Sanyo DSH05 Specifications

Ordering number : ENN7034
DSH05
Diffused Type Silicon Diode
DSH05
0.5A Power Rectifier
Features
Facilitates automatic mounting and miniaturization in end products.
Peak reverse voltage : V
Average rectified current : I
Specifications
RM
=0.5A.
O
Package Dimensions
unit : mm
1312
[DSH05]
Cathode mark
0.6
2.6
3.6
0.15max
1.6
0 to 0.1
1.1
SANYO : DSH05
Absolute Maximum Ratings at T a=25°C
Peak Reverse Voltage V Average Rectified Current I
Surge Forward Current I Junction T emperature Tj 150 °C
Storage T emperature T stg --40 to +150 °C
Parameter Symbol Conditions Ratings Unit
RM
50Hz sine wave, Ta=25°C 0.38 A
O
Load resistor, Tl=107°C 0.5 A
FSM
50Hz sine wave non-repetitive, 1cycle peak value
400 V
8A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Forward Voltage V Reverse Current I
Thremal Resistance
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
min typ max
IF=0.5A 1.1 V
F
VR=V
R
θi-l Junction-Lead 70 °C/W
θi-a glass epoxy substrate mounted. 300 °C/W
RM
Junction-Ambient,
(Soblering land 11mm, both sides)
Ratings
Unit
10 µA
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73001 GI IM
No.7034-1/3
DSH05
I
-- V
F
5
F
0.6
I
O
-- Ta
3 2
-- ASurge Forward Current, I
1.0
F
7 5
3 2
Forward Current, I
0.1 7
5
0.9
-- W
0.8
F
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Average Forward Power Dissipation, P
0
0
9
25°C
Ta=150°C
0.4 0.80
Forward Voltage, V
PF -- I
half sine wave
D. C
0.2 0.4 0.6 0.8
Average Forward Current, I
I
FSM
O
-- s
F
-- V
O
-- A
0.5
-- A O
0.4
0.3
0.2
0.1
Average Forward Current, I
0.8
0
0
Ambient Temperature, Ta -- °C
D. C
2.01.2 1.6
IT03644 IT03645
D. C
half sine wave
I
-- Tl
O
-- A O
0.6
half sine wave
0.4
0.2
Average Forward Current, I
0
IT03646
0 15025 50 75 100 125
Lead Temperature, Tl -- °C
IT03647
15025 50 75 100 125
-- A
FSM
8
7
6
5
4
3
2
1
0.02s
0
2
357 2 2357
I
FSM
0.1
50Hz
Time, s
1.0
IT03648
No.7034-2/3
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