iro Aµ02=
H O
Iro Aµ02=
H O
Aµ02–=V
Aµ001= 2.0V
Iro Aµ001=
Iro Aµ001=
Aµ001–=V
D D
D D
SS
D D
D D
D D
Aµ001–=
H O
Aµ02–=
Aµ02–=
Aµ001–=
H O
Aµ001–=
H O
sgnitaR
nimp ytx am
05 2.0VD DV
V57.0
D D
5.0–VD D2.0–V
D D
1–
5.0–V
D D
5.0–V
D D
2.0–V
D D
2.0–V
D D
2.0–V
D D
V(
)2/
D D
2.0–
2.0–V
D D
V(
)3/
D D
2.0–
V3/2(
)
D D
2.0–
2.0–V
D D
V(
)3/
D D
2.0–
V3/2(
)
D D
2.0–
2.0–V
D D
060 030 021kΩ
060 030 021kΩ
030 510 05kΩ
030 510 05kΩ
060 030 021kΩ
060 030 021kΩ
V
D D
V(
D D
V(
D D
V3/2(
V(
D D
V3/2(
1
1A µ
)2/
2.0+
)3/
2.0+
)
D D
2.0+
)3/
2.0+
)
D D
2.0+
tinU
V
Aµ
V
V
V
V
V
Continued on next page
No.3410–5/16