Page 1
Po wer Transistors
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.75±0.1
123
0.93±0.1
2.5±0.1
0.8max
1.0±0.2
7.3±0.1
1.8±0.1
2.3±0.1
0.5±0.1
0.5±0.1
0.1±0.05
1.0±0.1
6.5±0.2
2.3
5.35
4.35
13.3±0.3
2.3±0.1
5.5±0.26.0
1.8
0.75
0.6
3
2.3
21
0.5±0.1
2SC5457
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio h
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
500
500
400
7
6
3
1.2
30
1.0
150
–55 to +150
FE
Unit
V
V
V
V
A
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
=25˚C)
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
Conditions
min
400
10
8
typ10max
100
100
40
1.0
1.5
1.0
3.0
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC5457
PC— Ta Area of safe operation (ASO)
50
(1)
(2)
(3)
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(P
=4.5W)
C
(3) Without heat sink
=1.0W)
(P
C
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
100
30
)
10
A
I
(
CP
C
I
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
10ms
Non repetitive pulse
=25˚C
T
C
1ms
DC
Collector to emitter voltage VCE (V
t=100µs
)
2
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