Page 1
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SC5393
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio h
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
600
600
400
7
10
5
1
40
2
150
–55 to +150
FE
Unit
V
V
V
V
A
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
=25˚C)
C
Conditions
VCB = 600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 1.5A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 150V
min
10
8
typ30max
100
100
60
1
2
2.0
0.3
Unit
µA
µA
V
V
MHz
µs
µs
1
Page 2
Po wer Transistors 2SC5393
PC— Ta Area of safe operation (ASO)
50
)
W
(
(1)
40
C
30
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
100
I
CP
10
)
I
A
(
C
C
10ms
1
t=500µs
1ms
1s
20
(2)
10
(3)
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
0.1
Collector current I
0.01
0.001
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
)
2
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