Samsung KM684000ALTI-7L, KM684000ALT-5L, KM684000ALR-5L, KM684000ALP-7L, KM684000ALP-7 Datasheet
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CMOS SRAMK6T1008C2E Family
Revision 3.0
March 2000
1
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No.
0.0
1.0
1.01
2.0
3.0
Remark
Preliminary
Final
Final
Final
History
Design target
Finalize
- Improve tWP form 55ns to 50ns for 70ns product.
- Remove 55ns speed bin from industrial product.
Errata correction
Revise
Revise
- Add 55ns parts to industrial products.
Draft Data
October 12, 1998
August 30, 1999
December 1, 1999
February 14, 2000
March 3, 2000
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
CMOS SRAMK6T1008C2E Family
Revision 3.0
March 2000
2
128Kx8 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The K6T1008C2E families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various package types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
FEATURES
• Process Technology: TFT
• Organization: 128Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP1-0820F/R
PIN DESCRIPTION
Name Function
CS1, CS2 Chip Select Input
OE Output Enable Input
WE Write Enable Input
I/O1~I/O8 Data Inputs/Outputs
A0~A16 Address Inputs
Vcc Power
Vss Ground
N.C. No Connection
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
Product Family Operating Temperature Vcc Range Speed
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
K6T1008C2E-L
Commercial(0~70°C)
4.5~5.5V 551)/70ns
50µA
50mA
32-DIP-600, 32-SOP-525
32-TSOP1-0820F/R
K6T1008C2E-B 10µA
K6T1008C2E-P
Industrial(-40~85°C)
50µA
32-SOP -525
32-TSOP1-0820F/R
K6T1008C2E-F 15µA
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
I/O1
Data
cont
Data
cont
I/O8
CS1
WE
OE
CS2
Control
logic
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-DIP
32-TSOP
32-SOP
Column Address
Raw
Address
A4
A5
A6
A7
A12
A14
A16
NC
VCC
A15
CS2
WE
A13
A8
A9
A11
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
Type1-Reverse
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
32-TSOP
CMOS SRAMK6T1008C2E Family
Revision 3.0
March 2000
3
PRODUCT LIST
Commercial Temperature Products(0~70°C) Industrial Temperature Products(-40~85°C)
Part Name Function Part Name Function
K6T1008C2E-DL55
K6T1008C2E-DL70
K6T1008C2E-DB55
K6T1008C2E-DB70
K6T1008C2E-GL55
K6T1008C2E-GL70
K6T1008C2E-GB55
K6T1008C2E-GB70
K6T1008C2E-TB55
K6T1008C2E-TB70
K6T1008C2E-RB55
K6T1008C2E-RB70
32-DIP, 55ns, Low Power
32-DIP, 70ns, Low Power
32-DIP, 55ns, Low Low Power
32-DIP, 70ns, Low Low Power
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
K6T1008C2E-GP55
K6T1008C2E-GP70
K6T1008C2E-GF55
K6T1008C2E-GF70
K6T1008C2E-TF55
K6T1008C2E-TF70
K6T1008C2E-RF55
K6T1008C2E-RF70
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
FUNCTIONAL DESCRIPTION
1. X means don′t care (Must be in high or low states)
CS1 CS2 OE WE I/O Mode Power
H
X
1)
X
1)
X
1)
High-Z Deselected Standby
X
1)
L
X
1)
X
1)
High-Z Deselected Standby
L H H H High-Z Output Disabled Active
L H L H Dout Read Active
L H
X
1)
L Din Write Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V Power Dissipation PD 1.0 W Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA
0 to 70 °C K6T1008C2E-L/-B
-40 to 85 °C K6T1008C2E-P/-F
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