SAMSUNG K4S280432M Technical data
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K4S280432M CMOS SDRAM
128Mbit SDRAM
8M x 4Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S280432M CMOS SDRAM
8M x 4Bit x 4 Banks Synchronous DRAM
GENERAL DESCRIPTIONFEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4 & 8 page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K Cycle)
FUNCTIONAL BLOCK DIAGRAM
The K4S280432M is 134,217,728 bits synchronous high data
rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,
fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
Part No. Max Freq. Inter- Package
K4S280432M-TC/L80 125MHz(CL=3)
K4S280432M-TC/L1H 100MHz(CL=2)
K4S280432M-TC/L1L 100MHz(CL=3)
K4S280432M-TC/L10 66MHz(CL=2 &3)
LVTTL
54pin
TSOP(II)
CLK
ADD
Data Input Register
Bank Select
Refresh Counter
Row Buffer
Address Register
LRAS
LCBR
LCKE
LRAS LCBR LWE LDQM
CLK CKE CS RAS CAS WE DQM
Row Decoder Col. Buffer
Latency & Burst Length
Programming Register
LCAS LWCBR
Timing Register
8M x 4
8M x 4
8M x 4
8M x 4
Column Decoder
LWE
LDQM
Sense AMP
Output BufferI/O Control
DQi
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S280432M CMOS SDRAM
PIN CONFIGURATION (Top view)
VDD
N.C
VDDQ
N.C
DQ0
VSSQ
N.C
N.C
VDDQ
N.C
DQ1
VSSQ
N.C
VDD
N.C
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
N.C
VSSQ
N.C
DQ3
VDDQ
N.C
N.C
VSSQ
N.C
DQ2
VDDQ
N.C
VSS
N.C/RFU
DQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
VSS
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin Name Input Function
CLK System clock Active on the positive going edge to sample all inputs.
CS Chip select
CKE Clock enable
A0 ~ A11 Address
BA0 ~ BA1 Bank select address
RAS Row address strobe
CAS Column address strobe
WE Write enable
DQM Data input/output mask
DQ0 ~ 3 Data input/output Data inputs/outputs are multiplexed on the same pins.
VDD/VSS Power supply/ground Power and ground for the input buffers and the core logic.
VDDQ/VSSQ Data output power/ground
N.C/RFU
No connection
/reserved for future use
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA9, CA11
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No Connection on the device.
Rev. 0.0 Aug. 1999
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