SANYO 2SC5415 Technical data

2SC5415

Ordering number:ENN5911

NPN Epitaxial Planar Silicon Transistor

2SC5415

High-Frequency

Low-Noise Amplifier Applications

Features

·High gain : S21e 2=9dB typ (f=1GHz).

·High cutoff frequency :Tf=6.7GHz typ.

Package Dimensions

unit:mm

2038A

Specifications

Absolute Maximum Ratings at Ta = 25˚C

[2SC5415]

4.5

	1.6			1.5
			2.5	4.25max
0.4		0.5	1.0
3 1.5	2		1	0.4
	3.0			1 : Base
0.75				2 : Collector

3 : Emitter

SANYO : PCP

(Bottom view)

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		20	V
Collector-to-Emitter Voltage	VCEO		12	V
Emitter-to-Base Voltage	VEBO		2	V
Collector Current	IC		100	mA
Collector Dissipation	PC	Mounted on a ceramic board (250mm2× 0.8mm)	800	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol				Conditions			Ratings		Unit
							min	typ	max
Collector Cutoff Current	ICBO			VCB=10V, IE=0					1.0	µA
Emitter Cutoff Current	IEBO			VEB=1V, IC=0					10	µA
DC Current Gain	hFE1			VCE=5V, IC=30mA			90*		270*
	hFE2			VCE=5V, IC=70mA			70
Gain-Bandwidth Product	fT			VCE=5V, IC=30mA			5	6.7		GHz
Output Capacitance	Cob			VCB=5V, f=1MHz				1.2	1.8	pF
Reverse Transfer Capacitance	Cre			VCB=5V, f=1MHz				0.65		pF
Forward Transfer Gain	| S21e |2			VCE=5V, IC=30mA, f=1GHz			7.5	9		dB
Noise Figure	NF			VCE=5V, IC=7mA, f=1GHz				1.1	2.0	dB
* The 2SC5415 is classified by 30mA hFE as follows :
			90	E 180	135 F 270
Marking : EA
hFE rank : E, F

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

30300TS (KOTO) TA-1022 No.5911–1/6

2SC5415

	50															IC					- VCE
															0.35mA
mA																																	0.30mA
	40
–																																			0.25mA
C	30																																		0.20mA
I
Current,																																					0.15mA
Collector	20
																																						0.10mA
	10
																																							0.05mA
	00																																							IB = 0
						2											4								6										8										10
							Collector-to-Emitter Voltage, VCE																												–			V
	7															hFE						-			IC
	5
FE	3
	2
h																														VCE =5V
Gain,
	100																																2V
Current	5
DC	7
	3
	2
	10
	3		5			7 1.0				2				3			5			7		10			2			3			5				7 100								2		3
											Collector Current, IC																	–			mA
	10															Cob						-			VCB
																																						f = 1MHz
	7
pF	5
–	3
Cob
	2
Capacitance,	1.0
	7
Output	5
	3
	2
	0.1
	7		0.1			2				3				5		7	1.0							2	3						5			7	10								2		3
							Collector-to-Base Voltage, VCB																											--			V
	10															NF					- IC
																																						f = 1GHz
dB	8
–
NF	6
Figure,Noise
	4																																VCE =2V
	2																																											5V
	07
			1.0			2				3						5					7	10						2						3			5						7		100
											Collector Current, IC																	–			mA

	100														IC					- VBE
mA	80
–																								VCE =5V
C																																			2V
I	60
Current,
	40
Collector
	20
	0
	0					0.2						0.4									0.6					0.8										1.0							1.2
								Base-to-Emitter Voltage, VBE																										–		V
	10															fT					- IC
GHz
	7																												VCE					=5V
–
T
	5																											2V
f
Product,	3
Bandwidth-Gain
	2
	1.0
						2			3			5				7										2							3			5					7
	1.0																				10																						100
										Collector Current, IC																– mA
	10													Cre							- VCB
pF	7																																						f = 1MHz
–	5
Cre
	3
Capacitance,
	2
	1.0
Transfer	7
	5
Reverse	3
	2
	0.1
	7		0.1			2			3			5			7	1.0					2				3	5							7			10					2		3
							Collector-to-Base Voltage, VCB --																														V
	12												S21e 2 -- IC
dB																																							f = 1GHz
	10																									VCE =5V
–
2
S21e	8
																															2V
Gain,	6
Transfer	4
Forward
	2
	0
	7		1.0			2			3						5					7	10					2							3			5					7		100
										Collector Current, IC																– mA

No.5911–2/6