Sanyo LC58E68 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
CMOS IC
4-bit Microcontroller
with Built-in EPROM and LCD Drivers
Ordering number:ENN3410C
LC58E68
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Overview
The LC58E68 is a 4-bit microcontroller with built-in 16 Kbytes of EPROM, 1 Kbit of RAM and LCD drivers. It can perform most of the functions of the LC586X series single-chip microcontroller, making it ideal for prototyping systems based on these devices. The LC58E68 features an additional 224 bytes of EPROM containing the configuration option data. Configuration options include input and output configurations and osillator selection. Input configuration are LOW-level hold transis­tor, HIGH-level hold transistor and no hold transistor en­abled, and pull-up and pull-down input transistors. Output configuration options are LCD driver and CMOS, p-chan­nel open-drain and n-channel open-drain general-purpose outputs.The osillator options are ceramic filter, crystal, and both ceramic filter and crystal. The LC58E68’s UV-erasable EPROM can be repro­grammed using a general-purpose PROM programmer and an adapter board. The LC58E68 operates from a 3 or 5 V supply and is avail­able in 80-pin QIPs.
Features
• Compatible with the LC586X series mask ROM devices
• 16-Kbyte program EPROM
• 224-byte configuration EPROM
• 1-Kbit RAM
• LCD drivers
• 3 or 5 V supply
• 80-pin QIP
Pin Assignment
Top view
O2501TN(KT)/11795TH (ID)/7142JN No.3410–1/16
Block Diagram
LB58E68
No.3410–2/16
Pin Function
rebmuNemaN noitcnuF 12MOC 21MOC 31PUC 42PUC 5SERtupniteserHGIH-evitcA 6EO/TNI tupni)EO(elbanetuptuoMORPEdna)TNI(tseuqertpurretnidexelpitluM 780A/1OS 890A/2OS 901A/3OS
0111A/4OS 1121A/1A 2131A/2A 3141A/3A 41EC/4A 514D/1P 615D/2P 716D/3P 817D/4P 91TUOTX 02NITX 12V 22V 32VSSdnuorG 42V 52NIFC 62TUOFC 7200A/1S 8210A/2S 9220A/3S 0330A/4S 130D/1K 231D/2K 332D/3K 433D/4K 5340A/1M 6350A/2M 7360A/3M 8370A/4M 931N 042N 143N 244N 34PPV/TSTVMORPEdna)TST(tupnitsetdexelpitluM
87ot4453GESot1GESstuptuoesorup-larenegrosrevirdtnemgesDCL 974MOC 083MOC
LB58E68
stuptuonommocDCL
snoitcennocroticapactiucricsaibevirdDCL
)11A
)7Dot4D(senilsubatadMORPEdna)4Pot1P(Ptroptuptuo/tupnitib-4dexelpitluM
snoitcennocrotallicsolatsyrC
2
DD
1
DD
DD
ylppusegatloV
)4Mdna3M(stupnikcolc
stuptuonommocDCL
noitcennocroticapacylppussaibevirdDCL
snoitcennocrotallicsoretlifcimareC
)30Aot00A(stupnisserddaMORPEdna)4Sot1S(Stroptupnitib-4dexelpitluM
)3Dot0D(senilsubatadMORPEdna)4Kot1K(Ktroptuptuo/tupnitib-4dexelpitluM
)4N(tuptuolangismraladna)4Not1N(Ntroptuptuoniardnepo,tib-4dexelpitluM
