Datasheet 2SC5344 Datasheet (Paco)

Page 1
ST 2SC5344
NPN Silicon Epitaxial Planar Transistor
Audio power amplifier applications.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol Value Unit
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Collector Base Volt age V Collector Emitter Volt age V Emitter Base Volt age V
35 V
CBO
30 V
CEO
5 V
EBO
Collector Current IC 800 mA
Collector Dissipation P
625 mW
tot
Junction Temperature Tj 150 OC Storage Temperature Range T
- 55 to + 150
stg
O
C
Characteristics at Ta = 25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain at V
= 1 V, IC = 100 mA Current Gain Group O
CE
Collector Base Cutoff Current at V
= 35 V
CB
Emitter Base Cutoff Current at V
EB
= 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at I
= 10 mA
C
Emitter Base Breakdown Voltage at IE = 10 µA
Collector-Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA
Transition Frequency at V
= 5 V, IC = 10 mA
CE
Collector Output Capacitance at V
= 10 V, f = 1 MHz
CB
Y
hFE hFE
I
- - 0.1 µA
CBO
I
- - 0.1 µA
EBO
V
35 - - V
CBO
V
30 - - V
CEO
V
5 - - V
EBO
V
CE(sat)
100 160
-
-
200 320
-
-
- - 0.5 V
fT - 120 - MHz
Cob - 13 - pF
Dated : 08/12/2003
Page 2
ST 2SC5344
Fig. 1 Pc - T
800
600
(mW)
c
450
300
Power disspation P
150
0
a
0 25 50 75 100
Ambient temperature Ta(°C)
Fig. 3 Ic - V
1000
800
(mA)
c
600
400
Collector current I
200
CE
Ta=25°C
125
Fig. 2 Ic - V
1000
BE
VCE=1V
100
30
10
5
Collector current Ic (mA)
1.0
150
0.2
0
C
°
0
0
1
=
a
T
0.4 0.6 0.8 1.0
C
°
C
5
°
2
5
-
2
=
=
a
a
T
T
1.61.41.2
Base-Emitter voltage VBE (V)
Fig. 4 V
8 7
6 5
4
3 2
1
(V)
(sat)
CE
voltage V
Collector- Emitter saturation
(sat)
- I
CE
c
2
Ic/IB=10
1
Ta=25°C
Ta=100°C
0.1
T
a
= -25°C
0
0 1
Fig.5 hFE - I
2000
VCE=1V
1000
FE
DC current gain h
100
10
1
2 3 4
Collector- Emitter voltage VCE (V)
c
T
a
=100°C
Ta=25°C
Ta= -25°C
10
Collector current Ic (mA)
100
IB=0mA
5
6
1000
0.01 1
10 100 1000
Collector current Ic (mA)
Dated : 08/12/2003
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