Datasheet 2SC5291 Datasheet (SANYO)

Ordering number : ENN5282A

2SC5291

NPN Epitaxial Planar Silicon Transistor

2SC5291

High-Voltage Switching Applications

Features

• Adoption of FBET, MBIT processes.

• Large current capacity.

• Can be provided in taping.

• 9.5mm onboard mounting height.

Package Dimensions

unit : mm

2084B

[2SC5291]

10.5

1.0

1.2

0.5
123

1.6

8.5

7.5

1.9

1.2

4.5

0.5

2.6

1.4

1 : Emitter
2 : Collector

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

C

2.5 2.5

3 : Base
SANYO : FLP

180 V
160 V

6V

1.5 A

2.5 A

300 mA

1.5 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=120V, IE=0 1.0 µA
VEB=4V, IC=0 1.0 µA

Unit

Continued on next page.

12201 TS IM TA-0376

No.5282-1/4

2SC5291

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Gain-Bandwidth Product f

Output Capacitance Cob VCB=10V, f=1MHz 14 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 0.13 0.45 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA 0.85 1.2 V
Turn-ON Time t
Storage Time t
Fall Time t

* : The 2SC5291 is classified by 100mA hFE as follows :

Rank R S T

h

100 to 200 140 to 280 200 to 400

FE

hFE1VCE=5V, IC=100mA 100 400
hFE2VCE=5V, IC=10mA 90

VCE=10V , IC=50mA 120 MHz

T

on

stg

See specified Test Circuit 4.0 ns
See specified Test Circuit 1.2 µs
See specified Test Circuit 8.0 ns

f

min typ max

Switching Time Test Circuit

I

B1

I

R

V

R

VBE= --5V

B2

B

+

100µF 470µF

INPUT

PW=20µs
D.C.=≤1%

50Ω

10IB1=--10IB2=IC=700mA
RL=140Ω, RB=14Ω at IC=700mA

OUTPUT

R

L

+

VCC=100V

Ratings

Unit

1.8

1.6

1.4

A

--

1.2

C

1.0

0.8

0.6

Collector Current, I

0.4

0.2

0

012345

IC -- V

Collector-to-Emitter Voltage, V

1.6

VCE=5V

A

1.2

--

IC -- V

CE

BE

50mA

40mA

30mA

20mA

10mA

5mA

2mA

1mA

=0

I

B

ITR08045

V Collector-to-Emitter Voltage, V

CE --

C

0.8

0.4

Collector Current, I

Ta=75°C

25°C

--25°C

4.5mA

4.0mA

IC -- V

3.5mA

1.0

0.8

A

-­C

0.6

5.0mA

CE

3.0mA

2.5mA

2.0mA

0.4

Collector Current, I

0.2

1.5mA

1.0mA

0.5mA

=0

I

0

01020304050

CE --

1000

7
5

3

FE

100

DC Current Gain, h

Ta=75°C

2

7
5

3
2

hFE -- I

25°C

--25°C

C

B

ITR08046

V

VCE=5V

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, VBE -- V

ITR08047

10

72

0.01

2

35

72

0.1

Collector Current, I

35 3

7

1.0

C --

A

ITR08048

No.5282-2/4

5

3

2

-- MHz
T

100

7
5

3

2

Gain-Bandwidth Product, f

(For PNP, minus sign is omitted.)

10

0.01

23 357

Collector Current, IC -- A

3
2

1000

7

(sat) -- mV

5

CE

3
2

fT -- I

C

0.1

VCE(sat) -- I

2SC5291

VCE=10V

7

522

1.0

ITR08049

C

IC / IB=10

100

7

5

3

2

10

7

Output Capacitance, Cob -- pF

5

(For PNP, minus sign is omitted.)

3

23 55

1

Collector-to-Base Voltage, V

10

7

5

(sat) -- V

3

BE

2

Cob -- V

7

CB

10

VBE(sat) -- I

f=1MHz

27

3

CB --

V

100

ITR08050

C

IC / IB=10

100

7
5

Collector-to-Emitter

Saturation V oltage, V

3
2

7

0.01

5

ICP=2.5A

3
2

1.0
7

-- A

5

C

3
2

0.1
7
5

3

Collector Current, I

2

Tc=25°C

0.01
7

Single pulse

5

57

°C

Ta=75

23 25323

25

°C

°C

25

--

7

0.1

Collector Current, IC -- A Collector Current, IC -- A

7

5

1.0

ITR08051 ITR08052

Forward Bias A S O

10

10ms

100ms

3

1ms

7

100

2

ITR08053

IC=1.5A

DC operation

2235 5

1.0

7

1.0

7

Base-to-Emitter

Saturation V oltage, V

5

3

7

0.01

1.6

1.5

1.4

1.2

-- W
C

1.0

0.8

0.6

0.4

Ta= --25

23 25323

°C

°C

25

°C

75

7

0.1

P

-- Ta

C

Collector Dissipation, P

0.2

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °CCollector-to-Emitter Voltage, VCE -- V

7

5

1.0

ITR08054

No.5282-3/4

2SC5291

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.

PS

No.5282-4/4