PP
)PPV(ylppus
ot8OA(stupnisserddaMORPEdna)3OSotOS(troplaires,)4OSot1OS(OStroptuptuo/tupnitib-4dexelpitluM
)EC(tupnielbanepihcdna)41Aot21A(stupnisserddaMORPE,)4Aot1A(Atroptuptuo/tupnitib-4dexelpitluM
lanretxe2dna1remitdna)70Aot40A(stupnisserddaMORPE,)4Mot1M(Mtroptuptuo/tupnitib-4dexelpitluM
No.3410–3/16
Specifications
Absolute Maximum Ratings
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppuSV
1egatlovylppusDCLV 2egatlovylppusDCLV
egnaregatlovtupniNIFCdnaNITXV
egnaregatlovtupniTST
egnar
egnartnerructuptuoNstroPI
egnartnerructuptuolatot53
noitapissidrewopelbawollAxamdP 005Wm
erutarepmetgnitarepOrpoT 04ot01°C
erutarepmetegarotSgtsT 521+ot55–°C
LB58E68
xam 0.6+ot3.0–V
DD
1DD 2DD
1I
dnaTNI,SERdna,AdnaOS,P,K,SstroP
egnaregatlovtuptuoTUOFCdnaTUOTXV
egnaregatlovtuptuoniard-nepoNstroPV
egnartnerructuptuoAdnaOS,M,P,KstroPI
V
2I
1O
1GES,2PUC,1PUCdna,AdnaOS,P,KstroP
egatlovtuptuo4MOCot1MOCdna53GESot
V
2O
3O 1O 2O
GESot1GESdna,NdnaA,OS,M,P,KstroP
I
O
Vot3.0–
V
DD
Vot3.0–
V
DD
egatlovdetarenegmumixamot0V
Vot3.0–
3.0+V
DD
egatlovdetarenegmumixamot0V
Vot3.0–
3.0+V
DD
31+ot3.0–V 51+ot01–Am 5+ot5–Am
07+ot07–Am
Allowable Operating Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
delbasidDCLhtiwegnaregatlovylppuSV
saibcitatshtiwegnaregatlovylppuSV saib-2/1htiwegnaregatlovylppuSV saib-3/1htiwegnaregatlovylppuSV
egatlovnoitneteratadmuminiMV
DD DD DD DD RD
1etoneeS 5.5ot8.2V 1etoneeS 5.5ot8.2V 2etoneeS 5.5ot8.2V 3etoneeS 5.5ot8.2V 4etoneeSot8.2VDDV
Notes
1. V
DD1=VDD2=VDD
2. V
DD1=VDD2
3. V
DD1
1/2×V
2/3×VDD, V
DD
DD2
1/3×V
DD
4. Oscillator and all internal circuits halted
Electrical Characteristics at Ta = 25˚C, VDD=2.8 to 3.2V
retemaraPlobmySsnoitidnoC
V
DD
f
1egatlovylppusDCLV
2egatlovylppusDCLV
tnerrucylppuSI
tnerrucegakaelylppuSI
-woltupniTNIdna,AdnaOS,M,P,K,SstroP
egatlovlevel
egatlovlevel
DD
DD
V
1LI
-hgihtupniTNIdna,AdnaOS,M,P,K,SstroP
V
1HI
1DD
2DD
latx
V
DD
f
latx
V
DD
f
latx
V
DD
V
DD
Zck52= .4erugifeeS.saib-3/1,edomtlah, V
DD
V
DD
V
DD
f,V3=
f,V3=
f,V3=
f,V3=
sgnitaR
nimpytxam
,saib-2/1,Fµ1.0=2C=1C,V3=
.2erugifeeS.zHk867.23=
,saib-3/1,Fµ1.0=2C=1C,V3=
.3erugifeeS.zHk867.23=
,saib-3/1,Fµ1.0=2C=1C,V3=
.3erugifeeS.zHk867.23=
C,zHk23=
latx
latx
rec
rec
C,zHk004=
.5erugifeeS.edomtlah
C,zHM1=
.6erugifeeS.edomtlah
g
gcC=dc
gcC=dc
Z,Fp02=
k52= ,
c
.4erugifeeS.saib-3/1,edomtlah
C,zHk56ro83=
,Fp01=
g
,Fp033=
,Fp001=
.1erugifeeS.edomybdnats,V3=1Aµ
03.0VDDV
V7.0
DD
5.1
0.1
0.2V
5
01
051
002
V
DD
tinU
V
V
Continued on next page
No.3410–4/16
Continued from preceding page
retemaraPlobmySsnoitidnoC
egatlov
egatlov
tnerruc
egatlovlevel-woltuptuoNtroPV
tnerrucegakaeltuptuoNtroPI
egatlov
egatlov
tnerruc
egatlov
tnerruc
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
egatlov
ecnatsisertupnirotsisnart
ecnatsisertupnirotsisnart
ecnatsisertupni
ecnatsisertupni
LB58E68
egatlovlevel-woltupniNIFCdnaSERV
egatlovlevel-hgihtupniNIFCdnaSERV
level-woltuptuoAdnaOS,M,P,KstroP
level-hgihtuptuoAdnaOS,M,P,KstroP
egakaeltupniTNIdna,AdnaOS,M,K,SstroP
egatlovlevel-woltuptuoSOMC53GESot1GESV
level-hgihtuptuoSOMC53GESot1GES
level-hgihtuptuolennahc-p53GESot1GES
egakaeltuptuolennahc-p53GESot1GES
level-woltuptuolennahc-n53GESot1GES
egakaeltuptuolennahc-n53GESot1GES
level-woltuptuo53GESot1GESsaib-citatS
level-hgihtuptuo53GESot1GESsaib-citatS
egatlovlevel-woltuptuo1MOCsaib-citatSV
egatlovlevel-hgihtuptuo1MOCsaib-citatSV
level-woltuptuo53GESot1GESsaib-2/1
level-hgihtuptuo53GESot1GESsaib-2/1
level-woltuptuo4MOCot1MOCsaib-2/1
level-dimtuptuo4MOCot1MOCsaib-2/1
level-hgihtuptuo4MOCot1MOCsaib-2/1
level-woltuptuo53GESot1GESsaib-3/1
level-dimtuptuo53GESot1GESsaib-3/1
level-hgihtuptuo53GESot1GESsaib-3/1
level-woltuptuo4MOCot1MOCsaib-3/1
level-dimtuptuo4MOCot1MOCsaib-3/1
level-hgihtuptuo4MOCot1MOCsaib-3/1
dlohlevel-wolAdnaOS,M,P,K,SstroP
dlohlevel-hgihAdnaOS,M,P,K,SstroP
rotsisnartpu-llupAdnaOS,M,P,K,SstroP
rotsisnartnwod-llupAdnaOS,M,P,K,SstroP
ecnatsisertupnirotsisnartdlohlevel-wolTNIR
ecnatsisertupnirotsisnartdlohlevel-hgihTNIR
2LI
2HI
V
V
I
V
V
I
V
I
V
V
V
V
V
V
V
V
V
V
V
V
V
R
R
R
R
I
2LO
I
1HO
VDDV3=
1kael
I
1LO
V
2kael
I
3LO
I
2HO
I
3HO
VLOV0= 1Aµ
3kael
I
4LO
VHOV=
4kael
I
5LO
I
4HO
I
6LO
I
5HO
I
7LO
I
6HO
I
8LO
I
1MO
I
7HO
I
9LO
I
2MO
I
I
8HO
I
01LO
I
3MO
I
I
9HO
VIV2.0=
1LI
VIV8.0=
1HI
VIV=
1UP
VIV=
1DP
VIV2.0=
2LI
VIV8.0=
2HI
Aµ004=2.05.0V
LO
Aµ004–=V
HO
VIV=
SS
VIV=
DD
Am01= 5.0V
LO
V5.01= 1Aµ
HO
Aµ001= 5.0V
LO
Aµ001–=V
HO
Aµ001–=V
HO
Aµ001= 5.0V
LO
DD
Aµ02= 2.0V
LO
Aµ02–=V
HO
Aµ001= 2.0V
LO
Aµ001–=V
HO
Aµ02= 2.0V
LO
Aµ02–=V
HO
Aµ001= 2.0V
LO
LO
HO
LO
LO
LO
HO
LO
LO
LO
HO
IroAµ001=
Aµ001–=V
Aµ02= 2.0V
IroAµ02=
HO
IroAµ02=
HO
Aµ02–=V
Aµ001= 2.0V
IroAµ001=
IroAµ001=
Aµ001–=V
DD
DD
SS
DD
DD DD
Aµ001–=
HO
Aµ02–=
Aµ02–=
Aµ001–=
HO
Aµ001–=
HO
sgnitaR
nimpytxam
052.0VDDV
V57.0
DD
5.0–VDD2.0–V
DD
1–
5.0–V
DD
5.0–V
DD
2.0–V
DD
2.0–V
DD
2.0–V
DD
V(
)2/
DD
2.0–
2.0–V
DD
V(
)3/
DD
2.0–
V3/2(
)
DD
2.0–
2.0–V
DD
V(
)3/
DD
2.0–
V3/2(
)
DD
2.0–
2.0–V
DD
060030021k
060030021k
03051005k
03051005k 060030021k
060030021k
V
DD
V(
DD
V(
DD
V3/2(
V(
DD
V3/2(
1
1Aµ
)2/
2.0+
)3/
2.0+ )
DD
2.0+
)3/
2.0+ )
DD
2.0+
tinU
V
V
V
V
V
V
Continued on next page
No.3410–5/16
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